非自治动力系统的原像熵

本文对紧致度量空间上的连续自映射序列应用生成集和分离集引入了点原像熵、原像分枝熵以及原像关系熵等几类原像熵的定义并进行了研究.主要结果是:(1) 证明了这些熵都是等度拓扑共轭不变量.(2)讨论了这些原像熵之间及它们与拓扑熵之间的关系,得到了联系这些熵的不等式.(3)证明了对正向可扩的连续自映射序列而言, 两类点原像熵相等,原像分枝熵与原像关系熵也相等.(4)证明了对(a).由闭Riemann 流形上的一个扩张映射经充分小的C1-扰动生成的自映射序列,以及(b).有限图上等度连续的自映射序列,有零原像分枝熵.     

Optical wavelet de-noising applied in multi-span nonlinear fiber links

In this work, optical wavelet de-noising with several different types of wavelets such as db4, coif4 and dmey wavelet was applied at the end of the 40 Gbit/s multi-span intensity-modulated fiber communication systems. The results of numerical simulations carried out in different fiber links demonstrated that the optical wavelet de-noising method could remove the random amplitude fluctuation induced by the interaction of EDFA’s ASE noise and optical fiber’s dispersion and nonlinearity. The SNR and BER curves of the optical bit sequence without and with optical wavelet de-noising in dispersion compensation fiber link were plotted to show the effectiveness of the wavelet de-noising in the fiber-optic communication systems and wavelet de-noising with demy wavelet can achieve better result than with other type wavelet.     

有限重数的Dirichlet移位

In this paper, we show that a multiplication operator on the Dirichlet space D is unitarily equivalent to Dirichlet shift of multiplicity n ＋ 1 （n ≥ 0） if and only if its symbol is c zn＋1 for some constant c. The result is very different from the cases of both the Bergman space and the Hardy space.     

Nanoindentation analysis of the pop-in events on SiGe single layer

The growth of metastable silicon germanium (Si_0.8Ge_0.2) thin film on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition has been subjected to residual indentation studies. A nanoindentation system has been applied to analyze SiGe film after different annealing treatments. A number of phenomena have been found for the heteroepitaxial growth of SiGe film at the critical thickness of 350 nm, including single discontinuity (the so-called “pop-in” event) as well as the elastic/plastic contact translation. Atomic force microscopy is employed to investigate the surface impression. Pop-in events in the load-indentation depth curves of 400 and 500 °C and no nano-cracks in the vicinity regions are found. The values of H ranging from 13.13±0.9, 21.66±1.3, 18.52±1.1, 14.47±0.7 GPa and the values of E ranging from 221.8±5.3, 230.7±6.4, 223.5±4.6, 156.7±3.8 GPa, are obtained. The elastic/plastic contact translation of the SiGe film occurs at different annealing conditions, with h_f/h_max values in the range of 0.501, 0.392, 0.424, and 0.535 for samples are treated at RT, 400, 500, and 600 °C, respectively. The mechanism responsible for the pop-in event in such crystal structure is due to the interaction of the indenter tip with the pre-existing threading dislocations, since the release of the indentation load is bound to be reflected in the directly compressed volume.     

更正:质子束治疗中非均匀组织的等效水厚度修正研究[物理学报2013,62,068701]

《物理学报》2013年第62卷第6期第068701页《质子束治疗中非均匀组织的等效水厚度修正研究》一文中,因作者疏忽导致几处错误,特此更正,并诚挚地向读者致歉.期刊网上此文的电子版已做相应的更正.将3.1节中三个公式做如下更正:将(1)式:"WET=R介质/R水×b"改成:"WET=R水/R介质×b"将(2)式:"WET=R1/R水×d1+R2/R水×d2+···+Rn/R水×dn"改成:"WET=R水/R1×d1+R水/R2×d2+···+R水/Rn×dn"     

