Determining the resistance of X-pinch plasma

The current and the voltage of an X-pinch were measured. The inductance of the X-pinch was assumed to be a constant and estimated by the calculation of the magnetic field based on the well-known Biot-Savart's Law. The voltage of the inductance was calculated with L · di/dt and subtracted from the measured voltage of the X-pinch. Then, the resistance of the X-pinch was determined and the following results were obtained. At the start of the current flow the resistance of the exploding wires is several tens of Ohms, one order of magnitude, higher than the metallic resistance of the wires at room temperature, and then it falls quickly to about 1 , which reflects the physical processes occurring in the electrically exploding wires, i.e., a current transition from the highly resistive wire core to the highly conductive plasma. It was shown that the inductive contribution to the voltage of the X-pinch is less than the resistive contribution. For the wires we used, the wires' material and diameter have no strong influence on the resistance of the X-pinch, which may be explained by the fact that the current flows through the plasma rather than through the metallic wire itself. As a result, the current is almost equally divided between two parallel X-pinches even though the diameter and material of the wires used for these two X-pinches are significantly different.     

绝缘衬底上硅表面载流子的超快动力学研究

利用800 nm波长的飞秒抽运探测技术测量r具有不同单晶硅薄膜厚度的绝缘衬底上硅(SOI)皮秒瞬态反射率变化,并通过基于受激载流子密度和温度变化过程建立的反射率模型讨论了SOI表面载流子的超快动力学过程.研究表明,表面复合速度(SRV)是影响载流子动力学响应的主要因素,且薄膜厚度越小表面复合速度就越大,对应的表面态密度可达到1013cm-2 .对于较小的SRV,受激载流子的超快响应决定了瞬念反射率变化;而对于较大的SRV,晶格温升对瞬态反射率变化的贞献变得显著,使得反射率在更短的时间内恢复并超过初始值.     

Neutron diffraction study on composite compound Nd2Co7

The crystallographic and the magnetic structures of the composite compound Nd₂Co₇ at 300 K are investigated by a combined refinement of X-ray diffraction data and high-resolution neutron diffraction data. The compound crystallizes into a hexagonal Ce₂Ni₇-type structure and consists of alternately stacking MgZn₂-type NdCo₂ and CaCu₅-type NdCo₅ structural blocks along the c axis. A magnetic structure model with the moments of all atoms aligning along the c axis provides a satisfactory fitting to the neutron diffraction data and coincides with the easy magnetization direction revealed by the X-ray diffraction experiments on magnetically pre-aligned fine particles. The refinement results show that the derived atomic moments of the Co atoms vary in a range of 0.7 μ_B-1.1 μ_B and the atomic moment of Nd in the NdCo₅ slab is close to the theoretical moment of a free trivalent Nd³⁺ ion, whereas the atomic moment of Nd in the NdCo₂ slab is much smaller than the theoretical value for a free Nd³⁺ ion. The remarkable difference in the atomic moment of Nd atoms between different structural slabs at room temperature is explained in terms of the magnetic characteristics of the NdCo₂ and NdCo₅ compounds and the local chemical environments of the Nd atoms in different structural slabs of the Nd₂Co₇ compound.     

激磁电感对直线变压器输出波形顶降的影响

 从理论上分析了激磁电感对直线变压器驱动源输出脉冲波形顶降的影响,使用Pspice软件对理论计算结果进行了模拟验证。理论计算和模拟分析的结果均表明：激磁电感越小,输出脉冲波形的顶降越明显。设计了50 A的偏磁电路并进行了实验,在重复频率为20 Hz时直线变压器驱动源工作稳定,输出脉冲波形前沿约35 ns,平顶约130 ns,幅值约125 kV。与未加偏磁电路的实验结果相比,顶降明显减小（小于5%）,实验结果与理论计算和模拟分析结果基本一致。     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

