Quasioptical Approach for Meniscus Lens Corrected Horn: Application to Cassegrain Systems

The Beam Mode Expansion (BME) approach for corrugated conical feed horn plus meniscus lens is presented. This approach is useful for providing the radiation pattern as it propagates through an optical system. A developed theoretical model has been verified measuring near and far field of a built horn and lens. These results have been used for designing the optical system of a Cassegrain antenna at 100GHz using the fundamental Gaussian beam mode (GBM) of the new approach. Multimode analysis has been performed with the pre-designed system in order to test the fundamental GBM results.     

Characterization theorems for the projective space and vector bundle adjunction

 We consider some conditions under which a smooth projective variety X is actually the projective space. We also extend to the case of positive characteristic some results in the theory of vector bundle adjunction. We use methods and techniques of the so called Mori theory, in particular the study of rational curves on projective manifolds. Received: 16 May 2002 / Revised version: 18 November 2002 Published online: 3 March 2003 Mathematics Subject Classification (2000): 14E30, 14J40, 14J45     

Features of light attenuation in crystals under violation of the Bouguer law

A computer simulation and measurements of the light transmittance of germanium and paratellurite crystals of different thickness were used to show that, at scattering probabilities of photons comparable to their absorption probabilities, the standard methods for calculating light extinction coefficients on the basis of the Bouguer law lead to rough errors in estimation of the optical quality of a material.     

Modeling of the defect structure in dislocation-free silicon single crystals

A mathematical model of the formation of primary grown-in microdefects on the basis of dissociation diffusion is presented. Cases of “vacancy-oxygen” (V + O) and “carbon-interstitial” (C + I) interaction near the crystallization front are considered for dislocation-free Si single crystals grown by the floating-zone and Czochralski methods. The approximate analytical expressions obtained by setting 1D and 2D temperature fields in a crystal are in good agreement with the heterogeneous mechanism of formation of grown-in microdefects.