DX center has been characterized in four GaAs---AlAs superlattices grown by MBE at 580°C. The structures are uniformly Si-doped or selectively Si-doped in the AlAs layers or in the middle of the GaAs layers or on both sides of the interfaces. Deep level transient spectroscopy measurements (DLTS) put in evidence one dominant electron trap, with an activation energy for thermal emission of about 0.42eV for all the superlattices. This defect shows a thermally activated capture cross section and a large concentration except for the case where the only GaAs layers are doped. For the first time, a study of the capture reveals a capture activation energy of 0.36-0.37 eV, which allows us to locate the DX level nearly 60 meV below the conduction miniband. From these results, we show that the observed DX center is related to silicon in the AlAs layers. For the case when the AlAs barriers are not doped, the DX level is due to the Si diffusion from the middle of the wells towards the barriers, the Si atoms having diffused during the growth. 相似文献
The structure consists of two acetyl-substituted PCU cages linked by a diyne fragment. The conformation about the linker is midway between staggered and eclipsed, and the acetyl groups are somewhat distorted due to the proximity to the bulky cage units. 相似文献
Macrocellular silicone polymers are obtained after solidification of the continuous phase of a poly(dimethylsiloxane) emulsion, which contains poly(ethylene glycol) drops of sub‐millimetric dimensions. Coalescence of the liquid template emulsion is prohibited by a reactive blending approach. The relationship is investigated in detail between the interfacial properties and the emulsion stability, and micro‐ and millifluidic techniques are used to generate macrocellular polymers with controlled structural properties over a wider range of cell sizes (0.2–2 mm) and volume fractions of the continuous phase (0.1%–40%). This approach could easily be transferred to a wide range of polymeric systems.
Optoelectronic devices with free-space optical interconnections offer new possibilities in massively parallel processing. The trade-offs involved in system design and device selection for optoelectronic implementations are examined. System design trade-offs are approached from algorithmic and technological standpoints. From the algorithmic standpoint, new architectures based on expander graphs, that have been shown to provide low-contention fault-tolerant communication, are discussed. Optoelectronic systems which implement such random graphs can be folded to reduce the hardware cost or unfolded to increase bandwidth. They can also be partially folded by increasing the grain size or by reducing the randomness of the graph topology to reduce the complexity of the interconnection holograms. An optoelectronic and a VLSI implementation of a multistage interconnection network are compared from a technological standpoint. Physical design parameters, such as the chip size or the number of phase levels of the interconnection holograms, are related to the system design metrics such as bandwidth, volume, area and power. It is shown that the optoelectronic implementations have higher performance and are more cost-effective than VLSI implementations. These results are also used to provide general guidelines for device selection in the design of smart pixels/smart spatial light modulators based optoelectronic systems. 相似文献
Two oxynitrides of the LnSiDN system were studied by IR spectroscopy : Nd2Si3O3N4, with a melilite-like structure and Nd4Si2O7N2 with a cuspidine-like structure. The first compound belongs to the space group D32d(P4̄21m) with two formula units per unit cell. There are 10 vibrations of B2 species and 18 of E species active in the IR. A preliminary study by neutron diffraction displayed that the oxygen and nitrogen atoms are perfectly ordered, and that two silicon atoms are bridged by an oxygen. In the present work, we compare the (SiON2)2O IR vibrations with those of silicon oxynitride previously studied and |Si2O7|6? ion in akermanite. The space group of cuspidine is C52h (P21/c with 4 formula units per unit cell. So, 21 vibrations of Au species and 21 of Bu species are active in IR absorption for Nd4Si2O7N2. The absorption bands are not as sharp as the bands in Nd2Si3O3N4. This fact might be explained by a disordered structure as the nitrogen position has not been exactly determined. 相似文献