THE QUANTUM CORRECTIONS ON THE THEORY OF TRANSITION RADIATION

A Scheme of quantum treatment for transition radiation is proposed. The Fresnel coefficients are adopted to describe the stationary states of electromagnetic fields near the interface between two mediums before a canonical field quantization procedure can be performed. Then an usual perturbation approach in field theory leads to the general expressions of radiation intensity in two different polarizations. The second order quantum corrections are ascribed to the existence of electron spin. Some concrete formulas for the cases of electron or monopole acrossing a metal surface are presented as well.

     

双钙态矿Sr_2Fe_(1-x)Mn_xMoO_6体系的磁性和磁输运性质的研究(英文)

我们用X射线光电子能谱、以及相关的电性和磁性测量研究了Sr2Fe1-xMnxMoO6(0相似文献   

限制性核酸内切酶PstⅠ星号活力的研究

研究了温度、酶浓度、反应时间、几种有机溶剂等因素对PstⅠ星号活力的影响,并在有利于星号活力的反应条件下测定了星号活力及原活力的Km 分别为1.46×10- 7 m ol/L和1.02×10- 8 m ol/L,Vm ax 分别为2.86×10- 16 m ol/s和3.06×10- 15 m ol/s.     

敬钊毒素-V剪切体Y1-JZTX-V的化学合成与氧化复性及其钠通道活性鉴定

应用芴甲氧羰基(Fmoc)固相方法化学合成了敬钊毒素-V（JZTX-V）分子N-端酪氨酸残基剪切体(Y1-JZTX-V),并且通过反相高效液相色谱和质谱对不同条件下的氧化复性结果进行监测,从而得到该剪切体的最佳氧化复性条件:0.1 mol/L Tris-HCl缓冲液、pH 7.50、1 mmol/L还原型谷胱甘肽(GSH)、0.1 mmol/L氧化型谷胱甘肽(GSSG)、样品浓度为0.05 mg/L、复性温度为4 ℃。膜片钳电生理实验结果显示敬钊毒素-V剪切体Y1-JZTX-V对大鼠背根神经节(DRG)细胞上表达的河豚毒素不敏感型(TTX-R)与河豚毒素敏感型(TTX-S)钠电流均有抑制作用,其半数抑制浓度(IC50)分别为(160±2.5) nmol/L和(39.6±3.2) nmol/L。与天然的敬钊毒素-V相比,该剪切体对大鼠DRG细胞上的TTX-S钠电流的抑制作用基本一致,但对TTX-R钠电流的抑制作用却大大降低,表明敬钊毒素-V分子N-端的酪氨酸残基是一个与TTX-R钠通道结合活性相关的氨基酸残基。     

层状锑磷酸嵌接式卟啉锰制备与模拟细胞色素氧化催化研究

层状锑磷酸嵌接式卟啉锰制备与模拟细胞色素氧化催化研究胡希明，皮宗新，梅治乾，古国榜，黄仲涛（华南理工大学应用化学系，华南理工大学化学工程系，广州，５１０６４１）关键词卟啉锰，层状锑磷酸，嵌接，催化性能细胞色素Ｐ４５０是一种含血红素的单充氧化酶，在室温...     

注射用生物可降解胰岛素纳米微球的制备

共聚物;药剂释放体系;注射用生物可降解胰岛素纳米微球的制备     

带强迫项高阶中立型微分方程的振动性和非振动性

我们给出一类强迫高阶非线性中立型时滞微分方程一切解振动的充分条件.而且,也研究了一类强迫一阶中立型方程非振动解的渐近性.     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

Analysis of Low-polar Ginsenosides in Steamed Panax Ginseng at High-temperature by HPLC-ESI-MS/MS

A high performance liquid chromatography coupled with electrospray ionization-tandem mass spectrometry( HPLC-ESI-MS/MS) method was developed for the analysis and identification of ginsenosides in the extracts of raw Panax ginseng(RPG) and steamed Panax ginseng at high temperatures(SPGHT). A total of 25 ginsenosides were extracted include of which 10 low-polar ginsenosides, such as ginsenosides F4, Rk3, Rh4, 20S-Rg3, 20R-Rg3 and so on, were identified according to their HPLC retention time and MS/MS data. The results indicated that the low polar ginsenosides were seldom found in RPG. For the exploration of the transformation pattern of the ginsenosides in steam processing, the standards of ginsenosides Re, Rg1, Rb1, Rc, Rb2, Rb3 and Rd were selected and hydrolyzed at a temperature of 120 ℃. The results show that these polar ginsenosides can be converted to low-polar ginsenosides such as Rg2, Rg6, F4, Rk3 and Rg5 by hydrolyzing the sugar chains.     

PH_3配体在团簇Au_(20)的顶点和面心配位的DFT理论研究

采用DFT方法研究了在团簇Au20的顶端位点和面心位点配位PH3分子时的几何结构、电子结构以及Au-P的成键机理和能量分析.在两种配位方式下,配体PH3对团簇的几何结构影响都表现为强烈的局域形变效应.不同的配位方式下PH3与团簇的轨道作用方式不同,所形成的团簇化合物电子组态不同.两种配位方式下Au-P成键能的区别主要是来自于配体与团簇之间的Pauli排斥的不同,在面心配位时配体与团簇之间更大的Pauli排斥作用导致了该配位方式的不稳定.