Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

Deconvolution of very low primary energy SIMS depth profiles

In this paper, the deconvolution of SIMS profiles analysed at very low primary energy (0.5 keV/O₂⁺) is addressed. The depth resolution function (DRF) of the SIMS analysis in presence of roughness is established and a deconvolution procedure is implemented without or in presence of roughness on samples containing delta-doped layers of boron in silicon. It is shown that the deconvolution procedure can lead to a great improvement of the full width at half maximum (FWHM) of the measured peaks in the case where no roughness in detected in the crater bottom. In the case where it is present, the conditions required to use a deconvolution procedure are discussed, and the deconvolution is implemented using precise and restrictive assumptions.     

On Critical Stability of Three Quantum Charges Interacting Through Delta Potentials

We consider three one-dimensional quantum, charged and spinless particles interacting through delta potentials. We derive sufficient conditions which guarantee the existence of at least one bound state.     

A Verified Optimization Technique to Locate Chaotic Regions of Hénon Systems

We present a new verified optimization method to find regions for Hénon systems where the conditions of chaotic behaviour hold. The present paper provides a methodology to verify chaos for certain mappings and regions. We discuss first how to check the set theoretical conditions of a respective theorem in a reliable way by computer programs. Then we introduce optimization problems that provide a model to locate chaotic regions. We prove the correctness of the underlying checking algorithms and the optimization model. We have verified an earlier published chaotic region, and we also give new chaotic places located by the new technique.     

Magnetic anisotropy and anisotropic ballistic conductance of thin magnetic wires

The magnetocrystalline anisotropy of thin magnetic wires of iron and cobalt is quite different from the bulk phases. The spin moment of monatomic Fe wire may be as high as 3.4 μ_B, while the orbital moment as high as 0.5 μ_B. The magnetocrystalline anisotropy energy (MAE) was calculated for wires up to 0.6 nm in diameter starting from monatomic wire and adding consecutive shells for thicker wires. I observe that Fe wires exhibit the change sign with the stress applied along the wire. It means that easy axis may change from the direction along the wire to perpendicular to the wire. We find that ballistic conductance of the wire depends on the direction of the applied magnetic field, i.e. shows anisotropic ballistic magnetoresistance. This effect occurs due to the symmetry dependence of the splitting of degenerate bands in the applied field which changes the number of bands crossing the Fermi level. We find that the ballistic conductance changes with applied stress. Even for thicker wires the ballistic conductance changes by factor 2 on moderate tensile stain in our 5×4 model wire. Thus, the ballistic conductance of magnetic wires changes in the applied field due to the magnetostriction. This effect can be observed as large anisotropic BMR in the experiment.     

Optimal vaccine scheduling in cancer immunotherapy

Cancer immunotherapy aims at stimulating the immune system to react against cancer stealth capabilities. It consists of repeatedly injecting small doses of a tumor-associated molecule one wants the immune system to recognize, until a consistent immune response directed against the tumor cells is observed.

We have applied the theory of optimal control to the problem of finding the optimal schedule of injections of an immunotherapeutic agent against cancer. The method employed works for a general ODE system and can be applied to find the optimal protocol in a variety of clinical problems where the kinetics of the drug or treatment and its influence on the normal physiologic functions have been described by a mathematical model.

We show that the choice of the cost function has dramatic effects on the kind of solution the optimization algorithm is able to find. This provides evidence that a careful ODE model and optimization schema must be designed by mathematicians and clinicians using their proper different perspectives.     

Asymptotic integration of a problem of convection

Rostov-on-Don. Translated from Sibirskii Matematicheskii Zhurnal, Vol. 30, No. 4, pp. 69–75, July–August, 1989.     

New methods for determining the volumetric flow rate in the column and the retention time of the unretained substance in gas chromatography

New methods for calculating the mean volumetric flow rate of the carrier gas and the retention time of the unretained substance in the column under conditions of gas chromatography were proposed. The methods are based on preliminary isothermal calibrations of the flow rate and holdup time for a packed column. A theoretical substantiation of the methods was given. Procedures of plotting calibration dependences for determining the indicated quantities at a desired temperature were described. The calculation results were compared to experimental data obtained by traditional methods. It was demonstrated that the use of calculation methods substantially simplifies the determination of the specific retention volume over a wide temperature range.