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101.
102.
103.
Electron spin resonance spectra of Mn2+ in diluted solid solutions of MnO2 in Y2O3 have been studied at room temperature for Mn concentrations between 0.20 and 2.00 mol%. Isolated Mn2+ ions in sites with two different symmetries were observed, as well as Mn2+ ions coupled by the exchange interaction. The relative concentration of isolated to coupled Mn2+ ions decreases with increasing manganese concentration. The results are consistent with the assumption that the manganese ions occupy preferentially the C2 symmetry sites. A theoretical calculation based on this model yields an effective range of the exchange interaction between Mn2+ ions of 0.53 nm, of the same order as that of Mn2+ ions in CaO. 相似文献
104.
de Souza P. A. Garg V. K. Klingelhöfer G. Gellert R. Gütlich P. 《Hyperfine Interactions》2002,139(1-4):705-714
A portable Mössbauer spectrometer, developed for extraterrestrial applications, opens up new industrial applications of MBS. But for industrial applications, an available tool for fast data analysis is also required, and it should be easy to handle. The analysis of Mössbauer spectra and their parameters is a barrier for the popularity of this wide-applicable spectroscopic technique in industry. Based on experience, the analysis of a Mössbauer spectrum is time-consuming and requires the dedication of a specialist. However, the analysis of Mössbauer spectra, from the fitting to the identification of the sample phases, can be faster using by genetic algorithms, fuzzy logic and artificial neural networks. Industrial applications are very specific ones and the data analysis can be performed using these algorithms. In combination with an automatic analysis, the Mössbauer spectrometer can be used as a probe instrument which covers the main industrial needs for an on-line monitoring of its products, processes and case studies. Some of these real industrial applications will be discussed. 相似文献
105.
J. Kudrna I. Pelant J. Štěpánek F. Trojánek P. Malý 《Applied Physics A: Materials Science & Processing》2002,74(2):253-256
We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by
a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation
in picosecond pump and probe measurements. One type of the observed dynamics has been found to be independent of the sample
preparation, while the other reflects the relative weights of crystalline and amorphous fractions. We propose a simple rate-equation
model that describes the carrier dynamics in microcrystalline silicon in terms of the composition of those in Si microcrystallites
and in the a-Si:H tissue which surrounds the microcrystallites. The model without any fitting parameters reproduces the experimental
data very well when the dynamics are scaled with relative volume fractions as obtained from Raman spectra.
Received: 23 November 2000 / Accepted: 17 March 2001 / Published online: 23 May 2001 相似文献
106.
T. Temesvári C. De Dominicis I.R. Pimentel 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,25(3):361-372
Symmetry considerations and a direct, Hubbard-Stratonovich type, derivation are used to construct a replica field-theory relevant
to the study of the spin glass transition of short range models in a magnetic field. A mean-field treatment reveals that two
different types of transitions exist, whenever the replica number n is kept larger than zero. The Sherrington-Kirkpatrick critical point in zero magnetic field between the paramagnet and replica
magnet (a replica symmetric phase with a nonzero spin glass order parameter) separates from the de Almeida-Thouless line,
along which replica symmetry breaking occurs. We argue that for studying the de Almeida-Thouless transition around the upper
critical dimension d = 6, it is necessary to use the generic cubic model with all the three bare masses and eight cubic couplings. The critical
role n may play is also emphasized. To make perturbative calculations feasible, a new representation of the cubic interaction is
introduced. To illustrate the method, we compute the masses in one-loop order. Some technical details and a list of vertex
rules are presented to help future renormalisation-group calculations.
Received 9 October 2001 相似文献
107.
Lubomír Kubáček 《Applications of Mathematics》2006,51(6):565-582
Some remarks to problems of point and interval estimation, testing and problems of outliers are presented in the case of multivariate
regression model.
This work was supported by the Council of Czech Government J14/98:153100011. 相似文献
108.
109.
Possible Loss and Recovery of Gibbsianness¶During the Stochastic Evolution of Gibbs Measures 总被引:1,自引:1,他引:0
A.C.D. van Enter R. Fernández F. den Hollander F. Redig 《Communications in Mathematical Physics》2002,226(1):101-130
We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a
reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study
the Gibbsian character of the measure νS(t) at time t and show the following:
(1) For all ν and μ, νS(t) is Gibbs for small t.
(2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0.
(3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t.
(4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t.
The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios.
Received: 26 April 2001 / Accepted: 10 October 2001 相似文献
110.
A simple simulation scheme that simultaneously describes the growth kinetics of SiO2 films at the nanometer scale and the SiOx/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law. 相似文献