首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   6855篇
  免费   993篇
  国内免费   553篇
化学   4816篇
晶体学   32篇
力学   364篇
综合类   16篇
数学   789篇
物理学   2384篇
  2024年   22篇
  2023年   151篇
  2022年   214篇
  2021年   285篇
  2020年   284篇
  2019年   239篇
  2018年   225篇
  2017年   177篇
  2016年   297篇
  2015年   285篇
  2014年   375篇
  2013年   455篇
  2012年   605篇
  2011年   621篇
  2010年   416篇
  2009年   351篇
  2008年   423篇
  2007年   373篇
  2006年   349篇
  2005年   269篇
  2004年   201篇
  2003年   158篇
  2002年   129篇
  2001年   132篇
  2000年   125篇
  1999年   136篇
  1998年   107篇
  1997年   94篇
  1996年   124篇
  1995年   107篇
  1994年   70篇
  1993年   65篇
  1992年   70篇
  1991年   57篇
  1990年   74篇
  1989年   54篇
  1988年   36篇
  1987年   29篇
  1986年   24篇
  1985年   18篇
  1984年   16篇
  1983年   16篇
  1982年   15篇
  1981年   10篇
  1979年   20篇
  1978年   15篇
  1977年   14篇
  1976年   10篇
  1975年   13篇
  1973年   13篇
排序方式: 共有8401条查询结果,搜索用时 11 毫秒
41.
用第一性原理基础上的超软赝势方法的总能计算,研究了3d过渡金属(Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn)在Pd(001)表面的单层p(1×1)和c(2×2)结构的表面磁性和总能. 所得结果表明:对于Sc, Ti, V和Cr只存在p(1×1)的铁磁性结构,而Mn只有c(2×2)的反铁磁结构存在. Fe, Co和Ni这三种元素上述两种结构都存在,但是总能上p(1×1)的铁磁结构要低些,因此是比较稳定的结构. 而Cu和Zn在该表面上的单层中不存在上述两种结构. 对于V的p(1×1)铁磁结构,计算得到的每个V原子磁矩为2.41μB,大于用全电子方法得到的0.51μB. 两种计算方法得到其他金属原子 (Cr,Mn,Fe,Co,Ni)的表面磁矩比较相近,都比孤立原子磁矩略小. 关键词: Pd(001)表面 过渡金属原子单层 表面磁性  相似文献   
42.
Using the master equation approach to a V-type three-level atom inside a high-finesse single-mode cavity in the strong coupling condition,we demonstrate the approximation of eliminating populations of atomic excited states,which is widely used in the field of the atom-cavity systems [Hechenblaikner G,Gangl M,Horak P and Ritsch H 1998 Phys.Rev.A 58 3030];Liu L W,Tan T and Xu Y 2008 J.Mod.Opt.56 968;Cho J,Angelakis D G and Bose S 2008 Phys.Rev.A 78 062338.This is reflected in the deviation of the population δ,of which the value is 10~(-3)~10~(-2).We further find the deviation of the dipole force and demonstrate that the deviation of atomic population will not notably affect the dipole force of the atom in the strong coupling condition.A relevant experimental case is also presented.  相似文献   
43.
For the packaging of a pump laser in butterfly package, the most crucial assembly step is the fiber-to-laser diode coupling and attachment. The use of laser welding as the joining method offers several advantages if compared with the adhesive joints: strong joining strength, short process time and less contamination. This paper reports on laser welding process characteristics; weld strength and its fracture mode. The penetration depth and melt area of laser spot welds were found to be complicated functions of laser pulse energy, intensity, and beam diameter. Effects of pulse width, input power and size of the focal spot on the rate of energy input to the workpieces and consequently, the weld strength were reported. The weld strength was found to be dependent on the overlapping area between the two joining materials. Surface roughness, Ra, has influence on the fraction of energy absorbed, A, and therefore, affecting the penetration depth. Thermal analysis was carried out on the laser-welded joints and its heat-affected zone (HAZ) induced by various power densities was examined. These data are important in order to optimize and utilize the laser welding process as an effective manufacturing tool for fabrication of reliable pump laser.  相似文献   
44.
45.
Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.  相似文献   
46.
A new oral delivery system, polybutylcyanoacrylate nanoparticles (PBCNs), was introduced to improve the oral bioavailability of curcumin (CUR), a poorly soluble drug. The formulation was optimized by orthogonal design and the optimal PBCNs loading CUR exhibited a spherical shape under transmission electron microscopy with a range of 40?C400?nm. Physicochemical state of CUR in PBCN was investigated by X-ray diffraction and the possible structure changes occurring in CUR after conjugating with polybutylcyanoacrylate were studied with FTIR. The results indicated that CUR in PBCN was in a non-crystalline state and CUR was encapsulated in PBCN without chemical reaction. The oral pharmacokinetic study was conducted in rats and the relative bioavailability of CUR encapsulated PBCNs to the crude CUR was more than 800%. The in situ absorption experiment in rat intestine indicated the absorption was first order with passive diffusion mechanism. The absorption results in various segments of intestine showed that the main absorption sites were ileum and colon. It can be concluded that PBCNs as an oral carrier can significantly improve the oral absorption of a poorly soluble drug.  相似文献   
47.
<正>This paper deals with the time evolution of information entropy for a stochastic system with double singularities driven by quasimonochromatic noise.The dimension of the Fokker-Planck equation is reduced by the linear transformation. The exact expression of the time dependence of information entropy is obtained based on the definition of Shannon’s information entropy.The relationships between the properties of dissipative parameters,system singularity strength parameter,quasimonochromatic noise,and their effects on information entropy are discussed.  相似文献   
48.
In this article, we report the principle and conceptual design of a fundamentally different technology in fabricating high precision aberration free optical devices. The tip-tilt of facet in a mirror array is produced by digitally controlled line-tilts of rows and columns. It has not only provided a cost-effective designing methodology in optical physics but also led to a much finer precision of 1 mili arc sec or less. As examples of the application of the proposed digitalised optics, two case studies have been given: a 10 m Schmidt telescope (off-axis) and an 8 m Cassegrain telescope (on-axis).  相似文献   
49.
The upconversion luminescences of YAlO3:Er3+ phosphor co-doping with different Gd3+ concentrations are investigated under the excitation of 980- and 532-nm diode lasers. A near ultraviolet upconversion emission at 410 nm is observed in YAlO3 under 532-nm excitation. Moreover, the inactive Gd3+ ions can improve the upconversion intensity efficiently in a certain range of concentration. Under 980-nm excitation, the visible upconversion emissions at 546 and 646 nm are enhanced by about 10 and 8 times at the Gd3+ concentration of 40%, respectively. The upconversion emission at 410 nm under 532-nm excitation is also enhanced by 7 times. The substitution of Gd3+ ions for Y3+ sites changes the local symmetry of Er3+, leading to the improvement of upconversion efficiency.  相似文献   
50.
The Nd-doped BiFeO3 thin films were prepared on SnO2(FTO) substrates spin-coated by the sol–gel method using Nd(NO3)3·6H2O, Fe(NO3)3·9H2O and Bi(NO3)3·5H2O as raw materials. The microstructure and electric properties of the BiFeO3 thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO3 films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi0.85Nd0.15FeO3 films gives rise to the largest Pr of 64 μC/cm2. The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi0.85Nd0.15FeO3 thin film at 10 kHz are 190 and 0.017 respectively.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号