Tailoring of the spectral–directional characteristics of rare-earth fluorescence by metal–dielectric planar structures

It is demonstrated that the spectrum, direction and polarization of rare-earth fluorescence can be tailored by embedding the impurity ions into a planar metal–dielectric structure (MDS). The latter was designed by spin coating a rare-earth-doped oxide film (TiO₂:Sm³⁺) onto a gold-covered glass substrate. For spectral–directional investigations of Sm³⁺ fluorescence, the MDS was attached to a semi-cylindrical prism and excited by UV light from the flat side. An angular scan revealed a strongly polarized and directional emission of Sm³⁺ from the convex side of the prism. The tuning of TiO₂ film thickness in the MDS allows a control of the polarization and direction of the emission bands. A theoretical modeling of the reflectivity of the MDS suggests that the observed angular resonances in the fluorescence emission are caused by its effective coupling with surface plasmons on the gold–dielectric interface or coupling with leaky modes in sufficiently thick dielectric films working as a waveguides.     

Tunable dielectric thin films by aqueous, inorganic solution-based processing

Sub-micron, nanolaminated, dielectric thin films comprised of amorphous aluminum oxide phosphate (AlPO) and hafnium oxide sulfate (HafSOx) layers were fabricated in open-air conditions from aqueous inorganic precursors by spin coating with minimal thermal processing. These nanolaminated thin film insulators display an averaging effect of effective dielectric permittivity in devices with controlled AlPO:HafSOx thickness ratios, enabling tunable dielectric properties. X-ray reflectivity measurements were used to characterize film thickness, smoothness, and uniformity. Scanning electron microscopy was used to analyze final nanolaminated devices. Electrical characterization of metal-insulator-insulator-metal capacitors revealed tunable relative dielectric constants ranging from approximately 5–10 with loss tangents less than 2% at 10 kHz in devices with approximately 300 nm total dielectric thickness. The results suggest a simple, inexpensive processing approach for fabricating devices that require insulating layers with specific dielectric properties.