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21.
M. Rovinsky 《Selecta Mathematica, New Series》2006,11(3-4):491-522
22.
We calculate the leading and next-to-leading logarithmic resummed distribution for the jet broadening in deep inelastic scattering,
as well as the power correction for both the distribution and mean value. A truncation of the answer at NLL accuracy, as is
standard, leads to unphysical divergences. We discuss their origin and show how the problem can be resolved. We then examine
DIS specific procedures for matching to fixed order calculations and compare our results to the data. One of the tools developed
for the comparison is an NLO parton distribution evolution code. When compared to PDF sets from MRST and CTEQ it reveals limited
discrepancies in both.
Received: 16 October 2001 / Published online: 12 April 2002 相似文献
23.
A detailed analysis is made within perturbative QCD of the decays into gluon jets of P-wave and S-wave quarkonia (JPC = 0++, 1++, 2++, 1+? and 0?+, 1??). For all those states we compute to leading non-trivial order in αs the conventional fraction f(?, δ) of the jet-like hadronic final states, characterized by the back-to-back cone of half angle δ, in which all but a small fraction ? of the total energy is emitted. To the same order we give also the average values of thrust momenta and spherocity distributions. 相似文献
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27.
A systematic study on the electrochemical behavior of diosmin in Britton-Robinson buffer (pH 2.0-10.0) at a glassy carbon electrode (GCE) was made. The oxidation process of the drug was found to be quasi-reversible with an adsorption-controlled step. The adsorption stripping response was evaluated with respect to various experimental conditions, such as the pH of the supporting electrolyte, the accumulation potential and the accumulation time. The observed anodic peak current at +0.73 V vs. Ag/AgCl reference electrode increased linearly over two orders of magnitude from 5.0x10(-8) M to 9.0x10(-6) M. A limit of detection down to 3.5x10(-8) M of diosmin at the GCE was achieved with a mean recovery of 97+/-2.1%. Based on the electrochemical data, an open-circuit accumulation step in a stirred sample solution of BR at pH 3.0 was developed. The proposed method was successfully applied to the determination of the drug in pharmaceutical formulations. The results compared favorably with the data obtained via spectrophotometric and HPLC methods. 相似文献
28.
The adsorption of hydrogen on a clean Cu10%/Ni90% (110) alloy single crystal was studied using flash desorption spectroscopy (FDS), Auger electron spectroscopy (AES), and work function measurements. Surface compositions were varied from 100% Ni to 35% Ni. The hydrogen chemisorption on a-surface of 100% nickel revealed strong attractive interactions between the hydrogen atoms in accordance with previous work on Ni(100). Three desorption states (β1, β2 and α) appeared in the desorption spectra. The highest temperature (α) state was occupied only after the initial population of the β2-state. As the amount of copper was increased in the nickel substrate, desorption from the higher energy binding α-state was reduced, indicating a decrease in the attractive interactions among hydrogen atoms. The hydrogen coverage at saturation was not affected by the addition of copper to the nickel substrate until the copper concentration was greater than 25% at which a sharp reduction in saturation coverage occurred. This phenomenon was apparently due to the adsorption of hydrogen on Ni atoms followed by occupation of NiNi and CuNi bridged adsorption sites, while occupation of CuCu sites was restricted due to an energy barrier to migration. 相似文献
29.
C. Ghezzi E. Gombia R. Mosca M. Pillan 《Applied Physics A: Materials Science & Processing》1989,48(5):457-463
Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device. 相似文献
30.
Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes. 相似文献