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111.
The multicaloric effect refers to the thermal response of a solid material driven by simultaneous or sequential application of more than one type of external field.For practical applications,the multicaloric effect is a potentially interesting strategy to improve the efficiency of refrigeration devices.Here,the state of the art in multi-field driven multicaloric effect is reviewed.The phenomenology and fundamental thermodynamics of the multicaloric effect are well established.A number of theoretical and experimental research approaches are covered.At present,the theoretical understanding of the multicaloric effect is thorough.However,due to the limitation of the current experimental technology,the experimental approach is still in progress.All these researches indicated that the thermal response and effective reversibility of multiferroic materials can be improved through multicaloric cycles to overcome the inherent limitations of the physical mechanisms behind single-field-induced caloric effects.Finally,the viewpoint of further developments is presented.  相似文献   
112.
采用一种绿色的等离子增强化学气相沉积法,以Al2O3为衬底, Ga金属为镓源, N2为氮源,在不采用催化剂的情况下,成功制备获得了结晶质量良好的GaN纳米线.研究表明,生长温度可显著调控GaN纳米线的形貌,当反应温度为950℃时,生长出的GaN微米片为六边形;当反应温度为1000℃时,生长出了长度为10-20μm的超长GaN纳米线.随着反应时间增加, GaN纳米线的长度增加. GaN纳米线内部存在着压应力,应力大小为0.84 GPa.同时,也进一步讨论了GaN纳米线无催化剂生长机制. GaN纳米线光致发光结果显示, GaN纳米线缺陷较少,结晶质量良好,在360 nm处有一个较为尖锐的本征发光峰,可应用于紫外激光器等光电子器件.本研究结果将为新型光电器件低成本绿色制备提供一个可行的技术方案.  相似文献   
113.
We construct a new global optical model potential to describe the elastic scattering of 12C. The experimental data of elastic-scattering angular distributions and total reaction cross sections for targets from 24Mg to 209Bi are considered below 200 MeV within the framework of the optical model. The results calculated using the derived global optical potential are then compared with the existing experimental data. The reliability of the global optical potential is further tested by predicting the elastic scattering data out of the mass and energy ranges, within which the global potential parameters are determined, and reasonable results are also obtained.  相似文献   
114.
Using an operator ordering method for some commutative superposition operators, we introduce two new multi-variable special polynomials and their generating functions, and present some new operator identities and integral formulas involving the two special polynomials. Instead of calculating complicated partial differential, we use the special polynomials and their generating functions to concisely address the normalization, photocount distributions and Wigner distributions of several quantum states that can be realized physically, the results of which provide real convenience for further investigating the properties and applications of these states.  相似文献   
115.
The two-dimensional (2D) C3N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C3N via stacking or forming nanoribbon, bandgap modulation of bilayer C3N nanoribbons (C3NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C3N by cutting it into hydrogen passivated C3NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C3NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C3NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C3NNRs are larger than that of C3N nanosheet. More interestingly, AC-C3NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C3NNR, the bandgaps of bilayer C3NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C3N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices.  相似文献   
116.
We propose to realize the ground state cooling of magnomechanical resonator in a parity–time (PT)-symmetric cavity magnomechanical system composed of a loss ferromagnetic sphere and a gain microwave cavity. In the scheme, the magnomechanical resonator can be cooled close to its ground state via the magnomechanical interaction, and it is found that the cooling effect in PT-symmetric system is much higher than that in non-PT-symmetric system. Resorting to the magnetic force noise spectrum, we investigate the final mean phonon number with experimentally feasible parameters and find surprisingly that the ground state cooling of magnomechanical resonator can be directly achieved at room temperature. Furthermore, we also illustrate that the ground state cooling can be flexibly controlled via the external magnetic field.  相似文献   
117.
光催化降解有机污染物由于其具有低能耗和绿色环保的特点,已经成为研究的热点. 氧化铋纳米晶体的带隙在2.0∽2.8 eV之间,利用它催化可见光降解有机污染物具有较高的活性,从而引起了越来越多的关注. 尽管近年来已经开发了几种制备Bi2O3基半导体材料的方法,但是仍然难以用简单的方法大规模地制备高活性的Bi2O3催化剂. 因此,开发简单可行的大规模制备Bi2O3纳米晶体的方法对于工业废水处理的潜在应用具有重要意义. 本文通过蚀刻商用BiSn粉末,然后进行热处理,成功地大规模制备了多孔Bi2O3. 获得的多孔Bi2O3在亚甲基蓝(MB)的光催化降解中表现出优异的活性和稳定性. 对该机理的进一步研究表明,多孔Bi2O3合适的能带结构允许生成活性氧物种,例如O2和·OH,可有效降解MB.  相似文献   
118.
119.
本文研究表明通过膜厚控制和表面等离激元增强方法可有效区分隐藏界面和空气表面的和频振动光谱信号. 以氟化钙基底支撑的PMMA薄膜为模型,观察到隐藏界面和空气表面对和频信号贡献的变化. 通过监控羰基和甲基伸缩振动基团,发现薄PMMA膜的和频信号来自PMMA/空气表面的化学基团-CH2、-CH3、-OCH3和C=O,而厚PMMA膜的和频信号则来自基底/PMMA埋层界面的-OCH3和C=O基团. 随制膜浓度增大,埋层界面C=O基团的取向角从65°下降到43°,且浓度大于或等于0.5 wt%时,取向角等于45°±2°. 相比之下,空气表面C=O的取向角落在21°∽38°之间. 在金纳米棒存在条件下,表面等离激元可以极大地增强和频信号,尤其是来自埋层界面信号.  相似文献   
120.
本文制备了一种基于PdSe2/GaAs异质结的高灵敏近红外光电探测器,该探测器是通过将多层PdSe2薄膜转移到平面GaAs上制成的. 所制备的PdSe2/GaAs异质结器件在808 nm光照下表现出明显的光伏特性,这表明近红外光电探测器可以用作自驱动器件. 进一步的器件分析表明,这种杂化异质结在零偏电压和808 nm光照下具有1.16×105的高开关比. 光电探测器的响应度和比探测度分别约为171.34 mA/W和2.36×1011 Jones. 而且,该器件显示出优异的稳定性和可靠的重复性. 在空气中2个月后,近红外光电探测器的光电特性几乎没有下降,这归因于PdSe2的良好稳定性. 最后,基于PdSe2/GaAs的异质结器件还可以用作近红外光传感器.  相似文献   
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