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81.
Connectivity correlations in three topological spaces of urban bus-transport networks in China 下载免费PDF全文
In this paper, an empirical investigation is presented, which focuses on unveiling the universality of connectivity correlations in three spaces (the route space, the stop geographical space and bus-transferring space) of urban bustransport networks (BTNs) in four major cities of China. The underlying features of the connectivity correlations are shown in two statistical ways. One is the correlation between the (weighted) average degree of all the nearest neighbouring vertices with degree k, (Knn^w,(k)) Knn(k), and k, and the other is the correlations between the assortativity coefficient r and, respectively, the network size N, the network diameter D, the averaged clustering coefficient C, and the averaged distance (l). The obtained results show qualitatively the same connectivity correlations of all the considered cities under all the three spaces. 相似文献
82.
Multiferroic NiFe2O4 (NFO)-BaTiO3 (BTO) bilayered thin films are epitaxially grown on (001) Nb-doped SrTiO3 (STO) substrates by pulsed-laser deposition (PLD). Different growth sequences of NFO and BTO on the substrate yield two kinds of epitaxial heterostructures with (001)-orientation, i.e. (001)-NFO/(001)-BTO/substrate and (001)- BTO/(001)-NFO/substrate. Microstructure studies from x-ray diffraction (XRD) and electron microscopies show differences between these two heterostructures, which result in different multiferroic behaviours. The heterostructured composite films exhibit good coexistence of both ferroelectric and ferromagnetic properties, in particular, obvious magnetoelectric (ME) effect on coupling response. 相似文献
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84.
The value of intrinsic chlorophyll fluorescence polarization, and the intensity in emission spectrum were investigated in
leaf segments of Alocasia macrorrhiza under several stress conditions including different temperatures (25–50°C), various concentrations of NaCl (0–250 mM), methyl
viologen (MV, 0–25 μM), SDS (0–1.0%) and NaHSO3 (0–80 μM). Fluorescence emission spectrum of leaves at wavelength regions of 500–800 nm was monitored by excitation at 436 nm.
The value of fluorescence polarization (P value), as result of energy transfer and mutual orientation between chlorophyll molecules, was determined by excitation at
436 nm and emission at 685 nm. The results showed that elevated temperature and concentrations of salt (NaCl), photooxidant
(MV), surfactant (SDS) and simulated SO2 (NaHSO3) treatments all induced a reduction of fluorescence polarization to various degrees. However, alteration of the fluorescence
spectrum and emission intensity of F685 and F731 depended on the individual treatment. Increase in temperature and concentration of NaHSO3 enhanced fluorescence intensity mainly at F685, while an increase in MV concentration led to a decrease at both F685 and F731. On the contrary, NaCl and SDS did not cause remarkable change in fluorescence spectrum. Among different treatments, the
negative correlation between polarization and fluorescence intensity was found with NaHSO3 treatments only. We concluded that P value being measured with intrinsic chlorophyll fluorescence as probe in leaves is a susceptible indicator responding to
changes in environmental conditions. The alteration of P value and fluorescence intensity might not always be shown a functional relation pattern. The possible reasons of differed
response to various treatments were discussed. 相似文献
85.
Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures 下载免费PDF全文
By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related. 相似文献
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87.
Within the framework of the dinuclear system model, the production of superheavy element Z = 117 in possible projectile-target combinations is analysed systematically. The calculated results show that the production cross sections are strongly dependent on the reaction systems. Optimal combinations, corresponding excitation energies and evaporation channels are proposed, such as the isotopes^248.249 Bk in ^48 Ca induced reactions in 3n evaporation channels and the reactions ^45Sc+246.248Cm in 3n and 4n channels, and the system ^51 V+ 244pu in 3n channel. 相似文献
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提出了一种新型十字环型左手材料结构单元.该结构只需在介质板单侧蚀刻, 即可在二维方向上产生等效负介电常数和等效负磁导率.通过理论分析, 提出场-路结合的等效源分析法以计算等效介电常数、磁导率, 并据此对十字环型结构单元的左手特性激发机理进行了论证. 后采用Nicolson-Ross-Weir 等效参数法提取了十字环型单元阵列的相对介电常数和相对磁导率, 并通过棱镜实验对材料的负折射特性进行了验证.实验表明, 该左手材料在6.8-6.9 GHz频段具有二维入射左手特性. 此种左手材料制作工艺相对简单, 为左手材料在微波器件领域的应用提供了一种较为实用的设计方案. 相似文献