Electrical conduction mechanism in a polycrystalline Sb35Se65 sample

Localized state conduction through a variable-range hopping mechanism in the low-temperature region (～180–270 K) and thermally activated phonon-assisted tunneling in the higher-temperature region (～270–320 K) has been observed in a polycrystalline Sb₃₅Se₆₅ sample.     

Static charged gas spheres in general relativity

In the present paper the field equations of general relativity have been solved to obtain the different solutions for the static charged gas sphere. These solutions are free from singularities and satisfy the necessary physical conditions.     

Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices

We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j>/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.     

Convenient Preparation of Glycosyl Bromides

Glycosyl bromides were prepared in very good yields by bromination of the corresponding anomeric hydroxyl group using a 1:1 mixture of triphenyl phosphite and bromine as reagent.     

Ruthenium(IV) pyrochlore oxides: Realization of novel electronic properties through substitution at A- and B-sites

We describe an exploratory investigation of the structure and electronic properties of new ruthenium(IV) pyrochlore oxides and their manganese-substituted derivatives. Our investigations have revealed several, hitherto unreported, electronic ground states for these materials: a metallic and Pauli paramagnetic state for BiPbRu₂O_6.5 that turns into a semiconducting ferromagnetic spin-glass state at 50 K for BiPbRuMnO_6.5; a metallic state that likely shows a charge density wave (CDW) instability at 50–225 K for Bi_1.50Zn_0.50Ru₂O_6.75 that is suppressed by manganese substitution in Bi_1.50Zn_0.50Ru_1.75Mn_0.25O_6.50; and a metallic ferromagnetic spin-glass like state for Pb₂Ru_1.75Mn_0.25O_6.15. The results indeed affirm the richness of the electronic properties of ruthenium-based metal oxides.