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961.
D. Fong J. H. Hamilton A. V. Ramayya J. K. Hwang C. Goodin K. Li J. Kormicki J. O. Rasmussen Y. X. Luo S. C. Wu I. Y. Lee A. V. Daniel G. M. Ter-Akopian G. S. Popeko A. S. Fomichev A. M. Rodin Yu. Ts. Oganessian M. Jandel J. Kliman L. Krupa J. D. Cole M. A. Stoyer R. Donangelo W. C. Ma 《Physics of Atomic Nuclei》2006,69(7):1161-1167
The hot bimodal fission of 252Cf is reexamined with new high-statistics data. We constructed a γ-γ-γ coincidence cube for binary fission and LCP-gated γ-γ matrix for ternary fission. By identifying the secondary fission fragments from their γ-ray transitions, we measured the yields for various fission splits. The normal neutron yield distribution is found to be
Gaussian for Xe-Ru. However, the binary fission split of Ba-Mo is found to exhibit a bimodal neutron distribution with the
“hot mode” corresponding to ≈3.1% of the total yield. In α ternary fission, the first measurements of yields for specific fission splits are presented. The Te-α-Ru and Xe-α-Mo neutron yields fit well with a single mode, but the Ba-α-Zr split shows evidence for an enhanced hot mode with an intensity of ≈13.8% of the normal mode.
The text was submitted by the authors in English. 相似文献
962.
T. Yu. Gumerov A. F. Dobrynina R. A. Yusupov V. P. Barabanov 《Russian Journal of Applied Chemistry》2006,79(12):1935-1939
The behavior of real disperse systems with organic impurities was examined under conditions of destabilization by inorganic coagulants. A number of physicochemical methods of analysis and a simulation method were used to identify the character and type of the complexes formed and to calculate their stability constants. 相似文献
963.
Simon R. Blackburn 《Journal of Combinatorial Theory, Series A》2006,113(7):1572-1581
The paper contains proofs of the following results. For all sufficiently large odd integers n, there exists a set of 2n−1 permutations that pairwise generate the symmetric group Sn. There is no set of 2n−1+1 permutations having this property. For all sufficiently large integers n with n≡2mod4, there exists a set of 2n−2 even permutations that pairwise generate the alternating group An. There is no set of 2n−2+1 permutations having this property. 相似文献
964.
Using ultra-high vacuum scanning tunneling microscopy (UHV-STM), we show that copper-phthalocyanine (CuPc) grows in a well ordered manner on hydrogen passivated vicinal silicon surfaces. CuPc grows one-dimensionally parallel to the monatomic steps on the vicinal silicon surface. Surprisingly, elongated clusters of the CuPc parallel to the step directions are formed even on the middle of the terraces well away from the step edges. The one-dimensional growth mode continues even after the full monolayer coverage on the substrate which results in strongly oriented growth mode of a thin film of CuPc on the vicinal silicon surfaces. 相似文献
965.
H. Kim R.C.Y. Auyeung M. Ollinger G.P. Kushto Z.H. Kafafi A. Piqué 《Applied Physics A: Materials Science & Processing》2006,83(1):73-76
Low-temperature laser sintering has been successfully demonstrated to improve the overall conversion efficiency of dye-sensitized solar cells. Mesoporous TiO2 electrodes were prepared from a colloidal solution of TiO2 nanopowders by a laser direct-write technique and then sintered by a quasi-continuous-wave UV laser (λ=355 nm) for the fabrication of dye-sensitized solar cells. The overall conversion efficiency of the cells based on the laser-sintered TiO2 electrodes was double that of the devices with non-laser-treated TiO2 electrodes. This enhancement is attributed to both the removal of organic additives and the improved inter-nanoparticle electrical contacts induced by the laser-sintering process, which led to an increase in porosity and dye-absorption sites in the TiO2 electrodes. PACS 61.80.Ba; 61.46.+w; 73.22.-f; 84.60.Jt 相似文献
966.
In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 °C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 °C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering. 相似文献
967.
The electro-optic response of ferroelectric smectic C* liquid crystals has been studied. Anomalous switching behaviour of such materials which possess a negative dielectric anisotropy has been reported. These materials show a minimum in response time at a sufficiently high field. We present results showing the dependency of this minimum upon spontaneous polarisation and the effect of AC bias. Calculations based upon the equation of motion of the director around the cone are presented which describe this effect and its dependence on the relative magnitudes of the spontaneous polarization and dielectric anisotropy of the material. Good agreement with the experimental results is found. 相似文献
968.
We have characterized multidielectric scaled SONOS nonvolatile memory structures with the quasi-static linear voltage ramp (LVR) technique and dynamic pulse measurements. We have formulated physically-based ERASE/WRITE and retention methods with deep level amphoteric traps which capture and emit carriers to the bands in the silicon nitride film. Amphoteric trap parameters are extracted by the LVR technique. ERASE/WRITE and retention amphoteric trap model simulations agree well with the experimental dynamic pulse measurements. Experimental scaled SONOS structures have been fabricated with tunnel oxide XOT=20 Å, nitride XN=30 Å and blocking oxide XOB=55 Å and demonstrated a static flatband shift of 3.6 V with ±5 V programming voltages. These structures may be used as the nonvolatile memory element in high density VLSI circuits. 相似文献
969.
970.
G.J. Zalmai Qing-hong Zhang 《应用数学学报(英文版)》2007,23(2):217-234
In this paper,we discuss a large number of sets of global parametric sufficient optimality condi-tions under various gcneralized (η,ρ)-invexity assumptions for a semi-infinite minmax fractional programmingproblem. 相似文献