Fabrication and characterization of zinc oxide anti-reflective coating on flexible thin film microcrystalline silicon solar cell

This paper studies the fabrication and characterization of 80 nm zinc oxide anti-reflective coating (ARC) on flexible 1.3 μm thin film microcrystalline silicon (μc-Si) solar cell. High resolution X-ray diffraction (HR-XRD) shows a c-axis oriented ZnO (0 0 2) peak (hexagonal crystal structure) at 34.3° with full width at half maximum (FWHM) of 0.3936°. Atomic force microscope (AFM) measures high surface roughness root-mean-square (RMS) of the layer (50.76 nm) which suggests scattering of the incident light at the front surface of the solar cell. UV–vis spectrophotometer illustrates that ZnO ARC has optical transmittance of more than 80% in the visible and infra-red (IR) regions and corresponds to band gap (E_g) of 3.3 eV as derived from Tauc equation. Inclusion of ZnO ARC successfully suppresses surface reflectance from the cell to 2% (at 600 nm) due to refractive index grading between the Si and the ZnO besides quarter-wavelength (λ/4) destructive interference effect. The reduced reflectance and effective scattering effect of the incident light at the front side of the cell are believed to be the reasons why short-circuit current (I_sc) and efficiency (η) of the cell improve.     

Two-photon revival-collapse phenomenon in the evolution of the quadrature squeezing of the four-photon Jaynes-Cummings model

We prove that the revival-collapse phenomenon occurring in the atomic inversion of the two-photon Jaynes-Cummings model, when the mode is initially prepared in the coherent state and the atom is in the excited state, can be obtained from the evolution of the quadrature squeezing of the four-photon Jaynes-Cummings model.     

Multifunctional ToF-SIMS: combinatorial mapping of gradient energy substrates

We present a simple method for chemical modification of chlorosilane self-assembled monolayers (SAMs) on Si surfaces by exposure to a gradient of UV-ozone radiation to create stable substrates with a range of contact angles (θ_H2O≈5–95°) and surface energies on a single substrate. These gradient energy substrates are developed to potentially generate libraries for combinatorial studies of thin film phenomenology, where a systematic variation of interfacial surface energy represents one of the significant parameters along one axis. The graded oxidation process presents a systematic variation of surface chemical composition. We have utilized contact angle measurements and time-of-flight secondary ion mass spectrometry (ToF-SIMS) to investigate this variation for a series of ions, among which are SiCH₃⁺, SiOH⁺ and COOH⁻. We show that the macroscopic measurements of surface free energy/contact angle correlate with the detailed analysis of surface chemistry (as assessed by ToF-SIMS) on these test substrates.     

Fluctuation study of pionisation in ultrarelativistic nucleus-nucleus interaction

The scaled factorial moments and the multifractal moments have been investigated in differentη-intervals to study the dynamical fluctuation of pions produced in 200 AGeV³²S-Ag/Br interaction. In order to investigate the detail characteristics of intermittency behaviour, theF-moments are extracted up to the eighth order of moments in differentM-intervals. The analysis indicates a non-thermal phase transition and different regime of particle production during the hadronisation process.     

Electrical and optical characteristics of porous silicon impregnated with LaF3 by a novel chemical bath technique

The structural, electrical and optical characteristics of porous silicon (PS) due to the impregnation of LaF₃ into PS by a novel chemical-bath deposition (CBD) technique have been investigated in this article. Without removing the PS from the anodization chamber the impregnation with LaF₃ has been done by reacting LaCl₃ with HF in the same chamber at room temperature. The impregnation of LaF₃ was confirmed by the SEM on the cross-section of the LaF₃/PS/Si system and EDX. The modification of PS surface by LaF₃ had direct influence on the electrical and optical properties of PS. Electrical properties of Ag/LaF₃/PS/p-Si/Ag structures were studied through the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Formation of metal-insulator-semiconductor (MIS) diode was evident whose forward current increased with annealing. A diode factor of about 2.4 has been obtained for the annealed heterostructure indicating a high density of trap states. The C⁻²-V curves of all samples showed negative flat band voltage of around −2 V confirming a large number of fixed positive charges in the LaF₃. The photoluminescence (PL) intensity of the LaF₃-impregnated PS showed aging for the as-deposited samples, but when annealed PS structure recovered the PL intensity. Experimental results show that the optimized chemical bath passivation process for the LaF₃ on porous silicon could enable the porous silicon to be an important material for photonic application.     

