熔盐辅助碳热还原氮化法制备氮化钽晶须

本文以五氧化二钽、活性炭为主要原料,氟化钾为熔盐介质,通过碳热还原氮化法在氨气气氛下成功制备了氮化钽(Ta5N6)晶须.运用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)对合成产物的组成、结构和形貌进行了表征.研究了升温方式、氮化气氛、氮化时间和催化剂含量对产物形成的影响.当Ni与Ta2O5的摩尔比为0.1、氮化气氛为氨气(流量为300 mL/min)、氮化时间为6h时制备的晶须形貌最佳,晶须直径80～250 nm,长为1～5μm,晶须的生长机制为气-液-固(VLS)和气-固(VS)两种机理的混合机制.     

Zn离子注入LiNbO_3晶体的制备及其红外谱特性研究

利用离子注入技术制备了不同Zn离子剂量掺杂的铌酸锂样品,研究了Zn离子注入对Li Nb O3晶体红外光谱特性的影响。实验结果显示Zn离子已成功地注入到Li Nb O3晶体中,以Zn原子纳米颗粒形式存在,且注入深度约为80 nm。与纯Li Nb O3晶体在3486、2851和2917 cm-1处的主次吸收峰的位置相比,三种掺杂Zn离子剂量的样品主吸收峰的位置均出现在3483 cm-1处,发生了微小的红移,次吸收峰的位置基本保持不变。Zn离子注入使x-切向Li Nb O3晶体的透射率增大,z-切向Li Nb O3晶体的透射率降低。     

Effects of poly-(p-phenylene terephthamide) powder coated with polydopamine on ethylene-propylene-diene-terpolymer grafted maleic anhydride

In this paper, we reported a technique for the surface modification of poly-(p-phenylene terephthamide) (PPTA) powder coated with polydopamine (PDOPA). We used air oxidation to self-polymerize dopamine (DOPA) to ensure that the PPTA powder was coated. Our results indicate that the modified surface of PPTA powder enhances compatibility with the polymer matrix without damaging its structure. Additionally, it is possible to control the coating thickness of PDOPA by regulating the reaction time. The modified PPTA powder improved the comprehensive property of ethylene-propylene-diene-terpolymer grafted maleic anhydride (EPDM-g-MAH), and it proved that this method can enhance the strength and electric insulativity of EPDM-g-MAH.     

变换催化剂研究进展

烃类化合物的水蒸汽重整与水煤气变换反应(简称变换反应)组合是廉价制取氢气的主要方式.经过80多年的研究和实践,工业化的变换催化剂已基本定型.近年来由于燃料电池技术的飞速发展,有关变换催化剂的研究与开发又重新引起人们的兴趣与关注.本文在总结传统变换催化剂研究进展情况的基础上,重点介绍了以燃料电池应用为目的变换催化剂的研究进展.总结表明,"(贵)金属/载体" 型双功能催化剂已经成为变换催化剂的主要研究方向.(贵)金属和载体种类、制备方法和条件等对催化剂粒径分布、体相织构、表面性质和活性等都有很大影响.虽然与传统变换催化剂相比,"(贵)金属/载体" 型双功能变换催化剂体现了更优良的性能,但与燃料电池商业化应用的要求还有一定的差距.     

Structural,surface, and electrical properties of nitrogen ion implanted ZnTe epilayers

P-type ZnTe epilayers grown on GaAs (001) by molecular beam epitaxy have been achieved by N ions implantation, and reached a doping level of more than 1  \(\times \)  10 \(^{18}\) cm \(^{-3}\) . X-ray diffraction spectra suggest that increasing the post-implantation annealing temperature can promote the N ions occupying substitutional sites and help to remove the radiation damage.The hole concentration rises with annealing temperature, while the lowest resistivity and the highest mobility can be obtained by annealing at 450  \(^{\circ }\) C for 5 min. Annealing for 1 min cannot obtain low resistivity. Fabricating ZnTe films with a lower VI/II beam equivalent pressure ratio results in an enhancement in hole concentration and a drop of mobility.In addition, p-ZnTe/n-GaAs and p-ZnTe/n-ZnSe/n-GaAs junctions show better rectifying behaviour after ion implantation.     

Simultaneous confidence bands for nonparametric regression with missing covariate data

We consider a weighted local linear estimator based on the inverse selection probability for nonparametric regression with missing covariates at random. The asymptotic distribution of the maximal deviation between the estimator and the true regression function is derived and an asymptotically accurate simultaneous confidence band is constructed. The estimator for the regression function is shown to be oracally efficient in the sense that it is uniformly indistinguishable from that when the selection probabilities are known. Finite sample performance is examined via simulation studies which support our asymptotic theory. The proposed method is demonstrated via an analysis of a data set from the Canada 2010/2011 Youth Student Survey.

     

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

This paper discusses the resistive switching devices based on highly compatible silicon-rich-oxide, including silicon monoxide (SiO) and SiO _x N _y material, which can be fabricated by low temperature process, and thus fully compatible with the back-end CMOS technology. The demonstrated SiO based RRAM suitable for 3D stackable applications shows repeatable unipolar resistive switching behavior with excellent on/off resistance ratio and good retention performance, but a little bit high switching voltage. The presented silicon-rich silicon-oxynitride RRAM device can effectively reduce the switching voltages (∼1 V) and shows good retention capability under 180°C baking as well as fast speed, giving great potentials for 3D stackable and embedded applications. The switching mechanisms in the studied devices are discussed. The method of switching voltage reduction through nitrogen doping, as a kind of defect engineering, can provide some guidelines for RRAM design.