Zn1-xCdxSe-ZnSe多量子阱的光学双稳态

用常压MOCVD法在GaAs衬底上生长了Zn_1-xCd_xSe-ZnSe多层结构.通过X-射线衍射谱和光致发光等方法判断,表明该材料为多量子阱结构.从室温下的透射光谱上可以观察到这种多量子阱中的n=1的激子吸收峰,并观测到起因子激子的ns量级的光学双稳态.     

绝缘表面和气体导电与湿度的关系

湿度对绝缘体表面电导和气体电导有一定的影响，但通常在湿度传感器的研究中忽略了气体电导的贡献。本文通过特殊设计装置来区分表面电导和气体电导，并分别从实验和理论上进行了定性的研究。     

一类具有媒体效应和追踪隔离的SIQR时滞传染病模型

建立了一类具有媒体效应和追踪隔离的SIQR时滞传染病模型,给出了模型的基本再生数R_{\mathrm{0}},并从稳定性、持久性和分支角度对该模型进行了理论分析和数值模拟。研究结果表明,由媒体报道产生的时滞\tau在各影响因子的临界值处出现Hopf分支。当\tau固定时,随着媒体的广泛报道,易感者对疾病信息认识的偏差程度\delta不断增加,模型由周期性振荡转为平衡;随着有效接触率最大削减作用{\beta }_{\mathrm{0}}和{\beta }_{\mathrm{00}}的不断增加,模型又由平衡状态转为周期性振荡。还研究了\delta,{\beta }_{\mathrm{0}},{\beta }_{\mathrm{00}}以及被追踪隔离者相关信息的媒体报道准确率\sigma对传染病发展的影响。结果表明,媒体对传染病信息的广泛报道以及提高报道信息的准确率可降低疾病传播,有利于控制传染病。     

High pulse energy mode-locked multicore photonic crystal fiber laser

A high pulse energy passively mode-locked fiber laser operating in the all-normal dispersion regime is demonstrated. The gain material is an Yb-doped multicore photonic crystal fiber with 18 cores in array-type geometry. Robust and self-starting mode locking is achieved using a fast semiconductor saturable absorber mirror. The laser generates 180?nJ chirped pulses at a 14.48?MHz repetition rate for an average power of 2.6?W. The 1.15?ps output pulses are compressed to 690?fs outside the cavity.     

The circular and elliptic white-light dark spatial solitons in a photovoltaic self-defocusing nonlinear medium

We observed circular white-light dark spatial solitons in photovoltaic self-defocusing LiNbO₃:Fe crystal using an ordinary incandescent lamp as light source (a line source) with the filament of the bulb parallel to the crystalline c axis. Besides the above condition, the formation of the elliptic soliton needs an additive condition that the crystalline c axis is parallel to the minor axis of dark elliptic spot.     

Three-dimensional GaN-Ga2O3 core shell structure revealed by x-ray diffraction microscopy

In combination of direct phase retrieval of coherent x-ray diffraction patterns with a novel tomographic reconstruction algorithm, we, for the first time, carried out quantitative 3D imaging of a heat-treated GaN particle with each voxel corresponding to 17 x 17 x 17 nm3. We observed the platelet structure of GaN and the formation of small islands on the surface of the platelets, and successfully captured the internal GaN-Ga2O3 core shell structure in three dimensions. This work opens the door for nondestructive and quantitative imaging of 3D morphology and 3D internal structure of a wide range of materials at the nanometer scale resolution that are amorphous or possess only short-range atomic organization.     

A voltage-controlled chaotic oscillator based on carbon nanotube field-effect transistor for low-power embedded systems

This paper presents a compact and low-power-based discrete-time chaotic oscillator based on a carbon nanotube field-effect transistor implemented using Wong and Deng＇s well-known model. The chaotic circuit is composed of a nonlinear circuit that creates an adjustable chaos map, two sample and hold cells for capture and delay functions, and a voltage shifter that works as a buffer and adjusts the output voltage for feedback. The operation of the chaotic circuit is verified with the SPICE software package, which uses a supply voltage of 0.9 V at a frequency of 20 kHz. The time series, frequency spectra, transitions in phase space, sensitivity with the initial condition diagrams, and bifurcation phenomena are presented. The main advantage of this circuit is that its chaotic signal can be generated while dissipating approximately 7.8 μW of power, making it suitable for embedded systems where many chaos-signal generators are required on a single chip.     

Large coercivity and unconventional exchange coupling in manganese-oxide-coated manganese gallium nanoparticles

The microstructures and magnetic properties of nanoparticles, each composed of an antiferromagnetic （AFM） manganese-oxide shell and a ferromagnetic-like core of manganese-gallium （MnGa） compounds, are studied. The coreshell structure is confirmed by transmission electron microscope （TEM）. The ferromagnetic-like core contains three kinds of MnGa binary compounds, i.e., ferrimagnetic （FI） DO22-type MnaGa, ferromagnetic （FM） Mn8Gas, and AFM DO19-type Mn3Ga, of which the first two correspond respectively to a hard magnetic phase and to a soft one. Decoupling effect between these two phases is found at low temperature, which weakens gradually with increasing temperature and disappears above 200 K. The exchange bias （EB） effect is observed simultaneously, which is caused by the exchange coupling between the AFM shell and FM-like core. A large coercivity of 6.96 kOe （1Oe = 79.5775 A·m^-1） and a maximum EB value of 0.45 kOe are achieved at 300 K and 200 K respectively.     

Effects of shaded facets on the performance of metal-coated etched diffraction grating demultiplexer

A finite-difference time-domain (FDTD) method combined with a periodic boundary condition is used to analyze the diffraction efficiency of an etched diffraction grating (EDG) demultiplexer coated with a metallic film at the backside. The numerical results show that the diffraction loss is mainly due to the scattering effect of shaded facets of a metal-coated grating at both the polarizations. However, the same shaded facets can produce a higher loss for a TM polarization than that for a TE polarization, which induces a higher polarization dependent loss (PDL) of the demultiplexer.     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.