D—AKNS族的换位表示

本文根据曹策问教授的想法,求得了与D-AKNS族发展方程相联系的特征值之泛函梯度与Lenard算子对;并由此得到了D-AKNS族非线性发展方程的换位表示。文末还讨论了换位表示与定态D-AKNS方程之间的关系.     

高精度的光纤衰减系数测试系统的设计

利用常规仪器设备，设计了一套集光、机、电为一体的光纤衰减测量,实现了数字化监测显示，并可与微机接口；采用双光路法，消除了由于光源光强不稳定产生的误差。     

Transverse Effects in Slow Light Propagation

The effect of finite control beam on the transverse spatial profile of the slow light propagation in an electromagnetically induced transparency medium is studied. From the second-order wave equation and linear response of an EIT medium to the signal field, we find it is possible to produce an effective waveguide for the signal field. The existence and properties of a set of localized, stationary transverse modes are demonstrated. Especially, by carefully manipulating the profile of the control beam, we can realize single-mode propagation for the signal field, which may be important for potential applications.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

奇异黎曼度量下Г—等变分歧问题的Г—C°接触等价d决定性（下）

研究了奇异黎曼度量之下的 Γ-等变分歧问题中的 Γ- C°接触等价性 ,提供了 Γ- C°等价的判别法 .它们是 Percell.P.B,ZOU Jiang- chen,SU N W Z关于分歧问题有限决定性 C0理论中的有关结果的推广 .使用奇点理论及紧群表示方法给出了相关定理的证明     

拟因子试验设计在生产中的应用

根据生产实际,综合利用并列、赋闲列和拟水平试验设计,运用多重比较进行方差分析,寻找水泥熟料的最佳工艺.不仅解决了不同水平多因素试验问题,同时还可考虑交互作用,大大减少了试验次数,从而提高经济效益.     

关于微分熵的一类强偏差定理

利用关于乘积分布密度的相对熵和相对熵率的概念,建立了相依连续型随机变量序列关于参考微分熵的一类强偏差定理,证明中给出了将Laplace变换应用于微分熵强偏差定理的研究的一种途径．     

轻型汽车后桥半轴断裂件的组织及断口特征

采用光学显微镜和扫描电子显微镜等手段，对某轻型汽车40Cr后桥半轴断裂件的组织及断口特征进行了分析结果表明：半轴在调质处理时的淬火温度不够高，使其表层和心部组织中存在较多的铁素体相，造成了工件最终的硬度和疲劳强度不足，导致半轴在使用中发生扭转疲劳断裂．     

A hybrid active noise controller for finite ducts

A hybrid active noise controller (ANC) is proposed to solve some existing problems, which are related to the non-minimum phase (NMP) path models between uncollocated sensors and actuators in many ANC systems. For hybrid ANC schemes, the NMP path causes design difficulties to both feedforward and feedback control. These problems can be solved effectively by adding an extra actuator in the ANC system. A new design procedure is presented to take the greatest advantage of the extra actuator. Theoretical analysis and experimental results are presented to show the improved performance of the proposed ANC.     

Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散