The Antibacterial Activity Mode of Action of Plantaricin YKX against Staphylococcus aureus

We aimed to evaluate the inhibitory effect and mechanism of plantaricin YKX on S. aureus. The mode of action of plantaricin YKX against the cells of S. aureus indicated that plantaricin YKX was able to cause the leakage of cellular content and damage the structure of the cell membranes. Additionally, plantaricin YKX was also able to inhibit the formation of S. aureus biofilms. As the concentration of plantaricin YKX reached 3/4 MIC, the percentage of biofilm formation inhibition was over 50%. Fluorescent dye labeling combined with fluorescence microscopy confirmed the results. Finally, the effect of plantaricin YKX on the AI-2/LuxS QS system was investigated. Molecular docking predicted that the binding energy of AI-2 and plantaricin YKX was −4.7 kcal/mol and the binding energy of bacteriocin and luxS protein was −183.701 kcal/mol. The expression of the luxS gene increased significantly after being cocultured with plantaricin YKX, suggesting that plantaricin YKX can affect the QS system of S. aureus.     

Nonlinear Modeling Study of Aerodynamic Characteristics of an X38-like Vehicle at Strong Viscous Interaction Regions

Strong viscous interaction and multiple flow regimes exist when vehicles fly at high altitude and high Mach number conditions. The Navier–Stokes(NS) solver is no longer applicable in the above situation. Instead, the direct simulation Monte Carlo (DSMC) method or Boltzmann model equation solvers are usually needed. However, they are computationally more expensive than the NS solver. Therefore, it is of great engineering value to establish the aerodynamic prediction model of vehicles at high altitude and high Mach number conditions. In this paper, the hypersonic aerodynamic characteristics of an X38-like vehicle in typical conditions from 70 km to 110 km are simulated using the unified gas kinetic scheme (UGKS), which is applicable for all flow regimes. The contributions of pressure and viscous stress on the force coefficients are analyzed. The viscous interaction parameters, Mach number, and angle of attack are used as independent variables, and the difference between the force coefficients calculated by UGKS and the Euler solver is used as a dependent variable to establish a nonlinear viscous interaction model between them in the range of 70–110 km. The evaluation of the model is completed using the correlation coefficient and the relative orthogonal distance. The conventional viscous interaction effect and rarefied effect are both taken into account in the model. The model can be used to quickly obtain the hypersonic aerodynamic characteristics of X38-like vehicle in a wide range, which is meaningful for engineering design.     

低温制备≥99.5%多晶氧化铝陶瓷

本文通过引入稀土氧化物Y2O3、Tm2O3为烧结助剂低温制备了氧化铝含量大于99.5;的多晶氧化铝陶瓷.实验表明:稀土氧化物的加入能够明显降低99.5;多晶氧化铝陶瓷的烧结温度,提高致密度.Y2O3、Tm2O3混合烧结助剂与单一稀土氧化物的烧结助剂相比能够明显抑制晶粒的生长,促进晶粒的均匀发育.当Y2O3+Tm2O3的含量为0.3;质量分数时,99.5;多晶氧化铝陶瓷的相对密度可达99.2;理论密度,抗弯强度为533MPa,显微硬度为17.2GPa.陶瓷断裂主要以穿晶断裂为主.     

MAGNETOMECHANICAL BEHAVIORS OF GIANT MAGNETOSTRICTIVE MATERIALS

The Laves phase alloy Tb-Dy-Fe, commercially known as Terfenol-D, exhibits the giant room-temperature magnetostriction at moderate field strength of a few kOe due to its combination of high magnetostriction and low magnetocrystalline anisotropic energy. Thus, this pseudobinary rare earth iron compound has found quite a number of applications such as in magnetomechanical transducers, actuators and adaptive vibration control systems. The simultaneous measurements of magnetostriction and magnetization at various fixed compressive pre-stresses applied in the axial direction for Tb0.3Dy0.7Fe1.95 samples are presented. The results show that the magnetostriction increases with increasing compressive stress until it reaches 1742 ×10^6 under 25 MPa, so does the coercive magnetic field. And the hysteresis loop area for magnetization and magnetostriction also increases with the increment of applied compressive stresses. But the maximum magnetic susceptibility χ（dM/dH） is obtained under zero stress field and the strain derivative dλ/dH increases to the highest amplitude of 0.039×10^-6 A^-1m at a stress level of 5 MPa. In the strain versus magnetization intensity curve, the initial fiat stage mainly consisting of a 180° domain wall motion becomes shorter with increasing stress. It means more initial domains are driven to the transversal direction under the compressive stress before magnetization, which is consistent with the improvement of the magnetostriction.     

Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles

According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires(N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of NSiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature,for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity–temperature characteristics,that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing.These results contribute to the electronic application of nanodevices.     

Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films

Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.     

SiH3+O(3P)反应机理的理论研究

利用abinitio方法对SiH3+O(3P)反应进行了理论研究,在MP2/6-311+G(d,p)水平上优化得到了反应途径上的反应物、中间体、过渡态和产物的几何构型,并在QCISD(T)/6-311+G(d,p)水平上进行单点能计算.计算结果表明,SiH3+O(3P)→IM1→TS3→IM2→TS8→HOSi+H2为主反应通道,其他可能存在的次要产物有HSiOH+H、H2SiO+H和HSiO+H2.HOSi、HSiO和HSiOH(cis)还可能进一步解离生成SiO.另外,计算结果对SiH4+O(3P)反应机理中存在的争议给出了可能的解释,认为Withnall等人在实验中观察到的产物HSiOH、H2SiO和SiO并不是SiH4+O(3P)反应的直接产物,而是来自副反应SiH3+O(3P).     

一种基于新型查表方法的统一计算设备架构并行计算全息算法

为解决点源法计算全息速度较慢的问题,提出了一种新的查表算法,命名为三角函数查表法(T-LUT算法)。该算法是基于点源法基本的数学公式,通过一系列数学近似与恒等变换,生成了一种纯相位查找表,该查找表具有三维特性,并具有生成速度快、精度高、占用内存少等特点,克服了点源法重复计算相位的缺点。同时采用统一计算设备架构(CUDA)并行计算在图形处理器(GPU)上加以实现,并进行了三次并行优化。在算法的验证与对比实验中,采用单显卡(GPU显卡)实现T-LUT算法,在不牺牲全息图再现像质量的前提下,成功地将点源法计算全息的速度大幅度提升。实验发现在不同的物空间采样点数量的情况下,速度相对于点源法GPU运算提升30倍至近千倍不等。     

HFSiS构型及其稳定性的理论研究

利用密度泛函理论对三线态HFSiS分子结构及其稳定性进行了详细的理论研究.在B3LYP/6-311G**水平上计算出了各驻点的优化构型、振动频率,并对各个振动模式加以归属,在同样的理论水平上进行了IRC计算;CCSD(T)结合6-311G**基组对于驻点进行单点能及相对能量的计算;根据振动模式分析来阐明三线态势能面上各驻点之间的变化,并与单线态势能面进行比较.计算结果表明,三线态HFSiS分子存在6种异构体,3HFSiS结构在动力学和热力学上都是最稳定的,实验上应该可以观测到;在两组键旋转异构体当中,结构-2具有一定的动力学稳定性,而结构-1动力学稳定性较差;3SiSHF在动力学上和热力学上都是最不稳定的结构.