Energy spectra and temperature distributions of clusters produced during ion-beam sputtering of metals

A method for evaluating the energy spectra and temperature dependences of the yield of neutral and charged clusters that consist of N≥5 atoms and are produced by ion bombardment of metals is proposed. The results are presented in the form of simple formulas. Theoretical energy spectra of clusters emitted as a result of bombarding niobium, tantalum, and iron targets by atomic ions of gold or xenon and temperature dependences of the yield of silver clusters produced by bombarding the targets with xenon ions are compared with experimental data.

     

Ultrashort electron beam and volume high-current discharge in air under the atmospheric pressure

Conditions are studied under which an electron beam and a volume discharge with a subnanosecond rise time of a voltage pulse are produced in air under atmospheric pressure. It is shown that the electron beam appears in a gas-filled diode at the front of the voltage pulse in ∼0.5 ns, has a half-intensity duration of ≤0.4 ns and an average electron energy of ∼0.6 of the voltage across the gas-filled diode, and terminates when the voltage across the gap reaches its maximum value. The electron beam with an average electron energy of 60 to 80 keV and a current amplitude of ≥70 A is obtained. It is assumed that the electron beam is formed from electrons produced in the gap due to gas ionization by fast electrons when the intensity of the field between the front of the expanding plasma cloud and the anode reaches its critical value. A nanosecond volume discharge with a specific power input of ≥400 MW/cm³, a density of the discharge current at the anode of up to 3 kA/cm², and specific energy deposition of ∼1 J/cm³ over 3 to 5 ns is created.     

Specific features of the strain-induced order-disorder phase transition and its mechanisms

In the present paper, the methods of x-ray diffractometry are used to investigate the influence of plastic deformation on the long-range atomic order in alloys with L1₂, L1₂(M), and L1₂(MM) superlattices. The influence of ordering energy, initial values of the long-range order parameter, and average sizes of antiphase domains on the specific features of the dependence of long-range order parameter on the strain degree is considered. It is demonstrated that the wetted strain-induced order-disorder phase transition occurs with rapid accumulation of antiphase boundaries that play an important role in the destruction of long-range atomic order.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 21–32, September, 2004.     

Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown. Minimum metallic conductivities in p-CdSnAs₂ are determined for Mott and Anderson transitions. Special features of the metal-dielectric transformation in weakly-doped narrow- and high energy-gap semiconductors are discussed for the case of hydrogen-like impurities. Anderson localization in WHDCS is also considered. Phase diagrams are presented.     

Anomalies in the Absorption and Reflection of a High-Power Ultrashort Laser Pulse by a Plasma with a Solid-State Density

The patterns of absorption and reflection of an ultrashort laser pulse by a plasma with a solid-state density, which are realized in the mode of the normal skin effect, are studied. It is shown that a decrease in low-power pulse duration shorter than the period corresponding to the fundamental frequency of radiation leads to an increase in the absorption coefficient. If the pulse power is so high as to provide electron heating during a time shorter than the reciprocal fundamental frequency, nonlinear suppression of absorption takes place and the spectrum of the reflected radiation contains odd harmonics of the fundamental frequency.     

Renormalization Effects in the Spectrum of a Coherently Driven Exciton–Biexciton System

Starting from the total Hamiltonian of an excited exciton–biexciton system, nonresonant renormalizations in the electronic spectrum of a coherently driven direct semiconductor are considered. Stringent group-theoretical inclusion of the particle spin in the Hamiltonian allows one to account for the dependence of different renormalization effects on polarizations of the incident laser fields. On the example of circularly polarized driving and probing pulses it is shown that the kind of observed renormalization is defined by the pump-and-probe polarization geometry. Thus, the exciton optical Stark effect must appear in the case of co-circular pump-and-probe, whereas a mixing of the polariton and biexciton spectra is possible only in the case of counter-circular pump-and-probe. The polariton--biexciton dispersion renormalization may manifest itself as synchronous splittings of the exciton--polariton and biexciton spectra under resonant pumping at a frequency of the polariton--biexciton transition, or in their shifts in opposite directions under near-resonant pumping. The mechanisms of both kinds of renormalization effects are analyzed, and the dependence of their characteristics on the pump parameters and microscopic parameters of the exciton–biexciton–photon system is established. An evaluation of the characteristics shows that the effect of polariton–biexciton dispersion renormalization dominates in the spectra of semiconductors with stable biexciton formation. Results of the theoretical study provide an adequate explanation of available experimental data.