核裂变材料核素成份的γ特征谱分析

研究对裂变核材料及有关核装置进行了无损探测与识别的物理可行性。其要点是由测量得到的γ特征能谱出发，通过对γ射线输运过程的物理分析并引入相应的参量描述，以推 论有关核材料的特征信息。数值计算模拟实验的结果表明，据此方法可以在有效的精度范围内由所测量到的裂变核材料的出射γ特征谱推算出其同位素成份等重要信息。研究结果还表明，考虑源区核材料的自吸收修正（称几何自屏蔽修正）是提高计算分析精度的关键因素之一。     

ADDENDUM

Abstract

Experiments have been performed to provide basic heat transfer data for thermal convection in a horizontal concentric annulus partially filled with water. A real-time holographic interferometry was employed to map the temperature distribution and a laser shadowgraph system was used to measure local heat transfer coefficients along the heated inner cylinder. Experimental results demonstrate that a minimum average Nusselt number for the water-wetted portion of the inner cylinder occurs at the air-water interface situated flush with the top of the inner cylinder. Corresponding numerical simulations were conducted for the cases of either fully or half-filled with water and the predictions agree well with the experimental results.     

Characterization of BMO in terms of rearrangement-invariant Banach function spaces

The atomic decomposition of Hardy spaces by atoms defined by rearrangement-invariant Banach function spaces is proved in this paper. Using this decomposition, we obtain the characterizations of BMO and Lipschitz spaces by rearrangement-invariant Banach function spaces. We also provide the sharp function characterization of the rearrangement-invariant Banach function spaces.     

Doob's inequality,Burkholder-Gundy inequality and martingale transforms on martingale Morrey spaces

We introduce the martingale Morrey spaces built on Banach function spaces. We establish the Doob's inequality, the Burkholder-Gundy inequality and the boundedness of martingale transforms for our martingale Morrey spaces. We also introduce the martingale block spaces. By the Doob's inequality on martingale block spaces, we obtain the Davis' decompositions for martingale Morrey spaces.     

Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer

This work presents the optimal design of a silicon-on-insulator （SOI） diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer （LDBL） between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm.The LDBL shielding layer improved the breakdown voltage.     

R1-xPrxBa2Cu3O7-δ超导Tc平台的离子尺寸效应

系统地研究了Ｒ_1-xＰｒ_xＢａ₂Ｃｕ₃Ｏ_7-δ的超导Ｔ_c与Ｐｒ替代浓度ｘ的关系。发现在离子半径ｒ_i≤ｒ_i（Ｄｙ）时，在低Ｐｒ浓度范围内存在一个超导Ｔ_c平台，并且平台宽度表明一个Ｒ^３＋离子尺寸效应。我们认为，Ｔ_c平台宽度的离子尺寸效应可能起源于Ｐｒ４ｆ电子局域态的改变。提出一个临界Ｒ^３＋离子半径ｒ_ic，ｒ_i＞ｒ_ic时ＲＢａ₂Ｃｕ₃Ｏ_7-δ的超导电性消失 关键词：     

周期场聚焦电子束

引言 自从发现“强聚焦效应”可以应用在粒子加速器内以后,人们知道利用周期磁场能把离子束控制得更细,于是可以减少磁铁的需要量。因此近年来为了改建或新设计各种类型粒子加速器,对周期场聚焦离子束或电子束方面曾进行了很多研究工作。另一方面人们也开始研究用周期电场和磁场聚焦各种电子管内的电子束,例如行波管内电子束的聚焦等。聚焦电子束的主要特点在於必要考虑空间电荷。     

铝单晶体滑移的电子显微镜颧察(二)

金屠的纯度和试样表面的处理等因素能影响品体滑移的形熊.     

Optimal Control of the Laplace Equation with Cauchy Data as Control Variables

In this not, we give necessary and sufficient conditions foroptimality of an ill-posed control system governed by the Laplaceequation with Cauchy data as control variables. A duality resultis also presented. This solves an open problem raised by J.L. Lions.     

A New Mechanism for Low Energy Pion Induced Double Charge Exchange Reaction

Using a method developed in theory of double beta decay[1], we propose a new mechanism, namely the two-nucleon pion absorption-emission mechanism for pion double charge exchange reaction at low energies. The calculations are compared with the experimental data of the angular distribution at 50 MeV and the 0° excitation functions of the DCX reactions on ¹⁴C, ¹⁸O with energies < 130 MeV. It is found that the contribution of this new mechanism is very important at low energies.