用于高数值孔径物镜的可调光瞳滤波器

根据矢量衍射理论，提出了一种用于提高高数值孔径显微物镜纵向分辨率的可调二元环形光瞳滤波器，通过改变滤波器的环半径获得不同的纵向分辨率，并利用共焦显微术点扩散函数的乘积性大大地降低了旁瓣相对主瓣的比值。模拟结果表明，这种新型滤波器不仅可以提高高数值孔径物镜的纵向分辨率，同时基本上不影响横向分辨率。     

InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5–14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3 × 10⁸ cm Hz^1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.     

光学系统光阑应用的实例

介绍了一种光学组合系统，通过构造光学系统虚拟的视场光阑实现人眼屈光度测量，它是光学系统光阑应用的生动实例.     

均匀分层介质中标准矢量波函数的构成

研究了在均匀分层介质中构成标准矢量波函数的必要条件。研究结果表明在均匀分层介质中构成标准矢量波函数一般需遵循Morse-Feshbach判据外，领示矢量只能选取与折射率变化方向一致的那根坐标轴单位矢量。但在某些特定的条件下，对领示矢量的选取条件可以放宽为只需遵循Morse-Feshbach判据即可。     

III-Nitride Quantum Devices—Microphotonics

Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm² unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated.     

Influence of mass moment of inertia on the normal modes of a preloaded solar array mast

Earth-orbiting spacecraft often contain solar arrays or antennas supported by a preloaded mast. Due to weight and cost considerations, the supporting structures of the spacecraft appendages are made extremely light and flexible. Therefore, it is essential to investigate the influence of all physical and structural parameters on the dynamic behavior of the overall structure. The governing equation of motion and its general solution for the preloaded mast are developed. Furthermore, the mass moment of inertia of the mast subjected to bending vibrations is included in the governing equation of motion to investigate its influence on determining the circular frequencies. To verify the developed formulations, a finite element technique was implemented. The accuracy and limitation of the technique on calculating the circular frequencies are discussed. Although the study described in this paper primarily focuses on the mast for the space station solar arrays, the developed formulations and techniques can be applied to any large and flexible beam in zero gravity.     

胶束薄层色谱法测定食品及药用胶囊中的合成食用色素

在聚酰胶片上以13%SDBS(十二烷基苯磺酸钠)+7%Triton X-100〔聚乙二醇-对-(1.1,3,3-四甲基)丁基苯基醚〕+(2+3)氨水(1+5+1)为展开剂,用胶束薄层色谱法分离和测定了柠檬黄、亮蓝、苋菜红、胭脂红和赤藓红。测定波长分别为440、632、535、525和528 nm,线性范围分别为0.1～2、0.05～1、0.05～1、0.05～1和0.05～1μg/斑点。方法用于测定软饮料糖果及药用胶囊中的合成色素,获得了满意的结果。此外,还对展开剂的最佳组成进行了单纯形法优化。     

红外折/衍混合离轴望远系统设计

本文针对空间光学系统轻型特点,设计了一个二元光学折/衍混合红外反射式望远系统。采用了离轴式格里高利(Gregorian)结构形式,消除了望远系统中的中心遮拦问题。用衍射光学元件校正系统象差,使反射面为球面,二元光学表面尺寸比施密特(Schmidt)校正板(位于入瞳处)缩小于3～4倍,光学设计运用OSLO软件,光学系统的通光孔径φ=120mm,焦距f=-1000mm,波长λ=4.3μm,视场2ω=2°×6°(子午×弧矢),分辨率Res=0.05mm,MTF≥0.4(空间频率fre≤10cl/mm).