Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

Reversible addition–fragmentation transfer (RAFT) copolymerization of methyl methacrylate and styrene in miniemulsion

In the reversible addition–fragmentation transfer (RAFT) copolymerization of two monomers, even with the simple terminal model, there are two kinds of macroradical and two kinds of polymeric RAFT agent with different R groups. Because the structure of the R group could exert a significant influence on the RAFT process, RAFT copolymerization may behave differently from RAFT homopolymerization. The RAFT copolymerization of methyl methacrylate (MMA) and styrene (St) in miniemulsion was investigated. The performance of the RAFT copolymerization of MMA/St in miniemulsion was found to be dependent on the feed monomer compositions. When St is dominant in the feed monomer composition, RAFT copolymerization is well controlled in the whole range of monomer conversion. However, when MMA is dominant, RAFT copolymerization may be, in some cases, out of control in the late stage of copolymerization, and characterized by a fast increase in the polydispersity index (PDI). The RAFT process was found to have little influence on composition evolution during copolymerization. The synthesis of the well‐defined gradient copolymers and poly[St‐b‐(St‐co‐MMA)] block copolymer by RAFT miniemulsion copolymerization was also demonstrated. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 6248–6258, 2004     

一类含有非线性传染率的传染病模型的全局稳定性

讨论了一类带有非线性传染率的SIRS型传染病模型,得到了无病平衡点和地方病平衡点存在的阈值条件,借助构造Dulac函数和Liapunov函数,找到了两类平衡点全局渐近稳定的充要条件.     

INVERSE EIGENVALUE PROBLEM OF HERMITIAN GENERALIZED ANTI-HAMILTONIAN MATRICES

§1　IntroductionWe considerthe following inverse eigenvalue problem offinding an n-by-n matrix A∈S such thatAxi =λixi,i =1,2 ,...,m,where S is a given set of n-by-n matrices,x1 ,...,xm(m≤n) are given n-vectors andλ1 ,...,λmare given constants.Let X=(x1 ,...,xm) ,Λ=(λ1 ,λ2 ,...,λm) ,then the above inverse eigenvalue problemcan be written as followsProblem Given X∈Cn×m,Λ=(λ1 ,...,λm) ,find A∈S such thatAX =XΛ,where S is a given matrix set.We also discuss the so-called opti…     

Titanium carbonitride films on cemented carbide cutting tool prepared by pulsed high energy density plasma

Hard films prepared by pulsed high energy density plasma (PHEDP) are characterized by high film/substrate adhesive strength, and high wear resistance. Titanium carbonitride (TiCN) films were deposited onto YG11C (ISO G20) cemented carbide cutting tool substrates by PHEDP at room temperature. XRD, XPS, SEM, AES, etc. were adopted to analyze the phases (elements) composition, microstructure and the interface of the films, respectively. The results show that, the uniform dense films are composed of grains ranging from 70 to 90 nm. According to the AES result, there is a broad transition layer between the film and the substrate, due to the ion implantation effect of the PHEDP. The transition layer is favorable for the film/substrate adhesion.     

拟线性抛物型方程广义解的局部有界性

本文给出了一类较广泛的拟线性抛物型方程广义解的局部有界性,进而也得到了解的Holder连续性.     

最小树的一般算法

本文根据设计并行算法的基本原则,给出了最小树的两个对偶定理.在此基础上,建立了两种对偶的同步并行算法的雏型.这两种算法恰恰在对偶的意义下,概括了以往的最小树算法.     

Researches of DC—Problem Under the Model S in which the Numbers of Defective Coins are not Fixed

In this paper,we research general Defective Cion Problem under the model S,i.e,the number d of Defective cions is not fixed. For d=O,1,or 2. we get some good results.     

关于无环Euler平面地图数目的注记

本文提供了组合上不等价的有根无环Euler平面地图以边数为参数的的数目,同时对于几乎无环的情形也给出了一个计数显式.     

动态模糊随机信息处理的数学方法

本文系统地概述了我们近年来提出的动态模糊随机信息处理的数学方法,内容包括模糊随机变量、模糊随机过程和模糊随机微分方程的基本解法等方面的基本概念、基本定义和某些重要的定理,以及动态系统的模糊随机响应与可靠性分析的方法等。这些方法是为我们研究工程实际问题的需要逐步发展起来的,对于处理某些类型的问题简便实用。