首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   34329篇
  免费   4376篇
  国内免费   3898篇
化学   25021篇
晶体学   431篇
力学   1701篇
综合类   305篇
数学   4077篇
物理学   11068篇
  2024年   86篇
  2023年   521篇
  2022年   945篇
  2021年   1031篇
  2020年   1107篇
  2019年   1139篇
  2018年   952篇
  2017年   910篇
  2016年   1408篇
  2015年   1439篇
  2014年   1696篇
  2013年   2386篇
  2012年   2728篇
  2011年   2897篇
  2010年   2119篇
  2009年   2041篇
  2008年   2353篇
  2007年   2105篇
  2006年   1893篇
  2005年   1699篇
  2004年   1347篇
  2003年   1106篇
  2002年   1053篇
  2001年   899篇
  2000年   736篇
  1999年   670篇
  1998年   568篇
  1997年   495篇
  1996年   517篇
  1995年   425篇
  1994年   401篇
  1993年   384篇
  1992年   364篇
  1991年   311篇
  1990年   251篇
  1989年   205篇
  1988年   181篇
  1987年   142篇
  1986年   156篇
  1985年   167篇
  1984年   109篇
  1983年   68篇
  1982年   76篇
  1981年   55篇
  1980年   54篇
  1979年   62篇
  1978年   41篇
  1976年   37篇
  1974年   44篇
  1973年   46篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
102.
103.
104.
105.
106.
107.
The electrical behavior of the cationic, polyacetylene-based, conjugated ionomer, poly[(2-cyclooctatetraenylethyl)trimethylammonium trifluoromethanesulfonate], sandwiched between gold electrodes is reported. The steady-state current of this mixed ionically/electronically conducting system is assigned to be unipolar diffusive hole transport for voltages below approximately 1.4 V, giving way to bipolar migratory transport above approximately 1.4 V. In the low-voltage regime, a non-Faradaically controlled doping model is proposed where p-doping at the anode is balanced by the charging of an ionic double layer at the cathode. In the high-voltage regime, n- and p-type regions extend from the electrodes as the voltage becomes sufficient to drive disproportionation and the electric field required by the redistribution of ions begins to substantially influence carrier transport. The assignment of a transport mechanism is primarily based on analyzing the decay of the steady-state system under short-circuit and open-circuit conditions. First, it is shown that the power describing the power-law decay of the short-circuit current is characteristic of the steady-state carrier profile. Second, it is argued that a component of the time-dependent, open-circuit voltage decaying more rapidly than the time scale for ion motion is indicative of a substantial migratory component to steady-state transport, as observed in the high-voltage regime. The hole and electron mobilities are estimated to be on the order of 10(-7)-10(-6) cm(2) V(-1) s(-1).  相似文献   
108.
Papers on braid theory and some of its generalization and applications, reviewed in Referativnyi Zhurnal Matematika during 1953–1977, as well as individual papers on an earlier period, are surveyed.Translated from Itogi Nauki i Tekhniki, Algebra, Topologiya, Geometriya, Vol. 17, pp. 159–227, 1979.  相似文献   
109.
C, N, O, F, Cl, and Br red and infrared laser emission was investigated using hollow cathode discharges in gas mixtures of helium and molecules containing the corresponding atoms. A total of 33 laser lines with wavelengths from 0.7 to 2.0m was observed. Three laser lines of atomic C, five laser lines of atomic N, two laser lines of atomic Cl and five laser lines of atomic Br were observed for the first time. Dissociation charge transfer and dissociative excitation transfer are suggested as being responsible for populating the upper laser levels.  相似文献   
110.
The magnetic depolarization of the impact radiation at λ(41 D?21 P)=492 nm and λ(31 D?21 P) = 668 nm as well as the splitting of the magnetic depolarisation signals in electric fields were investigated for 10–25 keV H 2 + (D 2 + )-He collisions (only 492 nm line) and for 5-22.5 keV He-He collisions (both lines). The results are compared with analogous measurements for He+- He and Ne+ - He collisions and the dynamics of the excitation process are qualitatively discussed. In particular, we emphasize the importance of inertia for the evolution of the electron cloud during the final phase of the collision process.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号