初始模型对含噪动态光散射数据正则化反演结果的影响

分别采用最小模型矩阵、最平坦模型矩阵、最光滑模型矩阵作为初始化模型,对加入5种不同水平随机噪声的90 nm窄单峰、90 nm宽单峰和250 nm窄单峰、250 nm宽单峰颗粒体系的模拟分布进行了正则化反演,并对反演结果进行比较。结果表明：当噪声水平为0时,正则化初始模型的选择对反演结果没有明显影响。随着噪声水平的增加,采用三种初始化模型反演得到的峰值误差和粒度分布误差都随之变大,但采用最平坦模型和最光滑模型反演得到的峰值和粒度分布误差明显小于采用最小初始模型的反演误差。当噪声水平大于0.01时,选择最平坦初始模型获得的粒度分布结果优于采用最光滑初始模型和最小初始模型获得的结果,而采用最光滑初始模型反演得到的峰值优于最平坦初始模型和最小初始模型的反演峰值。因此,采用正则化算法处理含噪动态光散射数据时,为得到最优的粒度分布信息,宜采用最平坦初始模型,若需要获取最准确的峰值信息,则应选择最光滑初始模型。     

气体开关抖动对单模块快脉冲直线型变压器驱动源输出特性的影响

分析了快脉冲直线型变压器驱动源(FLTD)气体开关触发击穿延时的分布规律,利用MAT-LAB软件生成随机序列模拟开关击穿延时和抖动,在FLTD简化二阶电路的基础上,利用MATLAB分析了开关抖动对40个支路并联1 MA,100 ns FLTD模块输出电流脉冲前沿和幅值的影响。模拟计算结果表明:开关理想时,即抖动为0,输出电流峰值为996 kA,峰值时间为90 ns,10%~90%脉冲前沿为54 ns;开关自身抖动与开关之间分散性之和为10 ns时,输出电流脉冲前沿增加约14%,电流峰值下降约2%;开关自身抖动与开关之间分散性之和为20 ns时,输出电流脉冲前沿增加约38%,电流峰值下降约5%。     

第一原理研究界面弛豫对InAs/GaSb超晶格界面结构、能带结构和光学性质的影响

通过广义梯度近似的第一原理全电子相对论计算, 研究了不同界面类型InAs/GaSb超晶格的界面结构、电子和光吸收特性. 由于四原子界面的复杂性和低对称性, 通过对InAs/GaSb超晶格进行电子总能量和应力最小化来确定弛豫界面的结构参数. 计算了InSb, GaAs型界面和非特殊界面(二者交替)超晶格的能带结构和光吸收谱, 考察了超晶格界面层原子发生弛豫的影响.为了证实能带结构的计算结果, 用局域密度近似和Hartree-Fock泛函的平面波方法进行了计算. 对不同界面类型InAs/GaSb超晶格的能带结构计算结果进行了比较, 发现界面Sb原子的化学键和离子性对InAs/GaSb超晶格的界面结构、 能带结构和光学特性起着至关重要的作用.     

梯形截面硅基水平多槽纳米线定向耦合器全矢量分析

定向耦合器是构成各类光子器件的基础元件. 本文采用一种基于电场分量的全矢量有限元法, 分析由梯形截面硅基水平多槽纳米线构成的定向耦合器. 给出了准TE与准TM偶、奇模有效折射率、耦合长度及模场分布, 揭示了其模式的混合特性及模场分布特点. 分析结果表明, 准TE模与准TM模的耦合长度随波导间距的增大均呈指数增长, 其中准TE模的耦合长度对波导侧壁倾角的变化敏感, 而准TM模的耦合长度对槽厚及槽折射率的变化敏感. 恰当选择结构与材料参数, 可实现两偏振态下相同耦合长度, 定向耦合器在偏振无关条件下工作.     

Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO2 dilute magnetic semiconductors

According to density functional theory （DFT） using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy （Vo） in a （Ti,Co）06 distorted octahedron on the spin density and magnetic properties of Co-doped rutile Ti02 dilute magnetic semiconductors. Our calculations suggest that the Vo location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the Vo is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d6（t3g↑, t23g ↓） without any magnetic moment. However, if the Vo is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of Vo. Some positive spin polarization is induced around the adjacent O ions.     

Effect of initial-state target polarization on single ionization of helium by 1-keV electron impact

We report new results of triple differential cross sections for the single ionization of helium by 1-KeV electron impact at the ejection energy of 10 eV. Investigations have been made for both the perpendicular plane and the plane perpendicular to the momentum transfer geometries. The present calculation is based on the three-Coulomb wave function. Here we have also incorporated the effect of target polarization in the initial state. A comparison is made between the present calculation with the results of other theoretical methods and a recent experiment [D黵r M, Dimopoulou C, Najjari B, Dorn A, Bartschat K, Bray I, Fursa D V, Chen Z, Madison D H and Ullrich J 2008 Phys. Rev. A 77 032717]. At an impact energy of 1 KeV, the target polarization is found to induce a substantial change of the cross section for the ionization process. We observe that the effect of target polarization plays a dominant role in deciding the shape of triple differential cross sections.     

Effect of oxyfluorination on gas sensing behavior of polyaniline-coated multi-walled carbon nanotubes

Polyaniline-coated multi-walled carbon nanotubes were prepared by in situ chemical polymerization method for the novel sensing materials of ammonia gas. The thickness of the polyaniline coatings was controlled by the oxyfluorination treatment on the multi-walled carbon nanotubes. The oxyfluorination with higher oxygen content produced the more hydrophilic functional groups on the surface of multi-walled carbon nanotubes. Both the resistivity change and the response time were significantly improved with high repeatability using the more hydrophilic multi-walled carbon nanotubes which were modified with oxyfluorination.     

High-temperature dielectric properties of Gd2CuO4 ceramics

A sample of Gd₂CuO₄ (GCO) has been prepared through the solid state reaction technique. Dielectric properties of this material have been measured in detail as functions of temperature (between 285 and 450 K) and frequency (20 Hz-10 MHz). A step-like increase below 330 K and a broad peak around 360 K were observed in the real part of the permittivity (ε′) which were found to be originated from the oxygen vacancy hopping motions that cause a dipolar relaxation, followed by a Maxwell-Wagner relaxation as the hopping carriers are blocked by the interfaces and surfaces of the sample.     

Electronic properties of anatase TiO2 doped by lanthanides: A DFT+U study

The effects of mono-doping of 4f lanthanides with and without oxygen vacancy defect on the electronic structures of anatase TiO₂ have been studied by first-principles calculations with DFT+U (DFT with Hubbard U correction) to treat the strong correlation of Ti 3d electrons and lanthanides 4f electrons. Our results revealed that dopant Ce is easy to incorporate into the TiO₂ host by substituting Ti due to its lower substitutional energy (∼−2.0 eV), but the band gap of the system almost keeps intact after doping. The Ce 4f states are located at the bottom of conduction band, which mainly originates from Ti 3d states. The magnetic moment of doped Ce disappears due to electron transfer from Ce to the nearest O atoms. For Pr and Gd doping, their substitutional energies are similar and close to zero, indicating that both of them may also incorporate into the TiO₂ host. For Pr doping, some 4f spin-down states are located next to the bottom of the conduction band and narrow the band gap of the doping system. However, for Gd doping, the 4f states are located in deep valence band and there is no intermediate band in the band gap. The magnetic moment of dopant Gd is close to the value of isolated Gd atom (∼7 μB), indicating no overlapping between Gd 4f with other orbitals. For Eu, it is hard to incorporate into the TiO₂ host due to its very higher substitutional energy. The results also indicated that oxygen vacancy defect may enhance the adsorption of the visible light in Ln-doped TiO₂ system.