Scanning tunneling microscopy and surface simulation of zinc-blende GaN(001) intrinsic 4x reconstruction: linear gallium tetramers?

Scanning tunneling microscopy images confirm electron diffraction studies that the zinc-blende GaN(001)-4x reconstruction consists of rows aligned along [110] with a spacing along [110] of 4a. Dual-bias imaging shows a 180 degree shift of the corrugation maximum position between the profiles of empty and occupied states, in agreement with surface simulations based on the 4 x 1 linear tetramer model of Neugebauer et al. [Phys. Rev. Lett. 80, 3097 (1998)]. Electronic structure calculations predict a surface band gap of 1.1 eV, close to the measured value of 1.14 eV and the previously predicted value (1.2 eV). Despite the successes of this model, high-resolution images reveal an unexpected 3x periodicity (not seen in diffraction) along the [110] row direction, indicating the need for a 4 x 3 model, and putting into question the existence of linear Ga tetramers.     

Localization of elastic waves in heterogeneous media with off-diagonal disorder and long-range correlations

Using the Martin-Siggia-Rose method, we study propagation of acoustic waves in strongly heterogeneous media which are characterized by a broad distribution of the elastic constants. Gaussian-white distributed elastic constants, as well as those with long-range correlations with nondecaying power-law correlation functions, are considered. The study is motivated in part by a recent discovery that the elastic moduli of rock at large length scales may be characterized by long-range power-law correlation functions. Depending on the disorder, the renormalization group (RG) flows exhibit a transition to localized regime in any dimension. We have numerically checked the RG results using the transfer-matrix method and direct numerical simulations for one- and two-dimensional systems, respectively.     

Dynamic characteristics of nanoindentation in Ni:A molecular dynamics simulation study

In this work,three-dimensional molecular dynamics simulation is carried out to elucidate the nanoindentation behaviour of single crystal Ni.The substrate indenter system is modelled using hybrid interatomic potentials including the manybody potential(embedded atom method) and two-body Morse potential.The spherical indenter is chosen,and the simulation is performed for different loading rates from 10 m/s to 200 m/s.Results show that the maximum indentation load and hardness of the system increase with the increase of velocity.The effect of indenter size on the nanoindentation response is also analysed.It is found that the maximum indentation load is higher for the large indenter whereas the hardness is higher for the smaller indenter.Dynamic nanoindentation is carried out to investigate the behaviour of Ni substrate to multiple loading-unloading cycles.It is observed from the results that the increase in the number of loading unloading cycles reduces the maximum load and hardness of the Ni substrate.This is attributed to the decrease in recovery force due to defects and dislocations produced after each indentation cycle.     

Double image encryption by using Arnold transform and discrete fractional angular transform

Based on Arnold transform and discrete fractional angular transform, a double image encryption algorithm is designed. Two original images are regarded as the amplitude and phase of a complex function. Arnold transform is introduced for scrambling the pixels at a local area of the complex function. Subsequently the changed complex function is converted by discrete fractional angular transform. The operations mentioned will be performed many times. The amplitude of final output complex function is the encrypted image and its phase is regarded as the key of encryption algorithm. The parameters of the two transforms serve as the additional keys for enhancing the security. Some numerical simulations have been done to validate the performance of this encryption scheme.     

Pathwise rate- stability for input-output processes

An input-output processZ = {Z(t), t 0} is said to be-rate stable ifZ(t) = o((t)) for some non-negative function(t). We prove that the processZ is -rate stable under weak conditions that include the assumption that input satisfies a linear burstiness condition and Z is asymptotically average stable. In many cases of interest, the conditions for-rate-stability can be verified from input data. For example, using input information, we establish-rate stability of the workload for multiserver queues, an ATM multiplexer, and-rate stability of queue-length processes for infinite server queues.     

Characterization of small-signal intensity modulation of single-mode fiber grating Fabry-Perot laser source

A comprehensive study on the small-signal intensity modulation (IM) characteristics of a fiber grating Fabry-Perot (FGFP) laser is numerically investigated. The effect of external optical feedback (OFB), temperature, injection current, cavity volume, nonlinear gain compression factor, and fiber grating (FG) parameters on IM characteristics are presented. The temperature dependence (TD) of IM is calculated according to the TD of laser cavity parameters instead of using the well-known Parkove relationship. It has been shown that the optimum external fiber length (L _ext) is 3.1 cm. The optimum range of working temperature for FGFP laser is between 23 to 27 °C. We also show that by increasing the laser injection current from 10 to 60 mA, the IM peak amplitude decreased from 6.3 to 0.2 dB and the relaxation-oscillation frequency (ROF) is shifted from 1.2 GHz towards higher frequency of 5.48 GHz. In addition, the AR coating reflectivity and gain compression factor have no significant effect on the IM. The study indicates that a stable operation and excellent modulation characteristic can be obtained after optimization process.     

Direct current and impedance spectroscopic studies on MoO3 modified ZnPc/ITO Schottky diodes

We use experimental results of direct current and low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor ZnPc. The experimental results demonstrate an increase in current and holes mobility by the introduction of a thin MoO₃ film at the ITO/ZnPc interface. This significantly improves the device performance. The improvement is explained in terms of the reduction in the effective barrier for charge transfer from ZnPc to ITO.     

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode

The reported work has been focused on the improvement of electrical parameters of Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel Schottky barrier diodes were fabricated on 50 μm epitaxial layer of n-type 4H-SiC (0 0 0 1) substrate. The values of leakage current, Schottky barrier height (?_B), ideality factor (η) and density of interface states (N_SS) were obtained from experimentally measured current–voltage (I–V) and capacitance–voltage (C–V) characteristics before and after vacuum annealing treatment. The data revealed that ?_B, η and reverse leakage current for the as-processed diodes are 1.25 eV, 1.6 and 1.2 nA (at ?100 V), respectively, while for vacuum annealed diodes these parameters are 1.36 eV, 1.3 and 900 pA (at same reverse voltage). Improved characteristics have been resulted under the influence of vacuum annealing because of lesser number of minority carrier generation due to incessant reduction of number of available discrete energy levels in the bandgap of 4H-SiC substrate and lesser number of interface states density at Ni/4H-SiC (0 0 0 1) interface.