Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

Weak and Strong Solutions for the Stokes Approximation of Non-homogeneous Incompressible Navier-Stokes Equations

In this paper,the Dirichlet problem of Stokes approximate of non-homogeneous incompressibleNavier-Stokes equations is studied.It is shown that there exist global weak solutions as well as global andunique strong solution for this problem,under the assumption that initial density ρ_0(x)is bounded away from0 and other appropriate assumptions(see Theorem 1 and Theorem 2).The semi-Galerkin method is applied toconstruct the approximate solutions and a prior estimates are made to elaborate upon the compactness of theapproximate solutions.     

神光装置放大自发辐射输出特性测量

讨论了大型激光装置放大自发辐射输出的一般特性，给出了神光装置放大自发辐射特性的测量结果。     

Chen’ s theorem in arithmetical progressions

LetN be a sufficiently large even integer and

顶空气相色谱法测定延生护宝液中甲醇残留量

本文用顶空气相色谱法，以ＧＤＸ－１０１为固定相，测定了延生护宝液中甲醇残留量，方法的回收率在８５．９％－１０１．６％之间，变异系数０．３％，最小检出量１．０ｍｇ／Ｌ。     

REDUCTION OF C=C DOUBLE BOND WITH BOROHYDRIDE EXCHANGE RESIN-TRANSITION METAL COMPOUND SYSTEMS

Borohydride exchange resin-transition metal(Co,Ni,Cu,)compoundsystems reduced C=C double to C-C single bond in ethanol.     

多孔硅的电化学制备

单晶硅在氢氟酸溶液中阳极氧化可制得多孔硅, 多孔硅是一种以新形态存在的硅, 与单晶硅相比, 它表现出独特的物理性质和化学活性。荧光光谱峰的蓝移表明, 在p-型低掺杂衬底硅上形成的多孔硅中存在量子尺寸效应, 新近获得的Raman光谱也证实了这一点。