A tight-binding study of LUMO states in ellipsoidal silicon nanocrystals

In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.     

Semiempirical calculation of the fine structure of the indium ion

The fine-structure parameters of a series of configurations of the first ion of indium and the gyromagnetic ratios in intermediate coupling are calculated by a semiempirical method in the single-configuration approximation.     

Rotational analysis ofA 1Π-X 1Σ+ bands of P14N and P15N: Perturbatio studies in theA 1Π state

The ultraviolet band systemsA ¹Π-X ¹Σ⁺ of P¹⁴N and P¹⁵N were excited in an electrodeless tube containing traces of phosphorus specpure nitrogen and neon using a microwave discharge (2450 MHz). Bands of the isotopic species, P¹⁵N, were obtained using¹⁵N₂ enriched to 95.5%. Rotational analyses of eleven bands of P¹⁴N and sixteen bands of P¹⁵N were carried out. Three perturbing statese ³Σ⁻,d ³Δ andb ³Π, arising from the lower valence configurations were identified from the observed perturbations in thev′=0–4 levels of theA ¹Π state. Deperturbation studies led to the determination of molecular constants of the perturbing states. Vibrational assignments of the perturbing states were made from isotope shift studies.     

Pattern formation on a nonlinear periodic electrical network

It is observed experimentally that a periodic array of resistively coupled LC-oscillators with ans-shaped nonlinearity exhibits stable non-uniform voltage and current distributions. The dependence of the resulting structure on the coupling resistance and the boundary conditions is investigated. The structure is rather insensitive to variations of the boundary values. The experiments are well described by a two-variable reaction-diffusion equation.     

Nuclear superstructure {1/2, 0, 1/2} of an La<Subscript>0.93</Subscript>Sr<Subscript>0.07</Subscript>MnO<Subscript>3</Subscript> manganite orthorhombic crystal

The {1/2, 0, 1/2} nuclear superstructure in an La_0.93Sr_0.07MnO₃ manganite orthorhombic crystal is revealed using thermal-neutron diffraction. It is demonstrated that this superlattice belongs to the class of distortion-type structures and is directly associated with a 1/16-type ordering of Mn⁴⁺ and Mn³⁺ ions in a collinear ferromagnetic phase of the La_0.93Sr_0.07MnO₃ manganite.     

Computing Zeta Functions of Kummer Curves via Multiplicative Characters

We present a practical polynomial-time algorithm for computing the zeta function of a Kummer curve over a finite field of small characteristic. Such algorithms have recently been obtained using a method of Kedlaya based upon Monsky–Washnitzer cohomology, and are of interest in cryptography. We take a different approach. The problem is reduced to that of computing the L-function of a multiplicative character sum. This latter task is achieved via a cohomological formula based upon the work of Dwork and Reich. We show, however, that our method and that of Kedlaya are very closely related.Dedicated to the memory of Gian-Carlo Rota     

The study of the influence of uniaxial stress on impurity complexes in silicon

The influence of external uniaxial stress on the different indium-donor complexes in silicon has been studied using the perturbed γ –γ angular correlation (PAC) method. Such effect of an applied stress is detected by means of the probe atoms situated at different complexes in the sample. The current results showed that the responses of the probes in an extrinsic silicon samples are found to be dissimilar for the same value of stress. Such change in the local environments of the probe atoms could be associated with the various strain field created by the implantations of varied size of impurities. The phosphorous implantation in silicon has even lead to the complete absence of observable effect of the applied stress suggesting significant lose of the elasticity of the sample.