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141.
142.
采用动态粘弹谱仪(DDV)、电子扫描显微镜(SEM)和摩擦试验机等对影响摩阻复合材料制动噪音的因素进行了探讨。结果表明,摩阻材料基体的合理改性以提高其损耗角正切tanδ对减少振动、降低噪音行之有效。同时对传统解决噪音的方法,如添加固体润滑剂、橡胶共混等进行了分析比较。  相似文献   
143.
This paper presents an active patch array designed at 24 GHz. It can be used as a front-end component for a phased array. A series resonant array structure is chosen which is compact and easy excite. With 5 elements, the array proved a 12-dB antenna gain. A power amplifier and a low noise amplifier are designed on a single GaAs chip (PALNA). Bias switch is used in the PALNA, which greatly reduces the switch loss in a transceiver and increases the efficiency. 20-dB small signal gain is achieved in both power amplifier and low noise amplifier. The active patch array is built by the combination of the patch array and PALNA. The measured active gain of this antenna is 35-dB for the PA mode and 31-dB for the LNA mode. This active patch array can obtain an EIRP of 34 dBm with a total radiated power of 22dBm and a maximum PAE of 32%. To check the noise performance, we applied sources at both normal temperature and 77K (liquid nitrogen) and extracted the noise figure (3.5 dB) of the active antenna by the Y factor method. The results proved that the active antenna is working efficiently as both a transmitting and receiving antenna.  相似文献   
144.
(NH_4)_2MoS_4在活性炭上浸渍过程的研究Ⅱ.干燥机理及模型秦慧芳,张成芳,陆岗,俞丰,朱子彬(华东理工大学无机化工研究所,上海200237)237)关键词硫代钼酸铵,活性炭,干燥,钼分布,干燥模型负载型催化剂的活性组分在载体上的分布,受浸渍...  相似文献   
145.
§ 1  IntroductionA triple system of order v and indexλ,denoted by TS(v,λ) ,is a collection of3- ele-mentsubsets Aof a v- set X,so thatevery 2 - subsetof X appears in preciselyλ subsets of A.L etλ≥ 2 and (X,A) be a TS(v,λ) .If Acan be partitioned into t(≥ 2 ) parts A1,A2 ,...,Atsuch that each (X,Ai) is a TS(v,λi) for 1≤ i≤ t,then (X,A) is called de-composable.Otherwise it is indecomposable.If t=λ,λi=1for 1≤ i≤ t,the TS(v,λ) (X,A) is called completely decomposable.It …  相似文献   
146.
The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect.  相似文献   
147.
甲基红染料掺杂的聚乙烯醇薄膜光存储特性的实验研究   总被引:1,自引:0,他引:1  
用2倍频小型YAG激光(532nm)作为写入光和擦除光,用He-Ne激光器623.8nm线作为读出光,用CCD作为探测器,研究了不同写入光功率下,甲基红/聚乙烯醇(MR/PVA)薄膜光栅生长的动力学过程和不同擦除光功率下,光栅擦除的动力学过程.结合光栅生长曲线的波动现象,对光存储机制进行了新的探讨.实验发现,两写入光和读出光的功率配比为1:1:1时,可获得最大衍射效率,提出读出光对写入过程具有双重作用的物理模型,对此实验结果给出了合理的解释.  相似文献   
148.
We apply the theory developed in quantum cosmology to a model of charged generalized Brans–Dicke gravity. This is a quantum model of gravitation interacting with a charged Brans–Dicke type scalar field which is considered in the Pauli frame. The Wheeler–DeWitt equation describing the evolution of the quantum Universe is solved in the semiclassical approximation by applying the WKB approximation. The wave function of the Universe is also obtained by applying both the Vilenkin-like and the Hartle–Hawking-like boundary conditions. We then make predictions from the wave functions and infer that the Vilenkin's boundary condition is more reasonable in the Brans–Dicke gravity models leading a large vacuum energy density at the beginning of the inflation.  相似文献   
149.
150.
Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.  相似文献   
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