单粒子势模型下价核子的密度分布

依据实验事实，利用单粒子势模型，计算了一些核态外层价核子的密度分布.计算给出了价核子在核外部分布的概率和贡献，以此作为晕核态的判断标准.通过研究均方根半径随结合能变化的规律，指出了晕核态存在的条件，尤其是质子晕核态存在的条件.这些对判断和寻找晕核态有现实的指导意义. 关键词： 单粒子势模型 价核子 密度分布 中子晕核态 质子晕核态     

Interface Optical Phonon Modes and Frohlich Electron-Phonon Interaction Hamiltonian in a Multi-shell Spherical Nanoheterosystem

Under dielectric continuum approximation, interface optical (IO) phonon modes and the Frohlich electron-IO phonon interaction Hamiltonian in a multi-shell spherical nanoheterosystem were derived and studied. Numericalcalculations on three-layer and four-layer CdS/HgS spherical nanoheterosystems have been performed. Results revealthat there are four IO phonon modes for the three-layer system and six IO phonon modes for the four-layer system.On each interface, there are two IO phonon modes, the frequency of one is between WTO,CdS and WLO,CdS, and that ofthe other is between WTO,HgS and WLO,HgS. With the increasing of quantum number l, the frequency of each IO modeapproaches one of the two frequency values of the single CdS/HgS heterostructure, and the potential for each IO modeis more and more localized at a certain interface, furthermore, the coupling between the electron-lO phonons becomes weaker.     

ICP-AES测定钛基复合材料中镍、钕和铁的研究

采用ICP－AES法对钛基复合材料中的合金元素镍、钕、铁的测定进行了研究，着重进行了基体元素及待测元素镍、钕、铁之间干扰试验及各元素在测定浓度范围内的线性相关性试验，进行了酸度试验，测定了钛基复合材料中3种元素的含量，得到了较好的精密度和准确度。方法简便、可靠，获得满意的分析结果。     

藻类植物中钙、镁、铁、锰、铜和锌含量分析

本文采用火焰原子吸收光谱法测定了七种藻类植物中钙 ,镁 ,铁 ,锰 ,铜 ,锌六种元素的含量。结果表明 ,藻类植物中含有较丰富的钙 ,镁 ,铁 ,锰 ,锌元素 ,其含量由大到小顺序为Ca >Mg >Fe >Zn >Mn >Cu ,尤以钙的含量最为丰富 ,铜含量较少。本实验结果为探讨藻类植物作为资源开发利用提供了有用数据。     

高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜

在超高真空分子束外延（MBE）生长技术中，反射式高能电子衍射仪（RHEED）能实时显示半导体和金属外延生长过程，给出薄膜表面结构和平整度的信息，成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导（YBa₂Cu₃O₇） 、铁电薄膜（Sr_1-xBa_x TiO₃）及它们的同质和异质外延结构的生长机理，获得高质量的符合各种应用 需要的氧化 物多层薄膜结构，在常规的制备氧化 关键词： 高温超导薄膜 RHEED     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

Liminf results on the increments of an (N,d)-Gaussian process

We establish some liminf theorems on the increments of a (N,d)-Gaussian process with the usual Euclidean norm, via estimating upper bounds of large deviation probabilities on the suprema of the (N,d)-Gaussian process. This revised version was published online in June 2006 with corrections to the Cover Date.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

电子储存环中插入元件的非线性束流动力学的Lie代数方法

介绍了用能保证哈密顿系统“辛”性质的Lie映射方法来研究电子储存环中的插入元件对束流动力学的影响.并以此方法对合肥光源中将要安装的波荡器UD?–?1对储存环的影响作了初步的研究     

高压沿面放电烟气脱硫技术动态实验研究

本文针对高压沿面放电活化气体的烟气脱硫技术,在静态实验研究的基础上进行了实验室冷态动态的实验研究。设计了便于反应和测量的动态实验装置。实验解释了电子束法脱硫技术中导致氨气泄漏的部分原因,验证了高压沿面放电脱硫技术可以在较低的运行电压下,达到提高脱硫效率,减少氨气泄漏的作用。