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121.
JIAO Peng ZHANG Qi-han XU Jia-xi+{**} Key Laboratory of Bioorganic Chemistry Molecular Engineering of Ministry of Education College of Chemistry Molecular Engineering Peking University Beijing China 《高等学校化学研究》2006,(6)
IntroductionN,N′-Bis [1-( hydroxymethyl) alkyl] dicarboxa-mides are important intermediates for the syntheses ofbis-oxazolines, which are a class of the most importantand widely used ligands in catalytic asymmetric reac-tions[1,2]. On determining the str… 相似文献
122.
The impact of fabrication errors on a planar waveguide demultiplexer is analyzed based on an analytical method. The explicit
expression of the transfer function taking into account phase and amplitude errors is presented in order to analyze the loss
and crosstalk of the demultiplexer caused by fabrication errors. A basic requirement for the demultiplexer with a certain
crosstalk criterion can be easily obtained. Using an etched diffraction grating demultiplexer as an example, it is shown that
the analytical results have a good agreement with results from a numerical method. 相似文献
123.
124.
The purpose of this work is to investigate the weakened Ambrosetti–Prodi type multiplicity results for weak doubly periodic solutions of damped beam equations. By using the topological degree theory, the author obtains a result which is similar to the result for damped wave equations in the literature. 相似文献
125.
We present a semimonolithic frequency-doubler from 1080 to 540 nm with 80% doubling efficiency and up to 849-mW output power of green light. 相似文献
126.
The new phenylpropanoid diglycoside ligusinenoside A ( 1 ), and the two new 8,4′‐oxyneolignan(‘8‐O‐4′‐neolignan’) diglycosides ligusinenosides B ( 2 ) and C ( 3 ), together with nine known compounds, were isolated from the rhizomes of Ligusticum sinensis Oliv. The structures of 1 – 3 were elucidated on the basis of spectroscopic analyses. 相似文献
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128.
Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface. 相似文献
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130.