Mathematical modeling of TE CO2 laser with SF6 as a saturable absorber

A mathematical model describing the dynamic emission of a single mode TE CO₂ laser with saturable absorber has been adapted. A six-temperature model has been used to describe the amplifying medium, while a four-coupled energy level is used to describe the selective absorbing medium. The suggested mathematical model allows the investigation of the effects of the intracavity absorber on the mode characteristics of the TE CO₂ laser and, moreover, the study of the effect of the laser input parameters on the output laser pulse. The model simulates the passive Q-switch in both low- and high-pressure cases in the absorbing medium.

In addition, numerical solutions of a non-linear rate equation system of the suggested model are quantitatively discussed. The solutions describe the photon number density, the population inversion and the energy transfer processes of amplifying and absorbing media.     

Surfactant effect on the conductivity behavior of CsH2PO4: Characterization by electrochemical impedance spectroscopy

Cesium dihydrogen phosphate (CDP) nanoparticles were synthesized using the surfactants cetyltrimethyl ammonium bromide (CTAB), polyoxyethylene-polyoxypropylene (F-68) and (F-68:CTAB) with molar ratio 0.06. The samples conductivity such as CDP_CTAB, CDP_F-68 and CDP_{(F-68:CTAB)0.06} was studied by impedance spectroscopy in the frequency range 0.01 Hz to 1 MHz. The Nyquist plots were drawn at different temperatures of 210, 230 and 260 °C, which are defined below transition, phase transition and above transition, respectively. The measured conductivities obey the Arrhenius relation. The influence of surfactants on conductivity are more significant at higher temperature due to grain boundary. The conductivity of CDP_CTAB increased slightly with increasing temperature to 260 °C, whereas the conductivity of other samples decreased with increasing temperature over 230 °C. The results indicated that the conductivities increase in the order of CDP_CTAB>CDP_{(F-68:CTAB)0.06}>CDP_F-68. These are in accordance to the ion exchange capacities of the samples that the surfactant shows a direct influence on the samples proton mobility. It is found that the conductivity of CsH₂PO₄ is influenced by surfactant type.     

Gas by-products of CF3I under AC partial discharge

This paper presents the decomposition by-products of trifluro-iodo-methane and their relative proportions in the gas phase under the occurrence of partial discharge. The experiment was performed in the presence of water vapor from 250 to 400 ppm under a non-uniform electric field configuration. The experimental results reveal that the by-products of C₂F₆, C₂F₄, C₂F₅I with the amount of 1300, 200, and 55 (CH₃I) ppm, respectively, were produced for a cumulative charge of 161 mC. Other by-products, such as C₃F₈, CHF₃, C₃F₆ CH₃I were obtained at less than 30 ppm C₂F₆ was the dominant gas by-product of trifluro-iodo-methane suffering partial discharge.     

Varying Track Etch Rates along the Fission Fragments＇ Trajectories in CR-39 Detectors

We determine the behavior of track etch rate VT along the tracks in CR-39 detectors exposed to fission fragments from ^252Cf source. CR-39 detectors are etched at 70℃ in different concentrations of Na2COa-mixed 6M NaOH solutions for different etching time intervals of 5-10min starting from 15 min up to 210min. Two values of track etch rate are determined along the fission fragment trajectories. The variation in VT is correlated with the energy loss rate of the fission fragment in the detector material.