β-NMR in II–VI semiconductors

β-active probe nuclei are implanted in nominally undoped ZnSe crystals. β-radiation detected nuclear magnetic resonance (β-NMR) studies are described for two different probe nuclei, ⁸Li and ¹²B. This way, the implantation behavior of two “opposite”dopants, one acceptor (Li) and one donor (B) can be characterized by the same microscopic technique. Such characterizations are attempted in terms of the structure of intermediate or final lattice sites, defect charge states, or the kinetics of defect reactions and site changes. This revised version was published online in July 2006 with corrections to the Cover Date.     

Synthesis, optical and electroanalytical characterizations of a thiacalix[4](N-phenylazacrown-5)ether-BODIPY ionophore

Novel fluorogenic 1,3-alt thiacalix[4](N-phenylazacrown-5)ether ionophore has been synthesized by conjugation of the N-phenyl group with borondipyrromethene (BODIPY) fluorophore moiety. The ionophore exhibits pronounced off-on type fluorescent responses to some transition metal ions, in particular to Cu²⁺. In a PVC membrane electrode, distinct Ag⁺ selectivity was observed in potentiometric transduction.     

A multidomain integrated‐radial‐basis‐function collocation method for elliptic problems

This article is concerned with the use of integrated radial‐basis‐function networks (IRBFNs) and nonoverlapping domain decompositions (DDs) for numerically solving one‐ and two‐dimensional elliptic problems. A substructuring technique is adopted, where subproblems are discretized by means of one‐dimensional IRBFNs. A distinguishing feature of the present DD technique is that the continuity of the RBF solution across the interfaces is enforced with one order higher than with conventional DD techniques. Several test problems governed by second‐ and fourth‐order differential equations are considered to investigate the accuracy of the proposed technique. © 2008 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2008     

Noise analysis of an electro-optic sensor system

Optical Review - This paper describes the noise analysis of an electro-optic (EO) sensor system based on experimental and simulation results. We developed a polarization simulator of the EO sensor...     

Two acridones and two coumarins from the roots of Paramignya trimera

Two acridones, paratrimerins C (1) and D (2), and two coumarins, paratrimerins E (3) and F (4), were isolated from the CHCl₃ and EtOAc extracts of Paramignya trimera (Rutaceae), together with twelve known compounds (5–16). Their structures were elucidated on the basis of spectroscopic data. All isolated compounds possessed significant α-glucosidase inhibitory activity in a concentration-dependent manner, and showed more potent inhibitory activity, with IC₅₀ values ranging from 14.6 to 112.2 μM, than the positive control acarbose (IC₅₀, 214.5 μM). The biosynthesis of the isolated coumarins and acridones was proposed.     

Formation of abnormal dual‐peak profiles in large tilt angle boron implantation

Large tilt angle (LTA) implantation has been employed in Si manufacturing processes in many applications, such as lightly doped drain and halo implant. The depth profile of boron ions usually consists of only single peak at incident angle of 0° with respect to the perpendicular of the silicon surface. However, an abnormal dual‐peak profile was observed at LTA (>40°) with incident energy of 160 keV. By using a Monte Carlo method to simulate the ion implant process, it was found that the projected range of boron ions agrees completely with the formation of the first peak position that is shallower in depth, while the cause for the second peak that corresponds with a depth much deeper in the Si substrate was unknown. During the simulation, it was also found that when the tilt angle was increased, the sputtering yields and Si displacements increased significantly, and this phenomenon indicates that during LTA implantation, Si damage may not be negligible anymore. The Si damage effect that was as due to either low Si density or transient Si displacement in the simulation could have led to partial incident boron ions penetrating much deeper into the Si substrate and thus, caused the emergence of the second peak. Copyright © 2016 John Wiley & Sons, Ltd.     

Flexural behavior of strain-softening solids

The flexural behavior of a beam is investigated in an attempt to establish a correlation between the tensile and bending properties of strain-softening solids. Given the complete uniaxial stress—strain relations, including the post-peak tension-softening portion, it is possible to predict the flexural behavior in moment—curvature and load—deflection relations. The results indicate that strain-softening gives rise to enhanced bending strength in agreement with experimental data. Conversely, given the bending responses together with the softening characteristics the complete tensile behavior can be determined. Since bending experiments are easier to perform than uniaxial tensile tests, this well-defined correlation provides a feasible means to obtain the entire tensile behavior of strain-softening solids such as concrete, rocks and ceramics.