On fractional difference logistic maps: Dynamic analysis and synchronous control

This paper investigates a logistic map derived from a difference equation in the framework of discrete fractional calculus. Through the Poincaré plots and Julia sets, the map’s chaotic and fractal characteristics are studied comparing with those of a quadratic map to be proposed. The memory effect of fractional difference maps is reflected in these dynamics, and some reasonable explanations are given by combining with quantitative analysis. A coupled controller is designed to realize synchronization between fractional difference logistic map and fractional difference quadratic map.

     

Dynamic model of Malware propagation based on tripartite graph and spread influence

Nonlinear Dynamics - The large-scale use of the Internet brings the problem of the rapid spread of computer malware over the network. Aiming at the relationship between malware, propagation paths...     

Bifurcations and dynamics of a plant disease system under non-smooth control strategy

Nonlinear Dynamics - Mathematical models and analyses can assist in designing the control strategies to prevent the spread of infectious disease. The present paper investigates the bifurcations and...     

螺栓松动边界下纤维增强复合薄板的振动测试方法

提出了基于预埋压力传感器的量化测试方法,研究了螺栓松动边界对纤维增强复合薄板振动特性的影响。首先,自主设计并开发了带有预埋压力传感器的螺栓松动边界下复合薄板的振动测试系统,并详细介绍了系统各个部件的组成和功能;然后,归纳出一套合理、规范的松动边界下复合薄板的振动测试流程,并对HF10碳纤维/树脂复合薄板进行了实际测试。结果表明:随着螺栓松动程度的不断增加,复合薄板的固有频率逐渐降低,模态振型的节线位置也发生了不同程度的变化,但其阻尼结果呈现先增大后减小的趋势;而共振和非共振响应呈现先减小后增大的趋势。     

三维非连续变形分析方法碰撞分析及其应用

将具有完备动力学理论的非连续变形分析(DDA)方法应用于块体碰撞研究。基于三维DDA(3D DDA)方法,按时步输出块体碰撞过程速度变化和接触嵌入量,进而得到块体碰撞恢复系数、冲量、冲击力。以此为参考指标,采用斜抛、面-面对心等碰撞模型,验证3D DDA方法模拟块体碰撞的有效性,并将3D DDA方法应用于多米诺骨牌倾倒、滚石边坡成灾及防护等算例分析,探讨了多米诺骨牌倾倒机制、滚石启动及运动行为、滚石灾害防护方案。结果表明:多米诺骨牌间距越大,同一块体被碰撞时间越迟,其最终稳定时间也越迟,与下一块体碰撞的动能越大;滚石运动呈侧向平动及转动三维运动特征,每一次碰撞,均引起动能、轨迹或状态的显著变化;滚石拦挡设施弹簧刚度越大,越先达到最大冲击力,最大冲击力随弹簧刚度的增加而减小;可结合树木阻挡效应,耗散滚石动能,降低滚石飞跃高度,使滚石灾害减轻或控制在防护范围以内。     

Influence of Electron–Phonon Interaction on the Lattice Thermal Conductivity in Single-Crystal Si

Lattice thermal conductivity can be reduced by introducing point defect, grain boundary, and nanoscale precipitates to scatter phonons of different wave-lengths, etc. Recently, the effect of electron–phonon (EP) interaction on phonon transport has attracted more and more attention, especially in heavily doped semiconductors. Here the effect of EP interaction in n-type P-doped single-crystal Si has been investigated. The lattice thermal conductivity decreases dramatically with increasing P doping. This reduction on lattice thermal conductivity cannot be explained solely considering point defect scattering. Further, the lattice thermal conductivity can be fitted well by introducing EP interaction into the modified Debye–Callaway model, which demonstrates that the EP interaction can play an important role in reducing lattice thermal conductivity of n-type P-doped single-crystal Si.     

Effects of nuclear charge fluctuations on dilepton photoproduction

Fluctuations of dilepton production from two photon interactions γγ→l~+l~- are studied in semicentral and peripheral nuclear collisions.Based on the Weizsacker-Williams approach,electromagnetic(EM) fields generated by moving nuclear charges are approximated as quasi-real photons.As fluctuating EM fields in each collision event are hard to be measured directly in experiments due to its short lifetime,we study the dilepton photoproduction with fluctuating EM fields,which are crucial for the EM fields induced chiral and charged particle evolutions,and calculate the relative standard deviation of the dilepton mass spectrum with the event-by-event fluctuating nuclear charge distributions.This fluctuation effect becomes smaller in more peripheral collisions where the shift of proton positions is implicit for EM fields outside the nucleus.The uncertainty of effective impact parameter △b on the standard deviation is also studied,and its effect is around one-third of the effect of nuclear charge fluctuations when △b is taken as～1 fm.     

Failure analysis with a focus on thermal aspect towards developing safer Na-ion batteries

Safety requirements stimulate Na-based batteries to evolve from high-temperature Na–S batteries to room-temperature Na-ion batteries(NIBs).Even so,NIBs may still cause thermal runaway due to the external unexpected accidents and internal high activity of electrodes or electrolytes,which has not been comprehensively summarized yet.In this review,we summarize the significant advances about the failure mechanisms and related strategies to build safer NIBs from the selection of electrodes,electrolytes and the construction of electrode/electrolyte interfaces.Considering the safety risk,the thermal behaviors are emphasized which will deepen the understanding of thermal stability of different NIBs and accelerate the exploitation of safe NIBs.     

Strong Pauli paramagnetic effect in the upper critical field of KCa2Fe4As4F2

Recently, 12442 system of Fe-based superconductors has attracted considerable attention owing to its unique double-Fe As-layer structure. A steep increase in the in-plane upper critical field with cooling has been observed near the superconducting transition temperature, Tc, in KCa2Fe4As4F2 single crystals. Herein, we report a high-field investigation on upper critical field of this material over a wide temperature range, and both out-of-plane(H∥c, Hc2c) and in-plane(H∥ab, Hc2ab ) directions have been measured.A sublinear temperature-dependent behavior is observed for the out-of-plane Hc2c , whereas strong convex curvature with cooling is observed for the in-plane Hc2ab . Such behaviors could not be described by the conventional Werthamer-Helfand-Hohenberg(WHH) model. The data analysis based on the WHH model by considering the spin aspects reveals a large Maki parameter α=9,indicating that the in-plane upper critical field is affected by a very strong Pauli paramagnetic effect.     

Hyperchaos,quasi-period and coexisting behaviors in second-order-memristor-based jerk circuit

The European Physical Journal Special Topics - This paper generalizes a second-order-memristor-based jerk circuit, which is achieved by substituting the first-order memristor contained diode-bridge...