粉末晶体(ZrO2)x(Bi2O3)1-x(x=1.0, 0.97) 晶体结构分析

为了确定ZrO2和(ZrO2)0.97(Bi2O3)0.03的晶体结构和原子热振动各向同性温度因子B,对该粉末晶体进行X射线衍射实验,建立了晶体结构模型,进行晶体结构分析。首先,采用共沉淀法和高温固相烧结法制备了纳米氧化锆ZrO2和(ZrO2)0.97(Bi2O3)0.03粉末晶体,接着,使用X射线测试仪对两种样品进行了衍射实验（XRD）,利用Rietveld 精修方法的 RIETAN-2000程序对所得实验结果进行了晶体结构分析,获得了晶体结构参量和原子热振动各向同性温度因子B。通过Maximum Entropy Method（MEM）解析得到了粉末晶体(ZrO2)x(Bi2O3)1-x(x=1.0,0.97)的等高电子密度分布可视化图谱。结果表明,(ZrO2)0.97(Bi2O3)0.03的晶胞体积比ZrO2的晶胞体积大分别为140.6850 Å3和140.5637Å3;ZrO2晶体的原子热振动各向同性温度因子B(Zr)、BO(1)、BO(2)和 B（Bi）分别为0.690、0.269、 0.178 和 0 Å2,(ZrO2)0.97(Bi2O3)0.03晶体的分别为0.460 、0.583 、0.121 和0.581 Å2。 确定了(ZrO2)0.97(Bi2O3)0.03的晶体结构属于单斜晶系,实现了等高电子密度分布三维（3D）和二维（2D）的可视化,进一步确定了晶体结构和原子位置。     

Semi-varying coefficient models with a diverging number of components

Semiparametric models with both nonparametric and parametric components have become increasingly useful in many scientific fields, due to their appropriate representation of the trade-off between flexibility and efficiency of statistical models. In this paper we focus on semi-varying coefficient models (a.k.a. varying coefficient partially linear models) in a “large n, diverging p” situation, when both the number of parametric and nonparametric components diverges at appropriate rates, and we only consider the case p=o(n). Consistency of the estimator based on B-splines and asymptotic normality of the linear components are established under suitable assumptions. Interestingly (although not surprisingly) our analysis shows that the number of parametric components can diverge at a faster rate than the number of nonparametric components and the divergence rates of the number of the nonparametric components constrain the allowable divergence rates of the parametric components, which is a new phenomenon not established in the existing literature as far as we know. Finally, the finite sample behavior of the estimator is evaluated by some Monte Carlo studies.     

BL代数的fantastic滤子和normal滤子

滤子是研究逻辑代数的有效工具.本文研究了BL代数的fantastic和normal滤子的等价条件,得到了在MV-代数中两种滤子之间的等价性,给出了两个公开问题:"在什么样的合适条件下,一个normal滤子成为一个fantastic滤子?"和"在什么合适的条件下,normal滤子的拓展性成立?"结论成立的一种条件.     

直流磁控溅射厚度对Cu(Inx,Ga1-x)Se2背接触Mo薄膜性能的影响

采用直流磁控溅射工艺, 在一定条件下通过控制溅射时间, 在钠钙玻璃上制备了不同厚度的用于Cu(In_x, Ga_1-x)Se₂薄膜太阳电池背接触材料的Mo薄膜, 并利用X射线衍射 (XRD)、场发射扫描电子显微镜 (SEM)、四探针测试仪、台阶仪研究了厚度对溅射时间、薄膜微结构、电学性能及力学性能的交互影响. Mo薄膜的厚度与溅射时间呈线性递增关系; 随厚度的增大, Mo薄膜 (110) 和 (211) 面峰强均逐渐增大, 择优生长从(110)方向逐渐向 (211)方向转变, 方块电阻值只随 (110) 方向上的生长而急剧减小直到一特定值约2 Ω/⇑, 电导率随薄膜的 (110) 择优取向程度的降低而线性减小直到一特定值约0.96×10^-4 Ω·cm; Mo薄膜内部是一种多孔的长形簇状颗粒和颗粒间隙交织的结构, 并处于拉应力态, 其内部应变随薄膜厚度的增大而减小. 关键词： Mo薄膜 CIGS背接触 厚度 微结构     

氟化氙(C-A蓝绿激光技术研究进展

 综述了XeF(C-A)激光的产生原理，表面放电光泵浦源的结构，激光器装置， XeF(C-A)激光实验研究以及XeF(C-A)激光理论模拟；介绍了XeF₂浓度的监测，以及表面放电光泵浦源技术研究的最新进展。