The onset of deconfinement inSU(2) lattice gauge theory

InSU(2) lattice gauge theory, we study deviations from ideal gas behaviour near the deconfinement point. On lattices of sizeN _σ ³ ×4,N _σ=8, 12, 18 and 26, we calculate the quantityΔ≡(ε?3P)/T ⁴. It increases sharply just aboveT _c , peaks atT/T _c =1.15 ±0.05 and then drops quickly. This form of behaviour is shown to be the consequence of a second order phase transition. Dynamically it could arise because just aboveT _c , the low momentum states of the system are remnant massive modes rather than deconfined massless gluons.     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

Synthesis and Inclusion Properties of the Host Compound 1,3-Dihydro-1,1,3,3-tetraphenylisobenzofuran. X-Ray Crystal Structures of the Free Host and of an Inclusion Compound with 1,4-Dioxane

A novel host molecule, 1, suitable for crystalline lattice-type inclusion, has been synthesized, and its cocrystal formation ability has been investigated. Host 1 proved to be of potential use for organic solvent separation and retrieval, and a promising auxiliary for solidification of certain odorous substances. The crystal structures of the solvent-free host 1, and its complex with 1,4-dioxane (1 : 1), have been determined by single crystal X-ray diffraction. The structure of 1 (guest-free) is triclinic, P , with a = 9.452(2), b = 10.359(3), c = 13.116(3) Å, = 101.80(2), = 106.53(1) and = 104.32(1)°. The spacious, propeller-like molecules are held together by weak van der Waals' forces. The dioxane inclusion compound is monoclinic, P21/a, with a = 15.050(1), b = 8.641(1) and c = 20.658(1) Å, and = 94.56(1)°, and contains two crystallographically independent guest molecules, both located around symmetry centres. The molecular packing seems to be governed by C—H···O type bonds (C···O = 3.31 and 3.48 Å) from the host to the dioxane oxygens.