BOUND POLARONS IN ASYMMETRIC QUANTUM WELLS IN AN ELECTRIC FIELD

We have proposed the Hamiltonian of a polaron bound to a donor impurity in semiconductor quantum wells (QWs) in the presence of an electric field. The couplings of an electron with the confined bulk like longitudinal optical (L₀) phonons, halfspace L₀ phonons and interface phonons are considered. In particular, the interaction of the impurity with the various phonon modes is also included. We have calculated the ionization energy of a bound polaron in Al_xl Ga_1-xl As/GaAs/Al_xr Ga_1-xr As asymmetric and symmetric QWs. Results are obtained as a function of the barrier height (or equivalently of Al concentration x),the well width, the electric field intensities and the position of impurity in the QWs. Our numerical calculations show clearly that the interaction between the impurity and the phonon field plays an important role in screening the Coulomb interaction. It is shown that for at hin well (＜12nm), the cumulative effects of the electronphonon coupling and the impurityphonon coupling can contribute appreciably to the donor ionization energy and polarizability.     

MODELING AND SCALING OF CHIELECTRIC RELAXATION OF NONLINEAR OPTICAL POLYMERS IN FREQUENCY DOMAIN

chielectric relaxation theory was demonstrated, chielectric relaxation that selectively probes chromophore reorientation in the frequency domain was described by the Havriliak Negami(HN) function, chielectric spectra of several nonlinear optical (NLO) polymers were fitted well by the HN function. To describe the scaling of chromophore reorientation relaxation in frequency domain, two-shape parameters m and n describing the low- and high- frequency wings of the chielectric spectra need to be specified, besides the chielectric characteristic relaxation time τ and the chielectric strength Δχ⁽²⁾. From the temperature dependences of m and n of NLO polymers, the relations between the chromophore relaxation and the a relaxation of the polymer host have been revealed.     

A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2

Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH₃CSNH₂. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing.     

清代红绿彩瓷器无损分析研究

红绿彩瓷器是我国陶瓷史上一种重要的釉上彩瓷器,分析其彩料的化学组成和物相结构对其烧制工艺的研究有很重要的意义.但由于瓷器表面的不平整和彩料分布的不均匀性,导致其不满足传统的1 mm×10 m m线光源的X射线衍射仪对样品的测试要求.而毛细管聚焦的X射线衍射仪采用点光源的方式照射样品,毛细管X光透镜对Cu-Kα 的能量有...     

矩形大口径激光光束质量评价光学系统设计

自适应光学校正技术可有效提升固体板条激光器的光束质量,但随着激光器输出功率的提升,输出光束口径逐渐增加,系统体积逐渐增大,自适应光学校正系统的设计难度也增加了.因此,在满足自适应光学校正系统中共轭探测等需求的前提下,统筹优化系统的尺寸参数,同时实现波前相位、光束质量评估等多参数的检测具有一定的研究意义.本文在系统整体尺...     

基于碳纳米薄膜/砷化镓范德华异质结的高性能自驱动光电探测器研究

基于碳纳米材料/体半导体范德华(vdW)异质结的光电器件可以同时实现碳纳米材料的超高载流子迁移率以及体半导体的优异光电性能,且具有结构简单、工艺简便、易于调控界面等优点.尤其是通过调控单壁碳纳米管(SWCNT)的直径/手性、费米能级等可以与体半导体形成能带匹配、具有原子级界面的新型混合维度vdW异质结.本文报道了一种基...     

4~20 K 温区固体界面导热填料接触热阻实验研究

超导量子干涉仪、 超导光子探测器等深空探测器需要液氦温区制冷技术提供极低温温度, 固体界面接触热阻的存在会增大耦合界面温度差, 进而增加制冷机系统冷损. 为定量探究4~20 K 深低温区固体接触热阻, 采用GM 作为冷源, 设计了一台可同时调节压力和低温温度的固体界面接触热阻测试实验台. 利用感压纸进行接触界面压力校核, 并对温度重复性进行验证. 实验测试了不同导热介质填充情况下, 温度和压力变化时固体接触热阻的变化规律. 基于最小二乘法对实验数据进行半经验公式拟合, 获得4 ~20 K 温区不同压力加载条件下的接触热阻的定量参考.     

SmCo5矫顽力与相变研究

用正电子湮没技术、1000kV超高压电子显微镜结合磁测量研究了SmCo₅永磁合金在回火中相析出和矫顽力机制。得出:从SmCo₅析出的Sm₂Co₁₇相本身不是反磁化形核中心,析出的Sm₂Co₁₇相中存在的某些多缺陷区域可以具有很低的磁各向异性,从而成为反磁化形核中心,使内禀矫顽力下降。实验中发现:SmCo₅从25℃到900℃回火,750℃出现最大磁不可逆损失。各种近邻Sm³⁺分布的中心Sm³⁺的磁各向异性随温度变化,越接近Sm₂Co₁₇结构,Sm³⁺为负磁各向异性的可能性越大。 关键词：     

高压烧结法合成致密纳米BaTiO3陶瓷结构和铁电性能研究

 在6 GPa压力、1 000 ℃温度条件下制备了致密的纳米BaTiO₃陶瓷，合成样品的平均晶粒尺寸为50 nm，理论密度在97%以上。通过介电测量，观察到了样品宽化的相变峰，它与粗晶陶瓷的相变峰大不相同。由于90°电畴的减少和退极化场的存在，观察到了细长的电滞回线，它是样品铁电性存在的有力证据，表明钛酸钡陶瓷的临界尺寸在50 nm以下。