Transition from decelerated to accelerated cosmic expansion in braneworld universes

Braneworld theory provides a natural setting to treat, at a classical level, the cosmological effects of vacuum energy. Non-static extra dimensions can generally lead to a variable vacuum energy, which in turn may explain the present accelerated cosmic expansion. We concentrate our attention in models where the vacuum energy decreases as an inverse power law of the scale factor. These models agree with the observed accelerating universe, while fitting simultaneously the observational data for the density and deceleration parameter. The redshift at which the vacuum energy can start to dominate depends on the mass density of ordinary matter. For _m = 0.3, the transition from decelerated to accelerated cosmic expansion occurs at z _T ≈ 0.48 ± 0.20, which is compatible with SNe data. We set a lower bound on the deceleration parameter today, namely > − 1 + 3 _m /2, i.e., > − 0.55 for _m = 0.3. The future evolution of the universe crucially depends on the time when vacuum starts to dominate over ordinary matter. If it dominates only recently, at an epoch z < 0.64, then the universe is accelerating today and will continue that way forever. If vacuum dominates earlier, at z > 0.64, then the deceleration comes back and the universe recollapses at some point in the distant future. In the first case, quintessence and Cardassian expansion can be formally interpreted as the low energy limit of our model, although they are entirely different in philosophy. In the second case there is no correspondence between these models and ours.     

The chemisorption of pentacene on Si(0 0 1)-2 × 1

Adsorption structures of the pentacene (C₂₂H₁₄) molecule on the clean Si(0 0 1)-2 × 1 surface were investigated by scanning tunneling microscopy (STM) in conjunction with density functional theory calculations and STM image simulations. The pentacene molecules were found to adsorb on four major sites and four minor sites. The adsorption structures of the pentacene molecules at the four major sites were determined by comparison between the experimental and the simulated STM images. Three out of the four theoretically identified adsorption structures are different from the previously proposed adsorption structures. They involve six to eight Si-C covalent chemical bonds. The adsorption energies of the major four structures are calculated to be in the range 67-128 kcal/mol. It was also found that the pentacene molecule hardly hopped on the surface when applying pulse bias voltages on the molecule, but was mostly decomposed.     

Characterization of heat-assisted magnetic probe recording on CoNi/Pt multilayers

A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments.     

Probing Ag nanoparticle surface oxidation in contact with (in)organics: an X‐ray scattering and fluorescence yield approach

Characterizing interfacial reactions is a crucial part of understanding the behavior of nanoparticles in nature and for unlocking their functional potential. Here, an advanced nanostructure characterization approach to study the corrosion processes of silver nanoparticles (Ag‐Nps), currently the most highly produced nanoparticle for nanotechnology, is presented. Corrosion of Ag‐Nps under aqueous conditions, in particular in the presence of organic matter and halide species common to many natural environments, is of particular importance because the release of toxic Ag⁺ from oxidation/dissolution of Ag‐Nps may strongly impact ecosystems. In this context, Ag‐Nps capped with polyvinolpyrrolidone (PVP) in contact with a simple proxy of organic matter in natural waters [polyacrylic acid (PAA) and Cl^? in solution] has been investigated. A combination of synchrotron‐based X‐ray standing‐wave fluorescence yield‐ and X‐ray diffraction‐based experiments on a sample consisting of an approximately single‐particle layer of Ag‐Nps deposited on a silicon substrate and coated by a thin film of PAA containing Cl revealed the formation of a stable AgCl corrosion product despite the presence of potential surface stabilizers (PVP and PAA). Diffusion and precipitation processes at the Ag‐Nps–PAA interface were characterized with a high spatial resolution using this new approach.     

Mechanisms of Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation

For the last decade, a variant of pulsed laser ablation, Resonant-Infrared Matrix-Assisted Pulsed Laser Evaporation (RIR-MAPLE), has been studied as a deposition technique for organic and polymeric materials. RIR-MAPLE minimizes photochemical damage from direct interaction with the intense laser beam by encapsulating the polymer in a high infrared-absorption solvent matrix. This review critically examines the thermally-induced ablation mechanisms resulting from irradiation of cryogenic solvent matrices by a tunable free electron laser (FEL). A semi-empirical model is used to calculate temperatures as a function of time in the focal volume and determine heating rates for different resonant modes in two model solvents, based on the thermodynamics and kinetics of the phase transitions induced in the solvent matrices. Three principal ablation mechanisms are discussed, namely normal vaporization at the surface, normal boiling, and phase explosion. Normal vaporization is a highly inefficient polymer deposition mechanism as it relies on collective collisions with evaporating solvent molecules. Diffusion length calculations for heterogeneously nucleated vapor bubbles show that normal boiling is kinetically limited. During high-power pulsed-FEL irradiation, phase explosion is shown to be the most significant contribution to polymer deposition in RIR-MAPLE. Phase explosion occurs when the target is rapidly heated (10⁸ to 10¹⁰ K/s) and the solvent matrix approaches its critical temperature. Spontaneous density stratification (spinodal decay) within the condensed metastable phase leads to rapid homogeneous nucleation of vapor bubbles. As these vapor bubbles interconnect, large pressures build up within the condensed phase, leading to target explosions and recoil-induced ejections of polymer to a near substrate. Phase explosion is a temperature (fluence) threshold-limited process, while surface evaporation can occur even at very low fluences.     

Analysis of excimer laser annealing of amorphous SiGe on La2O3//Si structures

The reduction of complementary metal oxide semiconductor dimensions through transistor scaling is in part limited by the SiO₂ dielectric layer thickness. Among the materials evaluated as alternative gate dielectrics one of the leading candidate is La₂O₃ due to its high permittivity and thermodynamic stability. However, during device processing, thermal annealing can promote deleterious interactions between the silicon substrate and the high-k dielectric degrading the desired oxide insulating properties.The possibility to grow poly-SiGe on top of La₂O₃//Si by laser assisted techniques therefore seems to be very attractive. Low thermal budget techniques such as pulsed laser deposition and crystallization can be a good choice to reduce possible interface modifications due to their localized and limited thermal effect.In this work the laser annealing by ArF excimer laser irradiation of amorphous SiGe grown on La₂O₃//Si has been analysed theoretically by a numerical model based on the heat conduction differential equation with the aim to control possible modifications at the La₂O₃//Si interface. Simulations have been carried out using different laser energy densities (0.26-0.58 J/cm²), different La₂O₃ film thickness (5-20 nm) and a 50 nm, 30 nm thick amorphous SiGe layer. The temperature distributions have been studied in both the two films and substrate, the melting depth and interfaces temperature have been evaluated. The fluences ranges for which the interfaces start to melt have been calculated for the different configurations.Thermal profiles and interfaces melting point have shown to be sensitive to the thickness of the La₂O₃ film, the thicker the film the lower the temperature at Si interface.Good agreement between theoretical and preliminary experimental data has been found.According to our results the oxide degradation is not expected during the laser crystallization of amorphous Si_0.7Ge_0.3 for the examined ranges of film thickness and fluences.     

Tens of GHz Tantalum pentoxide‐based micro‐ring all‐optical modulator for Si photonics

A tantalum pentoxide‐based (Ta₂O₅‐based) micro‐ring all‐optical modulator was fabricated. The refractive index inside the micro‐ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all‐optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta₂O₅ resonator was red‐shifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta₂O₅ directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta₂O₅ at 1.55 μm was estimated as 3.4 × 10^?14 cm²/W based on the Kerr effect, which is almost an order of magnitude higher than that of Si₃N₄. All results indicate that Ta₂O₅ has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz.