Renormalization group dependence of the QCD coupling

The general relation between the standard expansion coefficients and the beta function for the QCD coupling is exactly derived in a mathematically strict way. It is accordingly found that an infinite number of logarithmic terms are lost in the standard expansion with a finite order, and these lost terms can be given in a closed form. Numerical calculations, by a new matching-invariant coupling with the corresponding beta function to four-loop level, show that the new expansion converges much faster.     

Characterization of oxide thin films using optical techniques

Thin films of oxide materials are playing a growing role as critical elements in optoelectronic devices and nanoscale devices. In this work, thin films of some typical oxides such as WO₃, Ga₂O₃ and SrTiO₃ were investigated. We present measurements of those films, using various optical techniques like photoconductivity transients over a wide time range and photo-Hall measurements. Analysis of the photo-Hall and photoconductivity data permits the determination of the contribution to the photoconductivity made by the carrier mobility and concentration. A model for dispersive carrier transport was proposed to explain the relaxation of the photoconductivity in oxide thin films. In addition, photoluminescence characterization was used to study microstructures and energy band in oxide thin films. The broad emission from oxide host, consisting of several band peaks, was likely due to a recombination process with several possible paths. The dependence of the luminescent intensity on the annealing atmosphere was associated with the presence of oxygen vacancies. It is suggested that our optical analysis efforts have improved the understanding of oxide thin films, and this should lead to the necessary advancements in a variety of devices.     

微纳米加工技术在纳米物理与器件研究中的应用

物质在纳米尺度下可能呈现出与体材料不同的物理特件，这正是纳米科技发展的基础之一。要想探索在纳米尺度下材料物埋性质的变化规律及可能的应用领域，离不开相应的技术手段，微纳米加工技术作为当今高技术发展的重要技术领域之一，是实现功能人工纳米结构与器件微纳米化的基础。本文根据几个不同的应用领域，介绍了微纳米加工技术在纳米物理与器件研究领域的应用。     

Generalization of Einstein relation for doped organic semiconductors

Under the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation for electron and hole transport in doped organic semiconductor thin films are developed. Numerical calculations show that, although traditional Einstein relation still holds for low carrier concentrations, that is, the diffusion-coefficient-to-mobility ratio in units of k_BT/q, with k_B the Boltzmann’s constant, T the temperature and q the elementary charge, equals 1. But when the electron (hole) concentration is high, the diffusion-coefficient-to-mobility ratio for electrons (holes) changes strongly with the electron (hole) concentration, the doping level, the mean energy of LUMOs (HOMOs) of the dopant E_Ld (E_Hd) and the host E_L (E_H), as well as their variances. Dopants with E_Ld<E_L (E_Hd>E_H) affect the diffusion-coefficient-to-mobility ratio mainly in the range of low and middle carrier concentrations, while those with E_Ld>E_L (E_Hd<E_H) have significant effect only in the range of high carrier concentrations. It was found that there can be a maximum in the dependence of the diffusion-coefficient-to-mobility ratio on the quasi-Fermi energy or carrier concentration exist, for appropriate values of the doping level, the mean energy and variance of LUMO or HOMO states of the dopant. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

3004铝合金“反常”锯齿屈服现象的研究

在应变速率为5.56×10^-5s^-1—5.56×10^-3s^-1的范围内，在不同温度下(从223K至773K)，对3004铝合金进行系列拉伸试验，探索其锯齿屈服规律；通过激活能的计算、内耗研究、微观组织观察和能谱分析，探讨锯齿屈服的机理与物理本质.结果表明，3004铝合金在形变过程中会出现动态应变时效现象；发现了一种“反常”的锯齿屈服现象：在出现锯齿屈服的温区内，存在锯齿屈服临界应变量转变温度T_t， 关键词： 动态应变时效 锯齿屈服 铝合金 内耗     

La掺杂对Bi4Ti3O12薄膜铁电性能的影响

利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论.     

磁场对四端量子波导中电子输运性质的影响

采用模匹配方法，研究了非均匀磁场下开放的四端量子波导中的电子输运性质. 结果表明，从一端入射的电子可以透射到两个与之垂直的输出端和一个与之平行的输出端. 在没有外加磁场的情况下，两个垂直输出端的输运概率是相同的，但垂直端与水平端的输运概率不同；在外加磁场下，由于磁边缘态效应，两个垂直输出端的输运概率也有着相当大的差别. 通过施加不同的磁场，我们能获得丰富的电子输运结构，如台阶，宽谷，尖峰等；通过调节磁场的大小和比例以及结构参数可控制该量子结构在各输出端的输运概率. 关键词： 电子输运 介观体系 磁效应     

含有五边形—七边形缺陷的单壁纳米碳管的输运性质研究

运用第一性原理的密度泛函理论结合非平衡格林函数研究了含有五边形—七边形拓扑缺陷的纳米碳管异质结的输运性质.结果发现：拓扑缺陷对碳管的输运性质有很大影响；另外，不同类型的碳管形成的异质结的输运性质也有明显的差异. 关键词： 纳米碳管 输运性质 异质结 透射系数     

C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度

本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析. pn结的存在所造成的埋沟MOS结构C-V曲线的畸变为沟道载流子浓度的提取带来一些问题. SiC/SiO₂界面上界面态的存在也会使提取出的数值与实际数值产生偏差. 本文首先从理论上分别分析了沟道深度和界面态对沟道载流子浓度提取结果的影响，然后对两种沟道深度的埋沟MOS结构C-V曲线进行了测试，提取出了沟道掺杂浓度. 在测试中，采用不同的扫描速率，分析了界面态对提取结果的影响. 理论分析结果和实验测 关键词： C-V法 SiC 隐埋沟道MOSFET 沟道载流子浓度     

Spectroscopic and Structural Study of the 1：2 Aluminium（Ⅲ） Complex of Quercetin

Complex formation between aluminium and quercetin（Q） in methanol was investigated by means of 27^Al solid-state, 13^C and 1^H NMR and MS（ESI）, UV and IR spectra. Formation of the 1：2 complex was favored in methanol relative to all other solvent and the predominant species observed of Al（Ⅲ） has a 1：2 stoichiometry. The fine structure of 1：2 aluminum complex of quercetin was that the aluminum central atom chelated with two quereetin molecules and two methoxyl groups between two five membered rings, its coordination is six, the chelated site was 3-hydroxy-4-carbonyl.