Crystallization of Semiconductor Nanorods into Perfectly Faceted Hexagonal Superstructures

Super crystallization of ligand‐capped nanocrystals into defined periodic solids from solution is the definitive demonstration of their self‐organizing properties. To date, this has been mainly limited to spherical nanocrystals where organization emulates atom or molecule packing in regular crystals with the most thermodynamically stable arrangement being eventually preferred. Here, the crystallization of wurtzite CdS nanorods into micrometer‐sized CdS superstructures with regular hexagonal symmetry is demonstrated by fine‐tuning the nanorod dispersibility over time. It is shown that the supercrystals have a long nucleation stage to form monolayer hexagons followed by a relatively faster growth stage both occurring rod by rod (in‐plane) and layer by layer (out of plane). The perfectly symmetrical hexagon shape of the final structure is mapped from the wurtzite crystal structure of each individual nanorod where they pack in side by side and end to end arrangements. These well‐defined superstructures are highly attractive for applications that collectively exploit electronic or optical properties that are synthetically tunable through the size and shape of each nanorod building block.     

Copper (50 MeV) and Oxygen (84 MeV) Ion Irradiation Probed Thermal,Structural and Optical Behavior of Polyethylene Terephthalate

Polyethylene terephthalate (PET) films of 50?μm thickness were exposed to swift-heavy 50?MeV copper and 84?MeV oxygen ions, with fluence varying from 1?×?10¹¹ to 1?×?10¹³ ions cm^?2. Differential scanning calorimetry (DSC), X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) and UV-visible spectroscopic techniques were used to characterize the irradiated samples. The XRD and DSC analysis indicated the loss of crystallinity during/after the irradiation. The FTIR spectra revealed the formation of alkyne end groups, C═C groups and structural deformation with increase of ion fluence. Considerable reduction in the value of the optical bandgap was inferred from the study of the UV-visible absorption curves.     

Infrared and Raman Spectra for Amino Group and C˭O Stretching Modes in Biomolecule 5‐Aminouracil

Abstract

Assuming planar geometry of 5‐aminouracil and C_s point group symmetry, it has been possible to assign all the 36 (25a′+11a″) normal modes of vibration. The two NH bonds of the NH₂ group appear to be non-equivalent as the NH₂ stretching frequencies and do not satisfy the empirical relation proposed for the two equivalent NH bonds of the NH₂ group due to their involvement and interaction with one hydrogen bond and the other adjacent oxygen atom of the parent molecule. The planar and nonplanar bending modes due to the C₄?O₈ bond are expected with have lower magnitude compared with those due to the C₂?O₇ bond.     

Vacuum Ultraviolet Absorption Spectrum of Difluoromethane Reinvestigated

The vacuum ultraviolet (VUV) absorption spectrum of difluoromethane (CH₂F₂) was studied using synchrotron radiation from the storage ring Indus-1, Indore, India. Spectra were recorded in the spectral region 1050–1500 Å (～8.3–11.8 eV) at a resolution of 1.5 Å. Three absorption band systems were observed in this region. Overall features observed are in good agreement with previously published work. Some discrepancies in assignments of the observed vibronic bands carried out by previous workers have been resolved. The observed bands have been classified in terms of Rydberg series.     

Effect of pit formation and surface roughness on size-dependent thermal conductivity of nanometer-thick semiconducting films

In this work, the thermal conductivity variation due to pit formation and surface roughness in nanometer-thick semiconducting films has been studied. It is shown that the thermal conductivity of thin films is reduced due to the presence of these effects in the films. This reduction in thermal conductivity is dependent on film thickness. The present analysis has been done on GaAs nanometer-thick films using the available experimental data.     

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta₂O₅/Si metal oxide semiconductor (MOS) capacitors using capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100?rad to 1?Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta₂O₅/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta₂O₅ MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N₂ ambient. The density of interface trap states (D_it) at Ta₂O₅/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta₂O₅/Si MOS devices.     

Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device

ABSTRACT

Crystalline silicon oxy-nitride (SiON) composite films are deposited on Si substrate for multiple (5, 15, 25 and 50) focus shots (FS) by plasma focus device. The X-rays diffraction patterns reveal the development of various diffraction peaks related to Si, Si₃N₄, and SiO₂ phases which confirms the formation of SiON composite film. The intensity of Si₃N₄ (1 0 2) plane is linearly increased with the increase of FS. The Si₃N₄ (1 0 2) phase does not nucleate for 5 FS. Raman analysis confirms the formation of β–Si–N phase. Raman and Fourier transform infrared spectroscopy analysis reveals that the strength of chemical bonds like Si–N, Si–O formed during the deposition process of SiON composite films is associated with the bonds intensity which in turn depends on the number of FS. The field emission scanning electron microscopic analysis reveals that the surface morphology like size, shape and distribution of micro/nano-dimensional particles, film compactness and the formation of micro-rods, micro-teethes and micro-tubes of SiON composite films is entirely associated with the rise in substrate surface transient temperature which in turn depends on the increasing number of FS. The EDX spectrum confirms the presence of Si (22.5?±?4.7 at. %), N (13.4?±?4.5 at. %) and O (54.7?±?11.3 at. %) in the SiON composite film. The thickness of SiON composite film deposited for 50 FS is found to ～15.47?µm.     

Photoluminescence and atomic force microscopy studies on pre- and post-irradiated ruby with Fe3+ ion

Photoluminescence spectra measured for pristine ruby and its two irradiated samples with Fe³⁺ ion show R₁, R₂, N lines and a broad band. Decrease in intensities of these features is observed with irradiation of Fe³⁺ ion in ruby. Progressive structural changes and modifications on surface of irradiated rubies with Fe³⁺ ion have been observed by atomic force microscopy. Decrease in intensities is discussed in terms of pair formation.     

A comparative study of ion-induced damages in C60 and C70 fullerenes

The stability of fullerenes (C₆₀ and C₇₀) under swift heavy ion irradiation is investigated. C₆₀ and C₇₀ thin films were irradiated with 120 MeV Ag ions at fluences from 1×10¹² to 3×10¹³ ions/cm². The damage cross-section and radius of damaged cylindrical zone were found to be higher for C₆₀ than C₇₀ as evaluated by Raman spectroscopy, which shows that the C₇₀ molecule is more stable under energetic ion impact. The higher damage cross-section of the C₆₀ molecule compared with that of the C₇₀ molecule is explained on the basis of thermal conductivity in the framework of the thermal spike model. The surface morphology of pristine C₆₀ and C₇₀ films is studied by atomic force microscopy. UV-visible absorption studies revealed that band gap for C₆₀ and C₇₀ fullerenes thin films decreases with increasing ion fluence. Resistivity of C₆₀ and C₇₀ thin films decreases with increasing ion fluence but the decrease is faster for C₆₀ than C₇₀, indicating higher damage in C₆₀. Irradiation at a fluence of 3×10¹³ ions/cm² results in complete damage of fullerenes (C₆₀ and C₇₀) into amorphous carbon.