Coherent backscattering of light from saturated atoms

We survey recent progress achieved in understanding the impact of inelastic processes on coherent backscattering of light from cold atoms that are saturated by a powerful laser field.     

Ions and atoms in superfluid helium (4He)

We review the previous conclusion [J.Y. Ryu, Y.C. Chung and S.D. Choi, Phys. Rev. B 32, 7769 (1984)] that the trace property Tr(ABC) = Tr(CAB) leads to two different cyclotron transition absorption formulae in the electron-phonon systems in the lowest order approximation. The pictorial expression and the calculated linewidths in Ge and Si show that the socalled EWC scheme is more seeming than the socalled MWC scheme. The difference is expected to disappear if we take into account all the higher order perturbation terms or start with the many body formalism in the complete scheme.     

High dose iron implantation into silicon and metals

High dose implantations of Fe into metals and semiconductors have been performed with beam energies up to 1 MeV at the UNILAC-injector at GSI. Unusual high concentrations of 70 atomic % for Si and 20 atomic % for Cu have been obtained, with doses of 10¹⁸ Fe/cm² in the case of Si and several 10¹⁷ Fe/cm² in the case of Cu. For Si the thickness of the layers were determined by Rutherford backscattering to be 4500 Å. These results are consistent with calculations, which show that these high concentrations are due to the reduction of the sputter yield at the relative high particle energies. Samples have been characterized using several complementary methods (Mössbauer Spectroscopy (MS), Rutherford Backscattering Spectroscopy (RBS), Auger electron Spectroscopy (AES). Scanning Electron Microscopy (SEM), X-ray diffraction (XRD)).     

Eine ErweiterungT(V′) des Ordinalzahlensystems 58-0158-0158-01(Λ0) von G. Jäger

Summary This paper gives a recursive generalization of a strong notation system of ordinals, which was devellopped by Jäger [3]. The generalized systemT(V) is based on a hierarchy of Veblen-functions for inaccessible ordinals. The definition ofT(V) assumes the existence of a weak Mahlo-ordinal. The wellordering ofT(V) is provable in a formal system of second order arithmetic with the axiom schema of ₂ ¹ -comprehension in a similar way, as it is proved in [6] for the weaker notation systemT(V).     

Periodic solutions of some infinite-dimensional Hamiltonian systems associated with non-linear partial difference equations. II

This is our second paper devoted to the study of some non-linear Schrödinger equations with random potential. We study the non-linear eigenvalue problems corresponding to these equations. We exhibit a countable family of eigenfunctions corresponding to simple eigenvalues densely embedded in the band tails. Contrary to our results in the first paper, the results established in the present paper hold for an arbitrary strength of the non-linear (cubic) term in the non-linear Schrödinger equation.     

Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere

Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×10⁷cm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E _A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×10³ cm²/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was =3.6 × 10⁵cm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of >10⁷ cm can be achieved for bulk InP with the purity of nominally undoped material (10¹⁵ to 10¹⁶cm^–3).