High-resolution X-ray projection radiography of a pin cathode in a high-current vacuum diode using X-pinch radiation

To study processes in a high-current vacuum diode with a cathode in the form of a single pin made of a metallic wire 20–30 μm in diameter, the method of high-resolution projection X-ray radiography with an X-pinch as a source has been used. A strong inhomogeneity of the energy contribution to the wire has been revealed. The smallest energy release has been observed near the end of the pin, where the electric field strength is maximal. Hard X rays, as well as the ejection of matter from the anode, have been observed, indicating the generation of an electron beam with the parameters characteristic of explosive electron emission in the diode with this configuration. The data obtained indicate complex processes occurring in the diode. Possible scenarios of their development have been considered.     

Sol-gel synthesis of hybrid silicon dioxide-poly(ethylene imine) organoinorganic nanocomposite passing into a mesoporous state upon thermal treatment

Silicon dioxide-based mesoporous materials have been synthesized by the sol-gel method in alcohol solutions of octylamine, dodecylamine, and poly(ethylene imine). It has been established that, in contrast to the traditional method of mesoporous silica preparation using surface-active amines, in which mesophases are developed at the stage of the sol-gel synthesis, in the presence of poly(ethylene imine) in the liquid phase, X-ray amorphous organoinorganic composites are formed that further form mesoporous structures upon a thermal treatment.     

Study of carbon dioxide adsorption on chromium oxide and gallium oxide catalysts on the basis of linear relaxation times

Results of nonstationary experiments on linear relaxation times were used to determine the rates of carbon dioxide adsorption and desorption on chromium oxide and gallium oxide catalysts by various mechanisms. The rate constants were used to calculate nonstationary concentrations of carbon dioxide on the assumption of linear, dissociative, and bimolecular adsorption–desorption mechanisms. A comparison of the calculated and experimental concentrations of carbon dioxide led to a conclusion that the process of its adsorption most probably occurs by the dissociative mechanism.     

多光子过程中相位退相干时两原子布局数反转

利用全量子理论的方法,研究了存在相位退相干时多光子T-C模型中两个二能级原子与二项式光场相互作用系统中两原子的布居数反转。讨论了相位退相干系数、二项式光场系数、最大光子数、跃迁光子数对原子布居数反转的影响。结果表明：相位退相干减少了原子布居数反转的振幅、破坏了原子的量子特性。改变跃迁光子数,可以改变原子间布居数反转演化周期及演化强度。当二项式光场的最大光子数增大时,原子布居差的崩塌-回复现象就会逐渐消失。相位退相干因子不变时, 二项式光场从相干态过渡到数态过程中,原子布居的振荡频率由大变小,周期性的崩塌与回复现象逐渐消失。     

Liquid-phase synthesis of barium acetatotitanyl and barium oxalatotitanyl as intermediates for preparing nanosized barium titanate

Liquid-phase methods (an oxalate process in aqueous solution and a semialkoxide sol-gel process in anhydrous acetic acid) were used to prepare barium acetatotitanyl (BAT) and barium oxalatotitanyl (BOT), which are potential fillers for electrorheological liquids, and to prepare barium titanate during heat treatment of the aforementioned intermediates at 1200°C. The materials were characterized using electron microscopy, FTIR spectroscopy, and thermal analysis. The particle size was 80 to 100 nm for BAT powders and 20 to 50 nm for BOT powders. X-ray spectra of the powders dried at 120°C contain reflections from a barium titanate phase. The dielectric spectra of the materials synthesized were studied for suspensions in PMS-20 silicone oil over the frequency range from 25 to 10⁶ Hz up to 4 kV/mm. The dielectric parameters of BOT suspensions decrease hyperbolically with rising alternate current frequency, whereas BAT suspensions give rise to a relaxation dielectric spectrum with relaxation times on the order of 10⁻³ s.     

The First Principles Investigations of the Thermoelectric Properties of GaN with p- and n-Type Doping

We investigate the thermoelectric properties of GaN with p-and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors (S2σof p-type GaN (-3500 W/mK2) is about twice that of the n-type (-1750 W/mK2), which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit (ZT) estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.     

Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

The influence of the implantation of silicon single crystals by fluorine, nitrogen, oxygen, and neon ions on the distribution of strain and the static Debye-Waller factor in the crystal lattice over the implanted-layer depth has been investigated by high-resolution X-ray diffraction. The density depth distribution in the surface layer of native oxide has been measured by X-ray reflectometry. Room-temperature implantation conditions have ensured the equality of the suggested ranges of ions of different masses and the energies transferred by them to the target. It is convincingly shown that the change in the structural parameters of the radiation-damaged silicon layer and the native oxide layer depend on the chemical activity of the implanted ions.     

Onset of chaotic motion in a gyroscopic system

We study forced vibrations of a gimbal gyro occurring if the inner ring is subjected to a perturbing torque that is the sum of the viscous friction torque and a periodic small-amplitude torque. In the absence of the perturbing torque, there exist two steady-state motions of the gimbal gyro, in which the gimbal rings are either orthogonal or coincide. These motions are respectively stable and unstable. We obtain an equation for the unperturbed system, whose separatrix passes through hyperbolic points. The distance between these points (the Melnikov distance) is calculated to find a condition for the intersection of the separatrices of the perturbed system. We find a domain in the parameter space where the distance changes sign, which indicates the onset of chaotic motion.