高分辨1H-NMR研究溶聚丁苯橡胶链化学结构

用高分辨 1H NMR研究了不同溶聚丁苯橡胶链化学结构的特征 ,并对其中的化学组成特别是丁二烯异构体含量进行了定量计算 .揭示了轮胎工业中公认性能优良的拜尔溶聚丁苯橡胶具有较高的cis 1,4丁二烯异构体含量 ,而trans 1,4丁二烯异构体含量较低 ,1,2add丁二烯异构体含量和苯乙烯含量比较适中 ,而且丁二烯异构体具有一定的序列有序性 .正是这些结构因素 ,决定了拜尔溶聚丁苯橡胶能够对绿色轮胎低生热、抗湿滑和耐磨性能起到了最佳平衡作用     

宽绝对禁带的一维磁性光子晶体结构

提出了一种具有宽绝对禁带的一维磁性光子晶体结构,该结构由相同的折射率和物理厚度以及不同的波阻抗的两种磁性材料交替组合而成.通过传输矩阵法分析可得,相比于非磁性光子晶体,该光子晶体的禁带对入射角和偏振都不敏感,从而具有更宽的绝对禁带.合适地调节两种磁性材料的参数,增加两者波阻抗的差值,该光子晶体的绝对禁带宽度也相应地增加;调节两种磁性材料的物理厚度,其绝对禁带中心也会随之调整;最后,将两个满足上述条件的一维磁性光子晶体组成异质结构,其第一禁带宽度与禁带中心之间的比值可达到1.41以上.     

H2S在Fe(100)面吸附的第一性原理研究

基于密度泛函理论第一性原理, 在广义梯度近似下, 研究了表面覆盖度为0.25 ML (monolayer)时硫化氢分子在Fe(100)面吸附的结构和电子性质, 并与单个硫原子吸附结果进行了对比. 结果表明: 硫化氢分子吸附在B2位吸附能最小为-1.23 eV, 最稳定, B1位吸附能最大为-0.01 eV, 最不稳定; 并对硫化氢分子在B1位和B2位吸附后的电子态密度进行了分析, 也表明了吸附在B2位稳定, 且吸附在B2位后硫化氢分子几何结构变化不大; 将硫化氢中硫原子吸附与单个硫原子吸附的电子性质进行了比较, 发现前者吸附作用非常微弱; 同时对吸附后的Fe(100)面进行了对比, 单个硫原子吸附的Fe(100)面电子态密度出现了一系列峰值且离散分布, 生成了硫化亚铁, 表明在硫化氢环境下, 主要是硫化氢析出的硫原子发生了吸附. 关键词： 第一性原理 Fe(100)表面 吸附能 硫化氢     

(1-x)(K0.5Na0.5)NbO3-xSrTiO3陶瓷的弛豫铁电性能

通过对(1-x)(K0.5Na0.5)NbO3-xSrTiO3(0≤x≤0.15)陶瓷的相组成、晶体结构和介电性能的研究发现,该陶瓷为单一的钙钛矿结构相.当x含量较小(x＜0.1)时为正交相结构,x≥0.1时转变为四方相结构.随着SrTiO3掺杂量的增加,样品的致密度增加,样品由正常铁电相逐渐向弥散铁电相转变,且相变温度明显下降,其相变峰的半高宽D和临界指数γ,随 x 的增加而增加.样品损耗ε″r(复介电常数虚部)随温度T的变化表明低温时弛豫极化损耗起主要作用,高温时漏导损耗起主要作用.同时介电常数实部ε′r随频率的变化显示(1-x)(K0.5Na0.5)NbO3-xSrTiO3弛豫为德拜弛豫.     

非故意掺杂GaN薄膜方块电阻与载气中N2比例关系研究

利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N₂比例的关系.研究发现,随着载气中N₂比例的增加,GaN薄膜方块电阻急剧增加.当载气中N₂比例为50%时,GaN薄膜方块电阻达1.1×10⁸Ω/□,且GaN表面平整,均方根粗糙度为0.233nm.二次离子质谱分析发现,载气中N₂比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N₂比 关键词： 半绝缘GaN薄膜 载气 金属有机气相外延 位错