Testing exponentiality against a class of alternatives which includes the RNBUE distributions based on the empirical laplace transform

A scale-free test for exponentiality is proposed which is consistent within an extended set of models, including, but not limited to, the “renewal new better than used in expectation” (RNBUE) class of life distributions. The limiting null distribution of the test statistics is derived, and the approximate local Bahadur efficiency is calculated for several families of alternatives. Finite-sample properties of the proposed procedures are investigated via simulation. Bibliography: 24 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 339, 2006, pp. 63–77.     

Application of minimal interpolation splines to solve the Cauchy problem

Methods for solving the Cauchy problem are suggested. The use nonpolynomial splines, which ensure the required accuracy for a rather wide class of functions. Computational results are presented.     

Surface modification of polystyrene with the bovine serum albumin-Tween 80 complex and a forecast of biocompatibility

The surface of polystyrene was modified with the bovine serum albumin-Tween 80 complex. The adsorption of the complex and the formation of films on the surface of polystyrene were studied using the piezoelectric weighing method. The state of the modified surface was evaluated by contact angle measurements. The stability of the modifying layer was determined based on the critical interfacial energy values of the surface equilibrated with water. A conclusion was drawn that the complex can be effectively used to enhance the biocompatibility of polymer materials.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

Models of elastic media with stress relaxation

The stress relaxation process is linked to the change with time of the metric stress tensor of the medium. Possible types of thermodynamically justified relaxation equations are discussed.     

1/f Noise in dye-sensitized solar cells and NIR photon detectors

All electronic devices are plagued with 1/f noise originating from many causes. The most important factors contributing to 1/f noise in a semiconductor is believed to be recombination of carriers and their trapping at defects and impurity sites. Adsorption of moisture and electron acceptor molecules enhances the intensity of 1/f noise. Amazingly, some molecular species that strongly chelate to the semiconductor surface, suppress 1/f noise owing to passivation of the recombination sites. Thus in addition to sensitization, the dye adsorbed on the nanocrystallites plays a key role in mitigation of recombinations. For this reason dye-sensitized heterojunctions could also find application as low noise NIR photon detectors. Experiments conducted with oxide semiconductors (TiO₂, ZnO, SnO₂) indicate that the mode of binding of dyes at specific sites determines the extent to which the recombination and 1/f noise are suppressed. The transport of electrons in a nanocrystalline matrix is diffusive with a diffusion coefficient D depending on the trapping and detrapping processes. Thus passivation of trapping sites by the adsorbed dye is expected to increase the response time which can be expressed as τ  L²/D, where L = thickness of the nanocrystalline film. Measurement techniques and construction of a dye-sensitized NIR photon detector will be discussed.     

Prospects for triggering in experiment PAX at GSI

In experiment PAX, proposed for the new accelerator complex at GSI, investigations in the field of high-energy spin physics with the use of a polarized antiproton beam are planned. In this paper the possibilities for triggering are considered taking into account the PAX detector properties and a probable configuration of the trigger system is discussed for the first time. The text was submitted by the authors in English.