Vertical assembly of carbon nanotubes for via interconnects

The via interconnects are key components in ultra-large scale integrated circuits(ULSI).This paper deals with a new method to create single-walled carbon nanotubes(SWNTs) via interconnects using alternating dielectrophoresis(DEP).Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition.The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%.We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes.     

Hierarchical nanowires for high-performance electrochemical energy storage

Nanowires are promising candidates for energy storage devices such as lithium-ion batteries, su- per（：apa.citors and lithium-air batteries. However, simple-structured nanowires have some limitations hence the strategies to make improvements need to be explored and investigated. Hierarchical nanowires with enhanced periormanee have been considered as an ideal candidate for energy storage due to the novel structures and/or synergistic properties. This review describes some of the recent progresses in the hierarchical nanowire merits, classification, synthesis and performance in energy storage applieat, ions. Herein we discuss the hierarchical nanowires based on their structural design from three major categories, including exterior design, interior design and aligned nanowire assembly. This review also briefly outlines the prospects of hierarchical nanowires in morphology control, property enhancement and application versatility.     

熔石英后表面坑点型划痕对光场调制的近场模拟

建立了坑点型划痕的旋转抛物面模型, 用三维时域有限差分方法研究了熔石英后表面坑点型划痕随深度、 宽度、 间距以及酸蚀量变化对波长λ =355 nm入射激光的调制.研究表明, 这类划痕调制最强区位于相邻两坑点的连接区, 且越靠近表面调制越强.当其宽深比为2.0---3.5、 坑点间距约为坑点宽度的1/2时, 可获得最大光场调制, 最大光强增强因子(LIEF)为11.53; 当坑点间距大于坑点宽度时, 其调制大为减弱, 相当于单坑的场调制.对宽为60δ (δ =λ/12), 深和间距均为30δ的坑点型划痕进行刻蚀模拟, 刻蚀过程中最大LIEF为11.0, 当间距小于300 nm时, 相邻坑点由于衍射形成场贯通.     

Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica

Two methods：high-power,short-time,single-shot irradiation（Method A） and low-power,long-time,multi-shot irradiation（Method B） are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds（LIDTs） of the mitigated sites are tested with a 355-nm,6.4-ns Nd：YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd：YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results.     

IPDA激光雷达数据反演快速精确优化算法

研究了积分路径差分吸收(IPDA)激光雷达中采用洛伦兹线型代替伏格特线型对机载平台探测CO₂柱浓度精度的影响。建立仿真模型,讨论两种线型在数据反演中对温度和气压的敏感性,以及探测相对误差变化随飞行高度的变化。结果表明：伏格特和洛伦兹线型得到的吸收截面,温度和气压敏感性,相对随机误差分别为0.860%,-0.703%和0.224%,基本没有差别,但是洛伦兹线型可以有效地提高光谱参数计算效率。机载IPDA激光雷达采用洛伦兹线型可以快速高精度反演飞行路径上CO₂柱浓度,降低了对系统计算能力的要求,有助于实现在飞期间数据实时反演和分析,以及实施针对突发事件的飞行规划,同时也有助于进一步实现机载激光雷达系统的小型化和集成化。     

空间太阳电池槽式聚光热电联供系统特性分析

建立了空间太阳电池的热电联供系统在槽式聚光条件下的热电性能模型, 并与实验进行了对比.理论计算与实验结果吻合较好, 最大误差在5.1%以内, 证明了该数学模型的正确性.通过此数学模型, 从聚光镜面的光学效率与焦线宽度、导热胶的导热系数、金属平板光照面的吸收率等内部特性参数及风速、太阳直辐射等外部特性参数出发, 对所设计制造的空间太阳电池槽式聚光热电联供系统进行分析.较为全面而系统地分析了这些参数的改变对其系统的热电效率、总效率及火用效率等性能指标的影响, 其中聚光镜面的光学效率影响最大, 光学效率从0.5增加至0.95, 系统的总效率和火用效率分别增加0.9倍和0.5倍, 其余参数对性能也有较强影响.研究结果为新一轮系统装置的制作提供了优化设计基础.     

理论研究B2分子X3Σg-和A3Πu态的光谱性质

采用Davidson修正的内收缩多参考组态相互作用方法及Dunning等的相关一致基aug-cc-pV6Z计算了B₂分子X³∑_g^-和A³Π_u电子态的势能曲线.利用总能量外推公式,将两个电子态的总能量分别外推至完全基组极限.对势能曲线进行核价相关修正及相对论修正计算,得到了同时考虑两种效应修正的外推势能曲线.通过同位素质量识别,得到了主要的同位素分子¹¹B¹¹B和¹⁰B¹¹B的X³Σ_g^-和A³Ⅱ_u电子态的光谱常数T_e,R_e,ω_e,ω_ex_e,ω_ey_e,B_e,β_e和γ_e.求解双原子分子核运动的径向Schr（o|¨）dinger方程,找到了无转动的同位素分子¹¹B₂（X³Σ_g^-,A³Π_u）和¹⁰B¹¹B（X³∑_g^-,A³Π_u）的全部振动态.针对每一同位素分子的每一振动态,分别计算了其振动能级和惯性转动常数等分子常数,它们均与已有的实验结果较为一致.其中,¹⁰B¹¹B（A^Π_u）分子的光谱常数和分子常数属首次报道.     

72Ge40的低激发态能级研究

用低本底反康谱仪(HpGe–NaI)和HpGe–HpGe的三参数符合γ–γ–T系统,对72Ga的衰变γ单谱、符合谱进行了研究,实验共获得2.3×10⁷个符合事件.根据实验结果建立了含有26个能级、87条γ射线的72Ga的衰变能级纲图,其中包含首次测到7条γ射线225.92、826.97、1349.71、1475.32、1667.91、2105.28、2247.39keV和4个能级3248.01、3396.27、3806.10、3864.56keVS并为2939.83keV能级和112.59、937.97、2402.25、2939.95keV4条γ射线的存在提供了证据;实验没有发现113.5、1155.7、1192.4keVγ射线和能级3307.1keV存在的证据。并把317.72keVγ射线的跃迁,由原来的能级3757.26keV跃迁到3439.51keV能级,改为3565.85keV到3248.01keV能级跃迁.     

铬、钕双掺钆镓石榴石(Cr4+,Nd3+):Gd3 Ga5 O12激光晶体光学性能的研究

用提拉法生长了掺铬、钕的钆镓石榴石(Cr^4 ,Nd^3 ：GGG)自调Q激光品体。报道了室温下的吸收光谱和荧光光谱特性。分析了Cr离子浓度对光谱性质的影响。比较了Cr^4 ：GGG,Nd^3 ：GGG和(Cr^4 ,Nd^3 )：GGG晶体吸收光谱的关系。测量了(Cr^4 ,Nd^3 )：GGG晶体和Nd^3 ：GGG晶体的荧光寿命,它们分别是33μs和250μs。实验表明,(Cr^4 ,Nd^3 )：GGG晶体是一种非常有潜力的自调Q激光晶体,可以实现大功率激光器的小型化和全固态化。     

弯曲波导之间的耦合分析

采用极坐标下的光束传播法分析了两条平行变曲波导的中心间距、曲率半径等因素对模式耦合的影响,得到了耦合长度、耦合强度随中心间距、曲率半径的变化规律,并将直波导作为变曲波导的一种特殊情况进行了分析.