Asymptotic behavior of M-estimator and related random field for diffusion process

The M-estimate which maximizes a positive stochastic process Q is treated for multidimensional diffusion models. The convergence in distribution of the process of ratio of Q's after normalizing is proved. The asymptotic behavior of M-estimates is stated. We present the asymptotic variance in general cases and in estimation by misspecified models.     

Quasi likelihood analysis of volatility and nondegeneracy of statistical random field

We construct a quasi likelihood analysis for diffusions under the high-frequency sampling over a finite time interval. For this, we prove a polynomial type large deviation inequality for the quasi likelihood random field. Then it becomes crucial to prove nondegeneracy of a key index _χ0${\chi }_0$. By nature of the sampling setting, _χ0${\chi }_0$ is random. This makes it difficult to apply a naïve sufficient condition, and requires a new machinery. In order to establish a quasi likelihood analysis, we need quantitative estimate of the nondegeneracy of _χ0${\chi }_0$. The existence of a nondegenerate local section of a certain tensor bundle associated with the statistical random field solves this problem.     

Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors

We report characterization of ZnO thin-film transistors (TFTs) on glass substrates fabricated by pulsed laser deposition (PLD). ZnO films were characterized by X-ray diffraction (XRD), atomic force microscopy and Hall effect measurements. The XRD results showed high c-axis-oriented ZnO(0002) diffraction corresponding to the wurtzite phase. Moreover, the crystallization and the electrical properties of ZnO thin films grown at room temperature are controllable by PLD growth conditions such as oxygen gas pressure. The ZnO films are very smooth, with a root-mean-square roughness of 1 nm. From the Hall effect measurements, we have succeeded in fabricating ZnO films on glass substrates with an electron mobility of 21.7 cm²/V s. By using the ZnO thin film grown by two-step PLD and a HfO₂ high-k gate insulator, a transconductance of 24.1 mS/mm, a drain current on/off ratio of 4.4×10⁶ and a subthreshold gate swing of 0.26 V/decade were obtained for the ZnO TFT.     

Conical spin-spiral state in an ultrathin film driven by higher-order spin interactions

We report a transverse conical spin spiral as the magnetic ground state of a double-layer Mn on a W(110) surface. Using spin-polarized scanning tunneling microscopy, we find a long-range modulation along the [001] direction with a periodicity of 2.4 nm coexisting with a local row-wise antiferromagnetic contrast. First-principles calculations reveal a transverse conical spin-spiral ground state of this system which explains the observed magnetic contrast. The canting of the spins is induced by higher-order exchange interactions, while the spiraling along the [001] direction is due to frustrated Heisenberg exchange and Dzyaloshinskii-Moriya interaction.     

The spin dynamics in distorted kagome lattices: a comparative Raman study

Despite the conceptional importance of realizing spin liquids in solid states only few compounds are known. On the other hand the effect of lattice distortions and anisotropies on the magnetic exchange topology and the fluctuation spectrum is an interesting problem. We compare the excitation spectra of the two s = 1/2 kagome lattice compounds, volborthite and vesignieite, using Raman scattering. We demonstrate that even small modifications of the crystal structure may have a huge effect on the phonon spectrum and low-temperature properties.     

Three Distinct Redox States of an Oxo‐Bridged Dinuclear Ruthenium Complex

A series of [{(terpy)(bpy)Ru}(μ‐O){Ru(bpy)(terpy)}]ⁿ⁺ ( [RuORu]ⁿ⁺ , terpy=2,2′;6′,2′′‐terpyridine, bpy=2,2′‐bipyridine) was systematically synthesized and characterized in three distinct redox states (n=3, 4, and 5 for Ru^II,III₂ , Ru^III,III₂ , and Ru^III,IV₂ , respectively). The crystal structures of [RuORu]ⁿ⁺ (n=3, 4, 5) in all three redox states were successfully determined. X‐ray crystallography showed that the Ru? O distances and the Ru‐O‐Ru angles are mainly regulated by the oxidation states of the ruthenium centers. X‐ray crystallography and ESR spectra clearly revealed the detailed electronic structures of two mixed‐valence complexes, [Ru^IIIORu^IV]⁵⁺ and [Ru^IIORu^III]³⁺ , in which each unpaired electron is completely delocalized across the oxo‐bridged dinuclear core. These findings allow us to understand the systematic changes in structure and electronic state that accompany the changes in the redox state.     

Direct Observation of Ordered High‐Spin–Low‐Spin Intermediate States of an Iron(III) Three‐Step Spin‐Crossover Complex

A neutral mononuclear Fe^III complex [Fe^III(H‐5‐Br‐thsa‐Me)(5‐Br‐thsa‐Me)]?H₂O ( 1 ; H₂‐5‐Br‐thsa‐Me=5‐bromosalicylaldehyde methylthiosemicarbazone) was prepared that exhibited a three‐step spin‐crossover (SCO) with symmetry breaking and a 14 K hysteresis loop owing to strong cooperativity. Two ordered intermediate states of 1 were observed, 4HS–2LS and 2HS–4LS, which exhibited reentrant phase‐transition behavior. This study provides a new platform for examining multistability in SCO complexes.     

Recent Advances in Self‐Oscillating Polymer Material Systems

In 1996, we first reported self‐oscillating polymer gels exhibiting autonomous swelling‐deswelling oscillations driven by the Belousov‐Zhabotinsky reaction. In contrast to conventional stimuli‐responsive gels, the self‐oscillating gel can autonomously and periodically change its volume in a closed solution without any external stimuli. Since the first report, the novel concept of self‐oscillating gels has been expanded into various polymer and gel systems. Herein, we summarize recent advances in self‐oscillating polymers and gels.