Diffusion-induced modulational instability in magnetised semiconductor plasmas: effect of carrier heating

The present paper is aimed to the exploration of modulational amplification in transversely magnetised diffusive semiconductors. By considering that the origin of modulational interaction lies in the third-order optical susceptibility c⁽³⁾\chi^{(3)} arising from the nonlinear diffusion current density and using coupled mode theory, an analytical investigation of frequency modulational interaction between co-propagating laser beams and internally generated acoustic mode is presented. We have studied the steady state and transient amplification characteristics of modulated waves arising in the transversely magnetised semiconductor plasmas. The effect of carrier heating adds new dimensions to the present study. The heating effect reduces the required threshold amplitude of wave and enhances steady-state as well as transient gain of the generated acoustic mode.     

Low dissipative entropy stable schemes using third order WENO and TVD reconstructions

A low dissipative framework is given to construct high order entropy stable flux by addition of suitable numerical diffusion operator into entropy conservative flux. The framework is robust in the sense that it allows the use of high order reconstructions which satisfy the sign property only across the discontinuities. The third order weighted essentially non-oscillatory (WENO) interpolations and high order total variation diminishing (TVD) reconstructions are shown to satisfy the sign property across discontinuities. Third order accurate entropy stable schemes are constructed by using third order WENO and high order TVD reconstructions procedures in the diffusion operator. These schemes are efficient and less diffusive since the diffusion is actuated only in the sign stability region of the used reconstruction which includes discontinuities. Numerical results with constructed schemes for various test problems are given which show the third order accuracy and less dissipative nature of the schemes.     

Evaluation of Morphology and Deformation Micromechanisms in Multilayered PP/PS Films: An Electron Microscopy Study

Nanostructured polymers and ultra-thin polymer layers are used more and more in technical applications like nanotechnology and microelectronics. Therefore, it is really important to understand the size-scale dependent properties as bulk polymers become thinner and more two-dimensional. Here the morphology as well as the macroscopic and the microscopic deformation behaviour of multilayered films of polypropylene (PP) and polystyrene (PS) have been investigated. For investigation different microscopic techniques and tensile testing were used. The films were prepared by multilayer coextrusion, whereas the composition of PP and PS and the film thickness – and therefore the thickness of each layer – varied. The thinnest calculated thickness of a single layer was about 5 nm. It is shown that the PP/PS films consist usually of homogeneous layers with only few defects. As the composition of PP/PS deviates strongly from 50/50 or the films get thinner the number of defects increases and the layered system turns to irregular lamellar system. In macroscopic tensile tests the small PS layers affect the elongation at break enormously: Most of the samples are brittle. For the films with a composition of PP/PS 90/10 and the film PP/PS 70/30 with a film thickness of 25 µm an elongation at break of 66% and higher could be reached. Transmission electron microscopy on these samples shows that the layers are characterized by plastic yielding in local deformation zones.     

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

ABSTRACT

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?10¹⁵ and 4?×?10¹⁷?ions?cm^?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?10¹⁷?ion?cm^?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?10¹⁷?ions?cm^?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior.     

Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study

The Silicon–Germanium-on-Insulator (SGOI) and Silicon-on-Insulator (SOI) based MOS structures are spearheading the strained-Si technology. The present work compares the subthreshold characteristics of two short-channel back-gated (BG) strained-Si-on-SGOI (SSGOI) and BG strained-Si-on-Insulator (SSOI) MOSFETs, and provides some solutions to overcome the degradation in subthreshold characteristics with the unrelenting downscaling of the devices. Subthreshold behaviors of the MOS structures are based on surface potential model which is determined by solving the 2D Poisson's equation with suitable boundary conditions by evanescent mode analysis for both of the MOS structures. The closed form expressions for threshold voltage, subthreshold current and subthreshold swing have been derived for symmetrical as well as independent gate operation (IGO). In addition, the Electrostatic integrity (EI) factors for SSOI and SSGOI MOS structures have been estimated and compared with Double-Gate (DG) MOSFET. The numerical simulation results, obtained by ATLAS?, a 2D device simulator from Silvaco, have been used to assess the validity of the models.     

An Efficient One‐pot Three‐component Method for the Synthesis of 5‐Amino‐3‐(2‐oxo‐2H‐chromen‐3‐yl)‐7‐aryl‐7H‐thiazolo[3,2‐a]pyridine‐6,8‐dicarbonitriles

A facile, convenient, and adequate method has been developed for the synthesis of novel 5‐amino‐3‐(2‐oxo‐2H‐chromen‐3‐yl)‐7‐aryl‐7H‐thiazolo[3,2‐a]pyridine‐6,8‐dicarbonitriles ( 6 ) by employing 2‐(4‐(2‐oxo‐2H‐chromen‐3‐yl)thiazol‐2‐yl)acetonitrile ( 3 ) as an important precursor. Initially, we have synthesized the target compounds in a stepwise manner and then approached a tandem method to examine the feasibility of one‐pot method. Subsequently, one‐pot three‐component protocol has been established for the synthesis of title compounds by the reaction of 3 with benzaldehyde and malononitrile in refluxing ethanol engender a new six‐membered thiazolo[3,2‐a] pyridine as a hybrid scaffold. Reaction conditions were optimized for this reaction and a broad substrate scope with various aryl and heteroaryl aldehydes make this protocol very practical, attractive, and worthy. Mechanistic aspects for the formation of these compounds were outlined comprehensively. Characterization of these newly synthesized compounds was achieved by means of IR, ¹H NMR, ¹³C NMR, and HRMS.     

Scaling behavior in on‐chip field‐amplified sample stacking

Field amplified sample stacking (FASS) uses differential electrophoretic velocity of analyte ions in the high‐conductivity background electrolyte zone and low conductivity sample zone for increasing the analyte concentration. The stacking rate of analyte ions in FASS is limited by molecular diffusion and convective dispersion due to nonuniform electroosmotic flow (EOF). We present a theoretical scaling analysis of stacking dynamics in FASS and its validation with a large set of on‐chip sample stacking experiments and numerical simulations. Through scaling analysis, we have identified two stacking regimes that are relevant for on‐chip FASS, depending upon whether the broadening of the stacked peak is dominated by axial diffusion or convective dispersion. We show that these two regimes are characterized by distinct length and time scales, based on which we obtain simplified nondimensional relations for the temporal growth of peak concentration and width in FASS. We first verify the theoretical scaling behavior in diffusion‐ and convection‐dominated regimes using numerical simulations. Thereafter, we show that the experimental data of temporal growth of peak concentration and width at varying electric fields, conductivity gradients, and EOF exhibit the theoretically predicted scaling behavior. The scaling behavior described in this work provides insights into the effect of varying experimental parameters, such as electric field, conductivity gradient, electroosmotic mobility, and electrophoretic mobility of the analyte on the dynamics of on‐chip FASS.