TM掺杂Ⅱ-Ⅳ-Ⅴ2黄铜矿半导体的电磁性质

利用自旋局域密度泛函的第一性原理对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅱ-Ⅳ-Ⅴ2(CdGeP2和ZnGeP2)黄铜矿半导体的电磁性质进行系统计算，结果发现：V和Cr掺杂的CdGeP2和ZnGeP2将出现铁磁状态(FM)，Mn，Fe以及Co掺杂的CdGeB和ZnGeP2将出现反铁磁状态(AFM)，而Ni掺杂时，稀磁半导体(DMS)的磁性比较不稳定，其中Cr掺杂的CdGeP2和ZnGeP2将可能是具有较高居里温度Tc的DMS，当TM-3d电子的t2g态部分被填充时，其掺杂的DMS将出现FM状态；而当TM-3d电子的t2g态全满或者全空时，其掺杂的DMS将出现AFM状态，在(Cd，Mn)GeP，和(Zn，Mn)(GeP2中分别掺入电子和空穴载流子，可以发现载流子是否具有TM-3d电子的巡游特性是。DMS是否出现FM状态的主要原因。     

La(OH)3凝聚的形态和粒径分布研究

在形态空间中对La(OH)_3凝聚体系统的形态分布进行了描述。在此基础上, 对La(OH)_3凝聚体的粒径分布进行了模拟, 进而提出了La(OH)_3凝聚体的形成机制。     

由对苯二酚合成2,5—二甲氧基对苯二苄氯锍盐

以对苯二酚为基本原料，通过改进的甲氧基化、氯甲基化、锍化３个反应合成，得到（２，５－二甲氧基对苯乙炔）单体双锍盐２，５－二甲氧基对苯二苄氯锍盐，且产率达８４％，并对每步反应的合成条件及原因进行了解释，运用色谱／质谱联用仪和核磁共振仪对每步产物进行了表征     

Passively Q-switched Nd:GdVO4 solid-state lasers with stabilized repetition rates

By modulating the pump current, we developed a passively Q-switched diode-pumped all-solid-state laser with a repetition rate stabilized up to 10-7. It was experimentally demonstrated that the stability could sustain for an arbitrarily long time. Moreover, the stabilized repetition rates which were synchronized with different modulating frequencies were tuneable in a wide range, by adjusting the period of the pumping cycle only. The output single-pulse energy was also stabilized, which was independent on the pump power after reaching a saturable value.     

ASYMPTOTIC BEHAVIOR OF SOLUTIONS OF SOME NONLINEAR DIFFERENCE EQUATIONS

In this paper, we investigate the asymptotic behavior of the extremal solutions of a difference equation and their character and prove the existence of the non-extremal solutions.     

Photoelectric behaviour of lattice-matched GaAs/Al x Ga1- x As quantum well electrodes

The photoelectric properties of the lattice-matched GaAs/A1 _x Ga_l - _x As quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing the quantum yield three times that of GaAs bulk materials, was designed and fabricated. Project supported by the National Natural Science Foundation of China.     

Exchange-enhanced spin-splitting in a two-dimensional electron gas in the presence of the Rashba spin–orbit interaction

We present a theoretical study on how many-body effects can affect the spin-splitting of a two-dimensional electron gas in the presence of the Rashba spin–orbit interaction. The standard Hartree–Fock approximation and Green's function approach are employed to calculate the energy spectrum and density of states of a spin-split two-dimensional electron gas (2DEG). We find that the presence of the exchange interaction can enhance significantly the spin-splitting of a 2DEG on top of the Rashba effect. The physical reasons behind this important phenomenon are discussed.     

RhⅩⅥ─InⅩⅩ离子n＝4Complex跃迁谱线和振子强度的计算

对类锌等电子序列ＺｎⅠ－ＳｎⅩⅩⅠ离子ｎ＝４Ｃｏｍｐｌｅｘ组态的能级结构和组态相互作用进行了理论分析。通过分析ＨＸＲ方法理论计算值与实验值之差ΔＥ随Ｚｃ的变化关系，找出了用于最小二乘拟合计算的半经验拟合公式，用此公式预测了ＣｄⅩⅠⅩ－ＩｎⅩⅩ离子ｎ＝４Ｃｏｍｐｌｅｘ中至今还没有实验值的部分能级。给出４ｓ２－４ｓ４ｐ，４ｓ４ｐ－４ｓ４ｄ跃迁波长和相应的ＨＸＲ方法计算的振子强度，同时也对预测能级值的可靠性作了说明     

指数型二分性,Melnikov函数和异宿轨道

本文用不同于Ｐａｌｍｅｒ＾［２］的方法，讨论了非自治微分方程存在异宿轨道的条件。得到了已知文献中不同的一个Ｍｅｌｍｉｋｏｖ型的函数。