Quantum teleportation by entanglement swapping with trapped ions

An effective teleportation scheme for an unknown ionic internal state via trapped ions is proposed without joint Bell-state measurement (BSM). In the constructed quantum channel process, we make use of entanglement swapping to avoid decrease in entanglement during the distributing of particles. Thus our scheme provides new prospects for quantum teleportation in a longer distance. The distinct advantage of our scheme is insensitive to the heating of vibrational mode. Furthermore, our scheme has no any individual optical access, and the successful probability also can reach 1.     

Phonon–replica transitions in InGaN/GaN quantum well structures

A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and peak widths of the main and first side peaks of three InGaN/GaN multiple quantum well samples with different nominal indium contents are shown and interpreted. The existence of the side peaks is attributed to phonon–replica transitions. The variations of the peak position separations and the decreasing trends of the first side peak widths beyond certain temperatures in those samples were explained with the requirement of phonon momentum condition for phonon–replica transitions. In the sample with 25% nominal indium content, the phonon–replica transition could become stronger than the direct transition of localized states.     

掺铥氟磷玻璃的结构、热学性质和光谱性质

制备了不同Al(PO3)3含量的掺铥系列氟磷玻璃,研究了其结构、热稳定性和光谱性质。随着Al(PO3)3含量的增加,该系列玻璃的密度降低,折射率增加,差热分析表明,转变温度、析晶起始温度、析晶峰温度和熔化温度增加。Al(PO3)3摩尔浓度在7%~9%时析晶稳定性最佳。采用归一化的拉曼光谱分析了材料的结构和声子状况,对于该系列氟磷玻璃,Al(PO3)3含量的增加不会影响声子能量,但使声子密度增大。测试了样品的吸收光谱,Tm3 的3H6→3F4在第三通信窗口的L波段有明显吸收。与在其它玻璃基质中相比,Tm3 的3F4能级对应能量偏高,3H4能级对应能量偏低,使得3H4→3F4跃迁波长较大,接近于增益迁移光纤放大器的放大波长。扎得奥菲而特(Judd-Ofelt)理论分析表明随着Al(PO3)3含量增加,离子强度参量Ω2增大,Ω6保持相对稳定,Tm3 的能级寿命降低。     

Scheme for implementing quantum dense coding with four-particle decoherence-free states in an ion trap

This paper proposes an experimentally feasible scheme for implementing quantum dense coding of trapped-ion system in decoherence-free states. As the phase changes due to time evolution of components with different eigenenergies of quantum superposition are completely frozen, quantum dense coding based on this model would be perfect. The scheme is insensitive to heating of vibrational mode and Bell states can be exactly distinguished via detecting the ionic state.     

Exponential stability of Takagi-Sugeno fuzzy systems with impulsive effects and small delays

This paper deals with the exponential stability of impulsive Takagi-Sugeno fuzzy systems with delay. Impulsive control and delayed fuzzy control are applied to the system, and the criterion on exponential stability expressed in terms of linear matrix inequalities （LMIs） is presented.     

Impulsive control of nonlinear systems with time-varying delays

A whole impulsive control scheme of nonlinear systems with time-varying delays, which is an extension for impulsive control of nonlinear systems without time delay, is presented in this paper. Utilizing the Lyapunov functions and the impulsive-type comparison principles, we establish a series of different conditions under which impulsively controlled nonlinear systems with time-varying delays are asymptotically stable. Then we estimate upper bounds of impulse interval and time-varying delays for asymptotically stable control. Finally a numerical example is given to illustrate the effectiveness of the method.     

Al掺杂对Mg_2Si介电性质影响的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法,计算了本征Mg_2Si和Al掺杂Mg_2Si的形成能、电子结构和介电函数.结果表明,Al掺杂Mg_2Si后,Al以替位杂质(Al替Mg位,即AlMg)或填隙杂质(Al位于晶胞间隙位,即Ali)的形式进入Mg_2Si晶格.费米能级进入导带,体系呈n型导电.掺杂后体系的介电函数的实部和虚部在低频时比未掺杂时均增大,主要是由于晶格中的施主杂质Al离子束缚着附近的过剩电子,在外加交变电场的作用下,束缚在Al离子周围的电子要克服一定的势垒不断地往复运动造成松弛极化和损耗.另外,掺杂体系相对于未掺杂体系,介电函数的虚部在0.5 eV附近出现了一个额外的介电峰,该峰主要是由电子从价带跃迁到Al杂质能级引起的.计算结果为Mg_2Si基光电子器件的设计和应用提供了理论依据.     

GaN基薄膜半导体材料不同非线性效应的竞争关系

采用金属有机化合物化学气相沉积方法生长了未掺杂GaN,p型Mg掺杂GaN,InGaN/GaN多量子阱等薄膜半导体材料,研究了其在800 nm飞秒激光激发下的非线性光学性质.实验结果表明,在800 nm飞秒激光激发下,多光子荧光、二次谐波等非线性光学信号之间存在着竞争关系,反映出不同非线性光学信号对激发光的能量分配存在着竞争,并通过其非线性光学信号强度与激发强度之间的依赖关系进行了验证.同时,本文对其竞争机理进行了初步探究.     

Emission of 1.53 microm originating from the lattice site of Er3+ ions incorporated in TiO2 nanocrystals

Er(3+)-ion-doped anatase TiO(2) nanocrystals were prepared by simple wet chemical synthesis. Very sharp and intense near-infrared luminescence at approximately 1.53 microm was observed that originated from the lattice site of Er(3+) ions incorporated in TiO(2) nanocrystals. Based on the high-resolution emission and excitation spectra at 10 K, an efficient energy transfer from the TiO(2) host to Er(3+) ions was verified. The luminescence decay for the I13/24-->I15/24 transition at 1.53 microm showed nonexponential characteristics, indicating a nonradiative relaxation to the defects in the nanocrystals, and the intrinsic lifetime of the I13/24 state was determined to be 1.56 ms.     

四针状纳米氧化锌电磁波吸收特性

将四针状纳米ZnO作为吸收剂、环氧树脂为粘结剂制备成吸波涂层,分析了吸波涂层中的四针状纳米氧化锌含量及涂层厚度对吸波性能的影响,当涂层厚度为15mm时,吸收主要集中在15—18GHz波段;当涂层厚度增加到35mm后,样品的吸波性能提高明显,特别在6—11GHz之间的吸波性能提高显著,样品反射率小于-5dB的频率宽度达到136GHz(44—18GHz),其吸波性能相比较微米级ZnO有显著提高. 最后对四针状纳米氧化锌的吸波机理进行了讨论. 所研究的涂层在电磁波屏蔽方面具有较大的应用价值. 关键词： 四针状纳米ZnO 吸波性能 反射率 吸波机理