HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam

We show that HfO₂/AlGaN/GaN structures with HfO₂ layer deposited using an e‐beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO₂ was found ε_HfO > 23–24, which is close to the highest re‐ ported values for this material. The leakage current did not exceed 10^–4 A/cm² at the threshold voltage. The comparison of the losses in the samples with and without HfO₂ indicates low concentration of the interface traps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Simulation of Birefringence and Absorption in InGaAs-GaAs Multiple Quantum Well Acoustooptic Modulators Operating Near 980 nm

This paper presents the simulation of surface acoustic wave (SAW)-induced absorption coefficient and refractive index change in InGaAs-GaAs multiple quantum well (MQW) structures operating near 980 nm. The exciton problem is solved in two dimensional momentum space to include the non-axial effect due to strain induced valance band mixing and nonparabolicity. The optical absorption coefficient and refractive index changes near the band gap in the MQWs are calculated as a function of SAW power.     

Variation of interband interaction strength in odd-A nuclei

Bandcrossing in 31 rotational bands of 25 different odd-A nuclei in the rare-earth region has been analysed by using a two-band mixing formalism with a constant band interaction within the framework of the effective decoupling picture. The interband interaction strengthV between the one-quasiparticle band and the three-quasiparticle band exhibits a variation with the neutron number which is not different from the oscillatory behaviour observed in even-even nuclei and does not show signs of any appreciable phase shifting as predicted by theory. However, the overall range of variation ofV is greater than that observed in even-even systems.     

Cobalt Hexacyanoferrate-Modified Electrode for Amperometric Assay of Hydrazine

A graphite electrode modified with cobalt hexacyanoferrate by mechanical immobilization was used for amperometric determination of hydrazine. The modified electrode exhibits good catalytic activity for the oxidation of hydrazine at a reduced overpotential with remarkable sensitivity. The modified electrode showed a linear response for hydrazine in the concentration range of 2.0 × 10^–5 to 2.8 × 10^–4 M. The detection limit was 9.8 × 10^–6 M (S/N = 3). The proposed modified electrode was simple, sensitive, rapid, stable and promising.     

Hadron production near threshold

Final state interaction effects inpp→ pΛK ⁺ andpd →³Heη reactions are explored near threshold to study the sensitivity of the cross-sections to thepΛ potential and theηN scattering matrix. The final state scattering wave functions between Λ andp andη and³He are described rigorously. The Λ production is described by the exchange of one pion and aK-meson between two protons in the incident channel. Theη production is described by a two-step model, where in the first step a pion is produced. This pion then produces anη by interacting with another nucleon     

Low-density close-closed loop burst error detecting codes

In this paper, we study cyclic codes detecting a subclass of close-closed loop bursts viz. low-density close-closed loop bursts. A sub-class of CT close-closed loop bursts called CT low-density close-closed loop bursts is also studied.     

Study of the effect of swift heavy Ni ion irradiation on ruby single crystal by using the XANES and EXAFS techniques

We have made the XAFS measurements at the Cr–K-edge on natural Indian ruby single crystals (corundum) and its two irradiated samples with fluence 1×10¹² Ni⁶⁺ and 5×10¹² Ni⁶⁺ ions/cm². Irradiated samples show interesting changes in their physical appearance. XANES measurements show progressive decrease in Δ_oct value on increase of Ni fluence in irradiated samples. EXAFS measurements on these samples show decrease in Cr–O distance on increase of Ni fluence. Lowering of Δ_oct value is correlated with the increase of Cr–O distance.     

Glasses for lithography

The highest resolution in a lithographic process is often determined by the properties of the resist material. With the currently used polymeric resists, a resolution of better than 100 nm has been achieved under manufacturing conditions, but the future nanoscale devices will require a 10 times superior resolution. In this paper we present an overview of the resist materials, especially with regard to limiting resolution. In principle, inorganic resists should have higher limiting resolution than polymer resists due to smaller fundamental structural units and stronger bonds in the former. However, compositional and/or structural inhomogeneities may limit their ultimate resolution. New results are presented that indicate chalcogenide glasses as promising photo and electron beam resists, which also have the advantages of greater hardness, resistance to acids, easy fabrication in thin film form, and the unique phenomena like radiation enhanced diffusion.     

Model based online diagnosis of unbalance and transverse fatigue crack in rotor systems

A model based technique for online identification of malfunctions in rotor systems is discussed. Presence of fault changes the dynamic behavior of the system. This change is taken into account by equivalent loads acting on the undamaged system model. Equivalent loads are fictitious forces and moments acting on the undamaged system model, which generate a dynamic behavior identical to that of the real damaged system. The mathematical representation of equivalent loads is referred to as Fault Model. The work focuses on developing a fault model for a transverse fatigue crack in shaft and testing it through simulated studies. The basic principle of the technique is validated for unbalance identification, through numerical simulations as well as by experiments on a real rotor system.