纳米晶粉体加入量对CSBT陶瓷厚膜结构及性能的影响

采用粉末溶胶法和快速层层退火工艺,在Pt/Ti/SiO2/Si基片上制备了钙锶铋钛(CSBT)陶瓷厚膜.研究了纳米晶粉体加入量对钙锶铋钛陶瓷厚膜结构及性能的影响.结果表明:纳米晶粉体加入量在较宽的范围内可以制备出高质量的钙锶铋钛厚膜,厚膜的显微结构及铁电性能对粉末的加入量比较敏感,适当的加入量有利于促使厚膜晶粒的a轴择优取向,从而有利于膜的铁电性能.当粉末加入量为7.5 g/100 mL时,钙锶铋钛陶瓷厚膜晶粒出现a轴择优取向,剩余极化和矫顽场强分别为6.3 μC/cm2和57 kV/cm,具有较高的应用价值.     

切向喷射式MOCVD反应器的设计与数值模拟

本文提出一种新的切向喷射式MOCVD反应器,反应气体从均匀分布于内壁的切向进口喷管喷入反应器,尾气从位于反应器中心的上方或下方出口排出.通过切向喷射,使气体发生人工可控的螺旋流,在水平方向逐渐旋转与加速,从而补偿反应物浓度从边缘进口到中心出口的沿程损失,以便获得均匀的薄膜沉积.针对新的反应器设计,结合GaN的MOCVD生长进行了三维数值模拟,确定了喷管夹角、喷管数目和反应器高度对生长区的温场、流场和浓度场的影响,优化了参数组合,并与传统的垂直喷射式反应器作了对比.此外,这款新型反应器能够摆脱复杂的托盘旋转系统.     

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-SemiconductorField-Effect Transistors

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects arebecoming more and more significant. In this work, a model for thesurrounding-gate (SG) nMOSFET is developed. The Schrödinger equation issolved analytically. Some of the solutions are verified via results obtainedfrom simulations. It is found that the percentage of the electrons withlighter conductivity mass increases as the silicon body radius decreases, oras the gate voltage reduces, or as the temperature decreases. The centroidof inversion-layer is driven away from the silicon-oxide interface towardsthe silicon body, therefore the carriers will suffer less scattering fromthe interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.     

Surface mico-structures on amorphous alloys induced by vortex femtosecond laser pulses

This paper investigates the generation of self-organized surface structures on amorphous alloys by vortex femtosecond laser pulses. The scanning electron microscope characterizations show that the as-formed structures are periodic ripples, aperiodic ripples, and `coral-like' structures. Optimal conditions for forming these surface structures are determined in terms of pulses number at a given pulse energy. The applicable mechanism is suggested to interpret the formation and evolution of the `coral-like' structures.     

预失真半导体激光列阵技术

相干半导体激光列阵体积小、重量轻,输出能量密度高,非常适于用作对光源尺寸要求苛刻的航天激光光源。为避免随航天器在轨运行的半导体列阵经受变化梯度剧烈的恒星、行星、空间低温热沉的交替加热和冷却的影响,以便能够正常工作,采用潜望式结构设计,将列阵置于舱内,列阵向航天器外输出激光必须经由舱外输出反射镜完成。然而,舱外输出反射镜受周围热环境影响和列阵输出激光束照射,会产生随机热变形,导致输出舱外的激光能量发散;并且,舱外输出反射镜面热变形导致镜面法向偏转,使得输出光束产生较大的指向偏转误差,这极大地降低了能够作用于目标之上的激光束的能量密度,严重恶化输出舱外的光束质量。通过理论推导结合ANSYS有限元分析软件和相关实验,在研究清楚相干半导体激光列阵作为航天激光源的构造、其光场与周围热环境共同作用于舱外输出反射镜的规律与特点后,给出了航天预失真半导体激光列阵激光源技术,通过回波法适时测量舱外输出反射镜引起的波前畸变,处理器配合D/A和高压放大器,驱动驱动器,使舱内添加的反射镜预失真成形,适时使列阵输出产生预失真波前畸变,以抵消舱外输出反射镜的热变形对输出舱外的激光束的影响。相关系统运行实验结果显示,此技术使半导体激光列阵能够适应宇航环境,向舱外输出保障质量的激光束。     

基于分数阶Fourier变换的数字图像实值加密方法

构造了一种新的保实化的分数阶Fourier变换,提出了一种基于该变换的数字图像实值加密方法。利用保实分数阶Fourier变换的保实特性和阶数可加性等完成了数字图像的加密与解密,明文和密文分别位于空域和由密钥决定的保实分数阶Fourier变换域中,具有较强的抗统计破译能力。密图是一个实值图像,便于显示和存储。仿真实验结果表明,该加密方法密钥简单,无数据膨胀,对参数敏感度高,具有一定的鲁棒性和安全性。在信息安全领域具有良好的研究前景和实用价值。     

Optical image encryption based on the multiple-parameter fractional Fourier transform

A novel image encryption algorithm is proposed based on the multiple-parameter fractional Fourier transform, which is a generalized fractional Fourier transform, without the use of phase keys. The image is encrypted simply by performing a multiple-parameter fractional Fourier transform with four keys. Optical implementation is suggested. The method has been compared with existing methods and shows superior robustness to blind decryption.     

Formation of two-dimensional periodic microstructures by a single shot of three interfered femtosecond laser pulses on the surface of silica glass

Two-dimensional periodic microstructures, including both microholes and micro-orbicular platforms, have been fabricated on the surface of silica glass by a single shot of three interfered femtosecond laser pulses. The three-dimensional structure of a fabricated hexagonal lattice can be revealed by atomic force microscopy. The formation of the microstructure and the dynamic process of the interaction between the femtosecond laser and the silica glass have been discussed.     

Growth of transparent conducting nano-structured In doped ZnO thin films by pulsed DC magnetron sputtering

Transparent conducting nano-structured In doped zinc oxide (IZO) thin films are deposited on corning 7059 glass substrates by bipolar pulsed DC magnetron sputtering with variation of pulsed frequency and substrate temperature. Highly c-axis oriented IZO thin films were grown in perpendicular to the substrate on the 30 kHz and 500 °C. The IZO films exhibited surface roughness of 3.6 nm similar to the commercial ITO and n-type semiconducting properties with electrical resistivity (carrier mobility) of about 5 × 10⁻³ Ω cm (14 cm²/V s). The optical characterization showed high transmittance of over 85% in the UV-vis region and exhibited the absorption edge of near 350 nm. In micro-Raman spectra, the origin of two additional modes is attributed to the host lattice defect due to the addition of In dopant. These results suggest that the IZO film can possibly be applied to make transparent conducting electrodes for flat panel displays.     

基于激光微加工的新型光纤法布里-珀罗折射率传感器

提出了一种新型的光纤法布里-珀罗(F-P)折射率传感器,该传感器由单模光纤头端面和靠近该端面的由157 nm激光加工而成的短空气腔构成.短空气腔两个端面的反射光和光纤头端面的反射光发生干涉形成了传感器的反射谱干涉条纹.干涉条纹的对比度受光纤头端面外部的折射率影响,在干涉条纹包络的波谷处具有最大的对比度,外部待测折射率可通过计算该处的对比度得到.传感器对温度不敏感同,测量范围广.在1.33至1.441范围内,折射率灵敏度约为27 dB,分辨率约为1.12X10-4;在1.45～1.62范围内.折射率灵敏度约为24 dB,分辨率约为1.26×10-4.