Proton-proton correlations at small relative momentum in neon-nucleus collisions at E/A=400 and 800 MeV

Proton-proton small angle correlations have been measured in neon-nucleus collisions, using the 4 pi detector Diogene, at 400 and 800 MeV per nucleon incident energies. Values of the size of the emitting region are obtained by comparison with the Koonin formula, taking into account the biases of the apparatus. The dependence of the density on target mass and incident energy is also analysed.     

Mössbauer spectroscopic and SEM study of Campanian and Terra sigillata pottery from Spain

A combination of Mössbauer spectroscopy (CEMS and transmission) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDAX) was employed to study the differences between coat and body in Campanian and Terra Sigillata wares. Conclusions about type of clay, origin of colour, and fabric and firing technology are established.     

Complex dynamics and configurational entropy of spatial optical solitons in nonlocal media

Intense light propagating in a nonlinear medium can generate an ensemble of interacting filaments of light, or spatial solitons. Using nematic liquid crystals, we demonstrate that the filaments exhibit collective behavior typical of complex systems, including the formation of clusters and soundlike vibrations, as well as the reduction of the configurational entropy, controlled by the degree of nonlocality of the medium.     

Empirical analysis of the evolution of a scientific collaboration network

We present an analysis of the temporal evolution of a scientific coauthorship network, the genetic programming network. We find evidence that the network grows according to preferential attachment, with a slightly sublinear rate. We empirically find how a giant component forms and develops, and we characterize the network by several other time-varying quantities: the mean degree, the clustering coefficient, the average path length, and the degree distribution. We find that the first three statistics increase over time in the growing network; the degree distribution tends to stabilize toward an exponentially truncated power-law. We finally suggest an effective network interpretation that takes into account the aging of collaboration relationships.     

Single‐crystal diffraction at the Extreme Conditions beamline P02.2: procedure for collecting and analyzing high‐pressure single‐crystal data

Fast detectors employed at third‐generation synchrotrons have reduced collection times significantly and require the optimization of commercial as well as customized software packages for data reduction and analysis. In this paper a procedure to collect, process and analyze single‐crystal data sets collected at high pressure at the Extreme Conditions beamline (P02.2) at PETRA III, DESY, is presented. A new data image format called `Esperanto' is introduced that is supported by the commercial software package CrysAlis^Pro (Agilent Technologies UK Ltd). The new format acts as a vehicle to transform the most common area‐detector data formats via a translator software. Such a conversion tool has been developed and converts tiff data collected on a Perkin Elmer detector, as well as data collected on a MAR345/555, to be imported into the CrysAlis^Pro software. In order to demonstrate the validity of the new approach, a complete structure refinement of boron‐mullite (Al₅BO₉) collected at a pressure of 19.4 (2) GPa is presented. Details pertaining to the data collections and refinements of B‐mullite are presented.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)