Radiation Hardness of Nd:GdVO4 Laser Crystal under γ-Ray Irradiation

Physics of Wave Phenomena - The radiation hardness of neodymium-doped gadolinium vanadate crystal (Nd:GdVO4) has been investigated. Crystal with sizes of 4×4×8 mm doped to a level of 0.5%...     

Localization conditions of square partial sums of a multiple trigonometric fourier series in the classes of S. M. Nikol'skii

Translated from Matematicheskie Zametki, Vol. 46, No. 4, pp. 3–7, October, 1989.     

Equivalence of a part of derived chains of boundary-value problems for second-order ordinary differential equations

A method is proposed for obtaining criteria for the equivalence of a part of derived chains of boundary-value problems for second-order differential equations with a spectral parameter in boundary conditions.Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 44, No. 8, pp. 1003–1011, August, 1992.     

Features of clathrate formation of <Emphasis Type="Italic">trans</Emphasis>-9,10-dihydro-9,10-ethanoanthracene-11,12-dicarboxylic acid

Structural data illustrating various ways of association of the molecules of host and guest observed in the clathrates of trans-9,10-dihydro-9,10-ethanoanthracene-11,12-dicarboxylic acid (DED) with chloroform, ethyl propionate, 1,4-dioxane and acetone are presented. The following types of host-guest interactions are considered: “true clathrate” without host-guest hydrogen bonds (DED + chloroform, DED + ethyl propionate), infinite associate (DED + 1,4-dioxane) and discrete associate (DED + acetone).     

Luminescence of defect centers in yttrium–aluminum garnet crystals

Spectral–kinetic properties of the 2.38 eV emission in neutron-irradiated and as-received yttrium aluminum garnet (Y₃Al₅O₁₂) crystals are investigated. This luminescence band as well as its lifetime and the temperature dependence are analyzed. It is suggested that the 2.38 eV luminescence band is due to the strongly allowed transition of the F⁺-center in garnet crystals. Possible reasons that may explain the observed temperature dependence of this emission intensity are discussed.     

Characteristics of the formation of radiation defects in silicon structures

The method of deep-level transient spectroscopy is used to investigate aspects of the formation of radiation defects in silicon p ⁺-n diffusion structures when bombarded by accelerated electrons. It is shown that for base thicknesses of the p ⁺-n structures in the range 0.2–0.6mm a substantial change in the concentration of the radiation defects formed in this way is observed, having a maximum at 0.25 mm. Below 0.2 mm and above 0.6 mm the concentration of radiation defects exhibits a weak dependence on base thickness. The observed effect is explained by variation of the relative concentrations of vacancies and interstitial silicon atoms in the base during formation of p ⁺-n pairs. Zh. Tekh. Fiz. 69, 121–123 (January 1999)     

Generalized Localization Principle for Continuous Wavelet Decompositions

Mathematical Notes - Spherically symmetric continuous wavelet decompositions are considered, and the notion of Riesz means is introduced for them. Generalized localization is proved for the...     

Physicochemical studies of the structure of chitosan and chitosan ascorbate nanoparticles

Russian Chemical Bulletin - The structure and characteristics of chitosan (CS NPs) and chitosan ascorbate nanoparticles (CSA NPs) were studied by physicochemical methods. Atomic force microscopy...     

The generalized localization for multiple Fourier integrals

In this paper we investigate almost-everywhere convergence properties of the Bochner-Riesz means of N-fold Fourier integrals under summation over domains bounded by the level surfaces of the elliptic polynomials. It is proved that if the order of the Bochner-Riesz means s?(N−1)(1/p−1/2), then the Bochner-Riesz means of a function f∈Lp(RN), 1?p?2 converge to zero almost-everywhere on RN?supp(f).     

Parameters of the cathode spot upon field emission

This work is devoted to studying the parameters of the cathode spot of a vacuum arc. According to calculations under conditions of autoelectronic emission, the temperature of the cathode spot is T _n = (1–2.5) × 10³ K, the electric-field strength is E = (1–6) × 10⁷ V cm^?1, and the current density in the spot is j _n = (0.15–3) × 10⁷ A cm^?2. The values of the cathode-spot parameters for cathodes of different materials are obtained and the type of electron emission is determined.